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PD -20353D
SCHOTTKY RECTIFIER
HIGH EFFICIENCY SERIES
22GQ100
30A, 100V
Major Ratings and Characteristics Characteristics IIF(AV) Rectangular waveform VRRM IFSM @ tp = 8.3ms half-sine VF @ 30Apk, TJ =125C 22GQ100 30 100 400 0.90 Units A V A V C
Description/Features The 22GQ100 Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated TO-254AA package. The device's forward voltage drop and reverse leakage current are optimized for the lowest power loss and the highest circuit efficiency for typical high frequency switching power supplies and resonent power converters. Full MIL-PRF-19500 quality conformance testing is available on source controlled drawings to TX, TXV and S levels. * Hermetically Sealed * High Frequency Operation * Guard Ring for Enhanced Ruggedness and Long Term Reliability * Schottky Diodes Connected in Series * Electrically Isolated
TJ, Tstg Operating and storage -55 to 150
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040]
CASE STYLE
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
(ISOLATED BASE)
NOTES : 1. 2. 3. 4. DIMENS IONING & T OLE RANCING PER AS ME Y14.5M-1994. AL L DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. CONT ROL LING DIMENS ION: INCH. CONF ORMS TO JEDE C OUTLINE T O-254AA.
1
CATHODE
2
3
ANODE
IR Case Style TO-254AA
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1
02/22/02
22GQ100
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V) VRWM Max. Working Peak Reverse Voltage (V)
22GQ100 100
Absolute Maximum Ratings
Parameters
IF(AV) Max. Average Forward Current See Fig. 5 IFSM Max. Peak One Cycle Non - Repetitive Surge Current 400 A @ tp = 8.3 ms half-sine
Limits
30
Units
A
Conditions
50% duty cycle @ TC = 100C, rectangular waveform
Electrical Specifications
Parameters
V FM Max. Forward Voltage Drop See Fig. 1Q
Limits
1.1 1.6 0.9 1.3
Units
V V V V mA mA pF nH @ 20A @ 35A @ 20A @ 35A TJ = 25C TJ = 125C
Conditions
TJ = 25C TJ =1 25C VR = rated VR
I RM CT LS
Max. Reverse Leakage Current See Fig. 2 Q Max. Junction Capacitance Typical Series Inductance
0.8 45 1400 7.8
VR = 5VDC ( 1MHz, 25C ) Measured from anode lead to cathode lead 6mm ( 0.025 in.) from package
Thermal-Mechanical Specifications
Parameters
TJ Tstg Max.Junction Temperature Range Max. Storage Temperature Range to Case wt Weight (Typical) Die Size Case Style 9.3 200X200 TO-254AA g mils
Limits Units
-55 to 150 -55 to 150 1.0 C C C/W DC operation
Conditions
RthJC Max. Thermal Resistance, Junction
See Fig. 4
Q Pulse Width < 300s, Duty Cycle < 2%
2
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22GQ100
100
T = 1 50C J 125C 100C
10
1
0.1
0.01
25C
0.001 A 0 20 40 60
R
0.0001 80 100
R ev e rse V o lta g e - V
(V )
Fig. 2 - Typical Values of Reverse Current Vs. Reverse Voltage
Fig. 1 - Max. Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage
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3
22GQ100
Fig. 4 - Max. Thermal Impedance Z thJC Characteristics
22GQ100
RthJC (DC) = 1.0C/W
Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/02
4
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