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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS10UMA-5A HIGH-SPEED SWITCHING USE FS10UMA-5A OUTLINE DRAWING 10.5MAX. Dimensions in mm 4.5 3.2 7.0 1.3 16 3.6 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 0.5 2.6 GATE DRAIN SOURCE DRAIN q 10V DRIVE q VDSS ............................................................................... 250V q rDS (ON) (MAX) ............................................................. 0.52 q ID ......................................................................................... 10A TO-220 APPLICATION CS Switch for CRT Display monitor MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight VGS = 0V VDS = 0V Conditions Ratings 250 20 10 30 10 55 -55 ~ +150 -55 ~ +150 2.0 4.5MAX. Unit V V A A A W C C g Sep.1998 L = 200H Typical value MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FS10UMA-5A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 250V, VGS = 0V ID = 1mA, VDS = 10V ID = 5A, VGS = 10V ID = 5A, VGS = 10V ID = 5A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 250 -- -- 2.0 -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 3.0 0.40 2.00 9.0 950 90 25 20 25 150 40 0.95 -- Max. -- 10 1 4.0 0.52 2.60 -- -- -- -- -- -- -- -- -- 2.27 Unit V A mA V V S pF pF pF ns ns ns ns V C/W Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance VDD = 150V, ID = 5A, VGS = 10V, RGEN = RGS = 50 IS = 5A, VGS = 0V Channel to case Sep.1998 |
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