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| GF4450 N-Channel Enhancement-Mode MOSFET NCHT TRENFE GE SO-8 0.197 (5.00) 0.189 (4.80) 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 4 VDS 60V RDS(ON) 24m ID 7.5A (R) uct Prod New 0.05 (1.27) 0.04 (1.02) 0.245 (6.22) Min. 0.009 (0.23) 0.007 (0.18) Dimensions in inches and (millimeters) 0.019 (0.48) x 45 0.010 (0.25) 0.165 (4.19) 0.155 (3.94) 0.050 (1.27) 0.020 (0.51) 0.013 (0.33) 0.069 (1.75) 0.053 (1.35) 0.009 (0.23) 0.004 (0.10) 0.035 (0.889) 0.025 (0.635) 0.050(1.27) 0.016 (0.41) 0.050 typ. (1.27) Mounting Pad Layout 0- 8 Mechanical Data Case: SO-8 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Mounting Position: Any Weight: 0.5g Features * Advanced Trench Process Technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for Low Voltage DC/DC Converters * Fast Switching for High Efficiency Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(1) Pulsed Drain Current Maximum Power Dissipation(1) TA = 25C TA = 70C (1) Symbol VDS VGS ID IDM PD TJ, Tstg RJA Limit 60 Unit V 20 7.5 50 2.5 1.6 -55 to 150 50 A W C C/W Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance Note: (1) Surface Mounted on FR4 Board, t 10s 7/10/01 GF4450 N-Channel Enhancement-Mode MOSFET Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current (2) Symbol Test Condition Min Typ Max Unit BVDSS VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 60V, VGS = 0V VDS 5V, VGS = 10V VGS = 10V, ID = 7.5A VGS = 6.0V, ID = 6.5A 60 2.0 - - 20 - - - - - - - - 12 14 36 - - V V nA A A m S 100 1.0 - 24 30 - Drain-Source On-State Resistance(2) Forward Transconductance(2) Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Diode Forward Voltage Max. Diode Forward Current VDS = 15V, ID = 7.5A Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 30V, VGS = 10V ID = 7.5A VDD = 30V, RL = 30 ID 1A, VGEN = 10V RG = 6 VGS = 0V VDS = 30V f = 1.0MHZ - - - - - - - - - - 65 12 14 17 13 78 31 3147 283 140 91 - - 30 20 117 40 - - - pF ns nC VSD IS IS = 2.1A, VGS = 0V - - 0.71 - 1.2 2.1 V A Notes: (1) Surface Mounted on FR4 Board, t 10s (2) Pulse test; pulse width 300s, duty cycle 2% VDD ton toff tr 90% Switching Test Circuit VGEN RG VIN D RD VOUT Switching Waveforms td(on) td(off) tf 90 % 10% INVERTED 90% Output, VOUT DUT 10% G 50% 50% S Input, VIN 10% PULSE WIDTH GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Output Characteristics 50 6.0V 50 5.0V 40 VGS =10V 30 VDS = 10V 4.5V 40 Fig. 2 - Transfer Characteristics ID -- Drain-to-Source Current (A) ID -- Drain Current (A) 30 TJ = 125C 20 25C 10 --55C 20 4.0V 10 3.5V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) Fig. 3 - Threshold Voltage vs. Temperature 3.2 3 0.04 0.035 Fig. 4 - On-Resistance vs. Drain Current VGS(th) -- Gate-to-Source Threshold Voltage (V) 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 ID = 250A RDS(ON) -- On-Resistance () 0.03 0.025 VGS = 4.5V 0.02 0.015 0.01 0.005 0 6V 10V --50 --25 0 25 50 75 100 125 150 0 10 20 30 40 50 TJ -- Junction Temperature (C) ID -- Drain Current (A) Fig. 5 - On-Resistance vs. Junction Temperature 1.8 1.6 VGS = 10V ID = 7.5A RDS(ON) -- On-Resistance (Normalized) 1.4 1.2 1 0.8 0.6 0.4 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 6 - On-Resistance vs. Gate-to-Source Voltage 0.04 ID = 7.5A 10 Fig. 7 - Gate Charge VGS -- Gate-to-Source Voltage (V) VDS = 30V ID = 7.5A 8 RDS(ON) -- On-Resistance () 0.03 TJ = 125C 0.02 6 4 0.01 25C 2 0 2 4 6 8 10 0 0 10 20 30 40 50 60 70 VGS -- Gate-to-Source Voltage (V) Qg -- Gate Charge (nC) Fig. 8 - Capacitance 4000 3500 f = 1MHz VGS = 0V Ciss 100 Fig. 9 - Source-Drain Diode Forward Voltage VGS = 0V 2500 2000 1500 1000 500 0 0 Crss 10 20 30 40 50 60 Coss IS -- Source Current (A) C -- Capacitance (pF) 3000 10 1 TJ = 125C 0.1 25C --55C 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VDS -- Drain-to-Source Voltage (V) VSD -- Source-to-Drain Voltage (V) GF4450 N-Channel Enhancement-Mode MOSFET Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 10 - Breakdown Voltage vs. Junction Temperature 75 ID = 250A 73 Fig. 11 - Transient Thermal Impedance BVDSS -- Drain-to-Source Breakdown Voltage (V) 71 69 67 65 63 61 --50 --25 0 25 50 75 100 125 150 TJ -- Junction Temperature (C) Fig. 12 - Power vs. Pulse Duration 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 0.01 100 Fig. 13 - Maximum Safe Operating Area 10 0 s 1m ID -- Drain Current (A) 10 10 10 0m s ms RDS(ON) Limit 1 10s 0.1 VGS = 10V Single Pulse on 1-in2 2oz Cu. TA = 25C 0.1 1 1s s DC 10 100 VDS -- Drain-Source Voltage (V) |
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