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| 2N5401 PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg 2N5401 -150 -160 -5.0 600 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= -1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= -100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= -10 Adc, IC=0) Collector Cutoff Current (VCB= -120 Vdc, IE=0) Emitter Cutoff Current (VEB= -4.0 Vdc, I C =0) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min -150 -160 -5.0 Max -0.05 -0.05 Unit Vdc Vdc Vdc uAdc uAdc WEITRON http://www.weitron.com.tw 2N5401 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min TYP Max Unit ON CHARACTERISTICS DC Current Gain (IC= -1.0/1.0 mAdc, VCE=-5.0 Vdc) DC Current Gain (IC= -10 mAdc, VCE= -5.0 Vdc) IC =-50 mAdc, VCE=-5.0 Vdc Collector-Emitter Saturation Voltage (IC= -25 mAdc, IB= -5.0 mAdc) Base-Emitter Saturation Voltage (IC= -50 Adc, IB= -5.0 mAdc) Current-Gain-Bandwidth Product (IC= 10 mAdc, VCE=-5.0 Vdc, f=30MHz) hFE (1) hFE (2) hFE (3) VCE(sat) VBE(sat) fT 80 80 50 100 - 250 -0.5 Vdc -1.0 - Vdc MHz Classification of hFE(2) Rank Range A 80-160 B 120-180 C 150-250 WEITRON http://www.weitron.com.tw 2N5401 200 150 TJ = 125 C hFE , CURRENT GAIN 100 70 50 - 55 C 30 20 0.1 VCE = -1.0 V VCE = -5.0 V 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 25 C F IG 1. DC C urrent G ain FIG2 FIG3 WEITRON http://www.weitron.com.tw 2N5401 TO-92 Outline Dimensions E unit:mm TO-92 H C J K G Dim A B C D E G H J K L Min Max 3.70 3.30 1.40 1.10 0.55 0.38 0.51 0.36 4.70 4.40 3.43 4.70 4.30 1.270TYP 2.44 2.64 14.10 14.50 B L WEITRON http://www.weitron.com.tw D A |
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