View TGA1328-SCC_1020635.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Product Data Sheet
January 24, 2005
DC-18GHz MPA with AGC
OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications
TGA1328-SCC
Key Features and Performance
* * * * * * * * * * 0.5um pHEMT Technology DC - 14GHz Linear Bandwidth DC -18GHz Saturated Power BW 16dB Small Signal Gain 6dB AGC Range 20ps Edge Rates (20/80) 8Vpp 12.5Gb/s NRZ PRBS 4dB Noise Figure @ 10GHz Low power dissipation Chip Dimensions 3.4mm x 2.3mm
Description
The TriQuint TGA1328-SCC is a medium power wideband AGC amplifier that typically provides 12dB saturated gain with 6dB AGC range. Typical input and output return loss is >10dB. Typical Noise Figure is 2.5dB at 3GHz. Minimum saturated output power is 25dBm. Small signal BW is near 14GHz with saturated power performance to 18GHz. RF ports are DC coupled enabling the user to customize system corner frequencies. The TGA1328-SCC is an excellent choice for 9.9, 10.7, and 12.5Gb/s NRZ applications driving a Lithium Niobate Optical Modulator with electrical Non-Return-to-Zero (NRZ) data. In addition it may be used as a receive AGC amplifier. Drain bias may be applied thru the on-chip drain termination resistor for low drive applications or thru the RF output port for high drive applications. The TGA1328-SCC requires off-chip decoupling and blocking components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The TGA1328SCC is available in chip form or assembled into a surface mount package (see the TGA8652-EPU data sheet for more information on the SMT package).
Primary Applications
* * 12.5GBit OC192 LN/MZ Driver 12.5GBit OC192 AGC Receive
Measured 12.5Gb/s Performance
12.5Gb/s NRZ 2^31-1 Single Stage 12.5 Gb/s eye: 8V(amp) **
** Input 12.5Gb/s data stream generated using an Anritsu PPG (Vin=2Vpp).
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
Product Data Sheet
TGA1328-SCC
MAXIMUM RATINGS
SYMBOL
+
PARAMETER 6/ POSITIVE SUPPLY VOLTAGE
VALUE
NOTES
V
Biased thru On-chip Drain Termination Biased thru the RF Output Port using a Bias Tee POSITIVE SUPPLY CURRENT
12 V 10 V 1/ 110 mA 250 mA 2.25 W 2/
Vd(FET)
+
I
Biased thru On-chip Drain Termination Biased thru the RF Output Port using a Bias Tee POWER DISSIPATION NEGATIVE GATE
Id Pd
Vg Ig
Voltage Gate Current CONTROL GATE
0V to -3V 5 mA
Vctl Ictl
Voltage Gate Current RF INPUT
Vd/2 to -3V 5 mA
3/
PIN VIN TCH TM TSTG
Sinusoidal Continuous Wave Power 12.5Gb/s PRBS Input Voltage Peak to Peak OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE
23 dBm 5 Vpp 150 0C 320 0C -65 to 150 0C 4/ 5/
Notes: 1/ Assure that the combination of Vd and Id does not exceed the maximum power dissipation rating. 2/ When operated at this bias condition with a base plate temperature of 700C, the median life is reduced from >1E8 to 2.4E6 hours. 3/ Assure that Vctl never exceeds Vd during bias up and down sequences. Also, assure that Vctl never exceeds 1.5V during normal operation. 4/ These ratings apply to each individual FET. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings represent the maximum operable values for the device.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
Product Data Sheet
TGA1328-SCC
DC SPECIFICATIONS (100%) (TA = 25 C + 5 C)
NOTES SYMBOL TEST CONDITIONS 2/ STD STD STD STD STD STD STD STD STD LIMITS MIN 110 Infor. only 241 0.5 0.5 13 13 30 35 MAX 516 Infor. only 581 1.5 1.5 30 30 45 56 mA mA mS V V V V Ohm Ohm UNITS
IDSS IMAX Gm 1/ 1/ 1/ 1/ |VP1| |VP2| |VBVGD| |VBVGS| R1,2 R4
1/ 2/
VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion
THERMAL INFORMATION* Parameter Test Condition Pdiss (W) 1.1 TBase (C) 70 TCH (qC) 103 RTJC (qC/W) 30 MTTF (HRS) >1E7
RJC Thermal Resistance (channel to backside of carrier)
Vd(FET)=6.5V, Vctl=1V Id=170mA +/-5%
V+ = 8 V**, Vctrl = 1.5 V, Id = 80 mA 5% Notes:
0.36
70
80
29
>1E8
Based on a detailed thermal model. Assumes worst case power dissipation condition where no RF is applied at the input (no power is dissipated in the load). ** When applying drain bias at V+, several volts are dropped across the internal drain terminations resistor (between V+ and Vd). For Id=80mA, approximately 3.5V is dropped across the drain termination resistor making Vd(FET)=4.5V. Total power dissipation in the FET is .36 watts.
*
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
Product Data Sheet
TGA1328-SCC
RF SPECIFICATIONS (TA = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS MIN 3dB BANDWIDTH SATURATED POWER BW 1/, 2/ SMALL-SIGNAL GAIN MAGNITUDE 2 and 4 GHz 6 GHz 10 GHz 14 GHz 18 GHz 16 15 14 13 11 dB VALUE TYP 14 18 MAX GHz GHz UNITS
SMALL SIGNAL AGC RANGE NOISE FIGURE SATURATED OUTPUT VOLTAGE (EYE AMPLITUDE) 1/, 3/ OUTPUT POWER @ PIN = 14dBm INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE ADDITIVE JITTER GROUP DELAY RISE TIME
Midband 3GHz Vin=2Vpp at 12.5Gb/s PRBS 2, 4, and 6 GHz DC-10 GHz 25 8
6 2.5
dB dB Vpp
dBm -12 dB
DC-10 GHz
-12
dB
<2 DC-10 GHz +/- 20 < 30
pS pS pS
Notes: 1/ Verified at RF on-wafer probe. 2/ S21Bias: V+=8V, adjust Vg1 to achieve Id=80mA+/-5%, Vg2=1.5V Note: Drain bias is applied thru the on-chip drain termination resistor. 3/ Power Bias: Vtee=8V, adjust Vg1 to achieve Id=175mA+/-5%, Vg2=1.5V Note: Drain bias is applied thru the RF output port using a bias tee, voltage is at the DC input to the bias tee.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
4
Product Data Sheet
TGA1328-SCC
TGA1328 Typical Measured S-parameters
20 18 16 14 S21 (dB) 12 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) 0 -5
s11
-10 S11 (dB) and S22 (dB) -15 -20 -25 -30 -35 -40 -45 2 4 6 8 10 12
s22
14
16
18
20
Frequency (GHz)
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
5
Product Data Sheet
TGA1328-SCC
TGA1328 Typical Measured Noise Figure
High Bias: Vd = 8V, Idq = 175mA, Vg2 = +1.5V
10 9 8 Noise Figure (dB) 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz)
Low Bias: Vd = 4.5V, Idq = 80mA, Vg2 = +1.5V
10 9 8 7 Noise Figure (dB) 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
6
Product Data Sheet
TGA1328-SCC
Measured Performance
8V P-P (Saturated) 6V P-P (Near Small Signal)
10GBit/s Performance Output = 8V P-P, Input = 2V P-P scale 2V/div, 20ps/div
10GBit/s Performance Output =6V P-P, Input = 1V P-P scale 2V/div, 20ps/div
8V P-P
6V P-P
2 1's and 2 0's, 100ps/div
2 1's and 2 0's, 100ps/div
8 1's and 8 0's, 200ps/div
8 1's and 8 0's, 200ps/div
32 1's and 32 0's, 1ns/div
32 1's and 32 0's, 1ns/div
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
7
Product Data Sheet
TGA1328-SCC
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
8
Product Data Sheet
TGA1328-SCC
1800pF 0.1uF (2pl)
V+
0.01uF
Vctrl (Vctl) RF in
4 2
RFout and Vd
V(tee)
TGA1328
1
5
7
Note: Drain bias must be applied at Vd (pin 5) thru broadband bias tee for high bias mode. Bypass caps must remain on Pin 4
1800pF
0.1uF (2pl)
Vg
Bias Procedure 1) Make sure no RF power is applied to the device before continuing. 2) Pinch off device by setting Vg to -2.5V. 3) Raise Vd to 8.0V while monitoring drain current. Current should be zero. NOTE: Vd bias should be applied to the RF output port via a bias tee for high power bias. 4) Raise Vctl to 1.0V (no greater than 1.5V). 5) Make Vg more positive until drain current reaches 170mA. (80 mA for low noise bias) 6) Apply RF power. Note Vg supply must be capable of sinking 5mA of current.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
9
Product Data Sheet
TGA1328-SCC
Recommend additional 0.01uF bypass cap located on Vctrl supply line on test fixture
0.01uF
Vctrl
Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300vC. An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes: * * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200vC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
10

▲Up To Search▲

Price & Availability of TGA1328-SCC

	To Download TGA1328-SCC Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .