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| Silicon Bipolar Low Noise Microwave Transistors Features * High Gain (19dB Typical @ 450 MHz) * Low Noise Figure At Low Ic * Gold Metalization * Useful To 700 MHz * Can be Screened to JANTX, JANTXV Equivalent Levels * Excellent Reliability 2N2857 Case Style TO-72 CAN (509) Description Designed especially for low cost, high reliability type applications, this NPN Silicon Planar Transistor offers low noise, high gain performance, which meets or exceeds all JAN specifications. These devices can be fully tested and screened in accordance with MIL-MRF19500 procedures. A 1.8 GHz current gain-bandwidth product (f T) is typical for this device. The transistors are rugged and employ gold metalization for an unprecedented reliability. Applications IF, VHF, UHF, TV and RF amplifiers. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 1 Tel (408) 432-1480 Fax (408)) 432-3440 Bipolar Low Noise Transistors Absolute Maximum Ratings 2N2857 Series Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Operating Temperature Storage Temperature Chip or Ceramic Packages Plastic Packages Total Power Dissipation at 25C 509 Case Style 450 mW VCBO VCEO VEBO IC Tj 30 V 15 V 1.5 V 50 mA 200C -65C to +200C -65C to +125C 2N2857 Electrical Specifications @ 25C 2N2857 Series Parameter of Test Gain Bandwidth Product Small Signal Power Gain Condition VCE = 10 volts IC = 8 mA VCE = 6 volts IC = 1.5 mA f = 450 MHz VCE = 6 volts IC = 1.5 mA f = 450 GHz VCE = 6 volts IC = 5 mA f = 100 MHz VCE = 6 volts IC = 2 mA f = 1 KHz VCE = 6 volts Symbol fT GPE Units GHz dB 12.5 - 21.0 NF dB 4.5 Max. |hfe| 10 - 19 hfe 50 - 220 CCB pf 1.0 Max. 2N2857 509 pkg 1.8 typ Noise Figure 50 Ohms Magnitude of small Signal short-circuit Transfer ratio Low frequency small Signal current transfer ratio Collector to base Feedback capacitance Collector base time constant VCE = 6 volts IC = 2 mA f = 1 KHz rb' Cc psec 4 - 15 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 2 Tel (408) 432-1480 Fax (408)) 432-3440 Bipolar Low Noise Transistors Electrical Specifications @ 25C Parameter Collector Cut-off Current Collector-Emitter breakdown Voltage Collector-Base breakdown Voltage Emitter-Base breakdown Voltage Forward Current Gain Collector-Base Junction Capacitance Base-Emitter Voltage Saturated Collector-Emitter Voltage Saturated Condition VCB = 15 volts IE = 0 A IC = 30 mA IC = 1 uA IC = 1 uA VCE = 1 volts IC = 3 mA VCB = 10 volts f = 1 MHz IC = 10 mA IB = 1 mA IC = 10 mA IB = 1 mA Symbol ICBO BVCEO BVCBO BVEBO hFE CCB Min 15 30 3 30 Typical 25 47 5.5 100 .6 150 1.0 Max 10 ---- 2N2857 Units nA Volts Volts Volts pF (509) VBESAT VCESAT ------- .8 .2 1.0 .4 Volts Volts Typical Scattering Parameters in the TO-72 Can Package FREQUENCY (MHz) 100 COLLECTOR CURRENT (mA) 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 1.0 1.5 3.0 5.0 INPUT REFLECTION COEFFICIENT MAG ANGLE .91 -26 .88 -39 .75 -48 .67 -53 .82 -43 .77 -48 .61 -65 .49 -77 .69 -64 .63 -70 .45 -89 .37 -100 .62 -76 .56 -81 .39 -100 .32 -111 .56 -80 .55 -86 .39 -104 .32 -117 .54 -87 .49 -93 .34 -112 .29 -123 .46 -102 .41 -108 .30 -126 .26 -138 .44 -111 .38 -117 .29 -135 .25 -145 FORWARD TRANSMISSION COEFFICIENT MAG ANGLE 3.2 152 3.9 149 6.5 136 8.2 128 3.0 138 3.6 135 5.4 122 6.4 114 2.5 120 3.0 117 4.0 105 4.5 99 2.3 110 2.6 108 3.9 97 3.7 91 2.1 107 2.2 102 2.8 92 3.4 87 2.0 101 2.2 97 2.8 87 3.0 83 1.7 91 1.9 88 2.3 79 2.5 76 1.6 85 1.8 83 2.1 75 2.2 79 REVERSE TRANSMISSION COEFFICIENT MAG ANGLE .04 73 .04 71 .04 70 .03 69 .06 65 .06 65 .05 61 .04 60 .08 54 .07 52 .06 55 .06 58 .09 51 .09 50 .07 56 .06 60 .09 49 .08 51 .07 55 .06 60 .10 49 .09 50 .08 56 .07 61 .11 47 .10 49 .09 57 .09 63 .11 47 .11 50 .10 60 .09 64 OUTPUT REFLECTION COEFFICIENT MAG ANGLE .96 -11 .95 -12 .89 -15 .84 -16 .92 -16 .92 -16 .82 -18 .78 -18 .89 -21 .84 -23 .76 -22 .72 -21 .84 -25 .81 -26 .79 -24 .71 -23 .84 -26 .80 -26 .74 -25 .72 -23 .82 -28 .78 -28 .73 -26 .70 -24 .77 -31 .74 -31 .70 -28 .68 -26 .72 -34 .72 -33 .68 -30 .67 -28 200 300 400 450 500 600 700 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 3 Tel (408) 432-1480 Fax (408)) 432-3440 Bipolar Low Noise Transistors 2N2857 INCHES DIM A B C D E F G H J K L MIN. 0.350 0.240 0.315 MAX. 0.370 0.260 0.335 0.040 MILLIMETERS MIN. MAX. 8,89 6,11 8,00 9,40 6,60 8,51 1,02 0.500 0.016 0.021 0.190 0.210 89 DEG 91 DEG 0.029 0.043 43 DEG 47 DEG 0.028 0.034 12,70 0,41 0,53 4,83 5,33 89 DEG 91 DEG 0,74 1,09 43 DEG 47 DEG 0,71 0,86 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 4 Tel (408) 432-1480 Fax (408)) 432-3440 |
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