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| SSW1N50B / SSI1N50B SSW1N50B / SSI1N50B 520V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. Features * * * * * * 1.5A, 520V, RDS(on) = 5.3 @VGS = 10 V Low gate charge ( typical 8.3 nC) Low Crss ( typical 5.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! G S D2-PAK SSW Series GDS I2-PAK SSI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (Note 1) SSW1N50B / SSI1N50B 520 1.5 0.97 5.0 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/C C C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25C) * 100 1.5 3.6 5.5 3.13 36 0.29 -55 to +150 300 TJ, Tstg TL Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.44 40 62.5 Units C/W C/W C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Electrical Characteristics Symbol Parameter TC = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 520 V, VGS = 0 V VDS = 400 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 520 ------0.54 ------10 100 100 -100 V V/C A A nA nA On Characteristics VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 0.75 A VDS = 40 V, ID = 0.75 A (Note4) 2.0 --- -4.1 1.8 4.0 5.3 -- V S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---260 25 5.5 340 33 7.2 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 1.5 A, VGS = 10 V (Note4, 5) VDD = 250 V, ID = 1.5 A, RG = 25 (Note4, 5) -------- 14 40 35 35 8.3 1.5 3.4 40 90 80 80 11 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.5 A, dIF / dt = 100 A/s (Note4) ------ ---230 0.94 1.5 5.0 1.4 --- A A V ns C Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 80mH, IAS = 1.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 1.5A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Typical Characteristics 10 0 ID, Drain Current [A] ID, Drain Current [A] VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top : 10 0 150 C o 10 -1 25 C -55 C Notes : 1. VDS = 40V 2. 250 s Pulse Test o o Notes : 1. 250 s Pulse Test 2. TC = 25 10 -2 10 -1 -1 10 10 0 10 1 2 4 6 8 10 VDS, Drain-Source Voltage [V] VGS, Gate-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 15 VGS = 10V RDS(ON) [ ], Drain-Source On-Resistance VGS = 20V 9 IDR, Reverse Drain Current [A] 12 10 0 150 25 Notes : 1. VGS = 0V 2. 250 s Pulse Test 6 Note : TJ = 25 3 0 1 2 3 4 5 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 12 VDS = 100V 10 400 VDS = 250V VGS, Gate-Source Voltage [V] Capacitance [pF] 300 Ciss 8 VDS = 400V 6 200 Coss 100 Notes : 1. VGS = 0 V 2. f = 1 MHz 4 Crss 2 Note : ID = 1.5 A 0 -1 10 10 0 10 1 0 0.0 1.5 3.0 4.5 6.0 7.5 9.0 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Typical Characteristics (Continued) 1.2 3.0 2.5 BV DSS , (Normalized) Drain-Source Breakdown Voltage RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 2.0 1.0 1.5 1.0 0.9 Notes : 1. VGS = 0 V 2. ID = 250 A 0.5 Notes : 1. VGS = 10 V 2. ID = 0.75 A 0.8 -100 -50 0 50 100 o 150 200 0.0 -100 -50 0 50 100 o 150 200 TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature 1.8 1 10 Operation in This Area is Limited by R DS(on) 1.5 100 s ID, Drain Current [A] 1 ms 10 0 10 ms DC 10 -1 Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse o 10 -2 ID, Drain Current [A] 1.2 0.9 0.6 0.3 10 0 10 1 10 2 10 3 0.0 25 50 75 100 125 150 VDS, Drain-Source Voltage [V] TC, Case Temperature [] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature (t), T h e r m a l R e s p o n s e D = 0 .5 10 0 0 .2 0 .1 0 .0 5 -1 N o te s : 1 . Z J C (t) = 3 .4 4 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) JC 10 0 .0 2 0 .0 1 s in g le p u ls e PDM t1 t2 Z 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] Figure 11. Transient Thermal Response Curve (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Gate Charge Test Circuit & Waveform 50K 12V 200nF 300nF Same Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS VGS RG RL VDD VDS 90% 10V DUT VGS 10% td(on) t on tr td(off) t off tf Unclamped Inductive Switching Test Circuit & Waveforms L VDS ID RG DUT tp BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD tp ID (t) VDS (t) Time 10V (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG Same Type as DUT VDD VGS * dv/dt controlled by RG * ISD controlled by pulse period VGS ( Driver ) Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) IRM di/dt Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 SSW1N50B / SSI1N50B Package Dimensions D2-PAK (0.40) 9.90 0.20 4.50 0.20 1.30 -0.05 +0.10 1.20 0.20 9.20 0.20 15.30 0.30 1.40 0.20 2.00 0.10 0.10 0.15 2.54 0.30 9.20 0.20 Rev. C, May 2002 2.40 0.20 4.90 0.20 (0.75) 1.27 0.10 2.54 TYP 0.80 0.10 2.54 TYP 10.00 0.20 (8.00) (4.40) 0 ~3 +0.10 0.50 -0.05 10.00 0.20 15.30 0.30 (1.75) (2XR0.45) 0.80 0.10 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation 4.90 0.20 (7.20) SSW1N50B / SSI1N50B Package Dimensions (Continued) I2-PAK 9.90 0.20 (0.40) 4.50 0.20 +0.10 1.30 -0.05 1.20 0.20 9.20 0.20 MAX 3.00 (1.46) 13.08 0.20 (0.94) 1.27 0.10 1.47 0.10 0.80 0.10 10.08 0.20 MAX13.40 (4 ) 5 2.54 TYP 2.54 TYP 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2002 Fairchild Semiconductor Corporation Rev. C, May 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx FACT ActiveArray FACT Quiet Series Bottomless FASTa CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOSTM HiSeC EnSignaTM I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrencha MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERa OPTOLOGICa SMART START OPTOPLANAR SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogica TruTranslation UHC UltraFETa VCX FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I2 |
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