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| Amplifier, Power, 18W 7.5-10.5 GHz Features 18 Watt Saturated Output Power Level Eutectically Mounted to Heat Spreader Next level integration is a Silver Epoxy-Based Process Variable Drain Voltage (8-10V) Operation MSAGTM Process MAAP-000079-PED000 Rev -- Preliminary Datasheet Description The MAAP-000079-PED000 is a 3 stage 18W power amplifier with on-chip bias networks, eutectically mounted on a 10-mil thick Copper Molybdenum (CuMo) pedestal. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate (MSAGTM) Process, each device is 100% RF tested at the die-on-pedestal assembly level to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, lownoise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Primary Applications SatCom Commercial Avionics Radar Also Available in: Description Part Number Ceramic Package MAAP-000079-PKG001 Sample Board (Die) MAAP-000079-SMB004 Sample Board (Pkg) MAAP-000079-SMB001 Mechanical Sample (Die) MAAP-000079-MCH000 Electrical Characteristics: T B = 40C1, Z0 = 50 , VDD = 10V, IDQ = 4A2, Pin = 18 dBm, Rg = 20 Parameter Bandwidth Output Power Output Power, 8-10 GHz 1-dB Compression Point Small Signal Gain Power Added Efficiency Input VSWR Output VSWR Gate Current Drain Current, under RF Drive Output Third Order Intercept Output Third Order Intermod, Pout = 39 dBm (DCL) 1. 2. Symbol f POUT POUT P1dB G PAE VSWR VSWR IGG IDD TOI IM3 Typical 7.5-10.5 42.5 43 42 29 30 2.5:1 2.5:1 50 6 48 18.5 mA A dBm dBc Units GHz dBm dBm dBm dB % 1 TB = MMIC Base Temperature Adjust VGG between -2.6 and -1.5V to achieve specified Idq. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz Maximum Ratings3 Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Symbol PIN VDD VGG IDQ PDISS TJ TSTG Absolute Maximum 23 +12.0 -3.0 6.5 65 170 -55 to +150 MAAP-000079-PED000 Rev -- Preliminary Datasheet Units dBm V V A W C C 3. Operation beyond these limits may result in permanent damage to the part. Recommended Operating Conditions4 Characteristic Drain Voltage Gate Voltage Input Power Thermal Resistance MMIC Base Temperature Symbol VDD VGG PIN JC TB Min 4.0 -2.6 Typ 10.0 -2.2 18.0 3.0 Note 5 Max 10.0 -1.5 21.0 Unit V V dBm C/W C 4. Operation outside of these ranges may reduce product reliability. 5. MMIC Base Temperature = 170C -- JC* VDD * I DQ Power Derating Curve, Quiescent (No RF) Operating Instructions Peak Power Dissipation [Watts] 80 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 140 160 180 Maximum Allowable Base Temperature [C] This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG = -2.7 V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 10.0 V. 3. Adjust VGG to set IDQ, (approximately @ -2.2 V). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev -- Preliminary Datasheet All Data is at 40C MMIC base temperature, CW stimulus, unless otherwise noted. 50 48 46 44 50 46 42 38 50 48 46 Output Power (dBm) 44 42 40 38 36 34 32 30 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 VDS=10V VDS=8V POUT (dBm) 40 38 POUT 36 34 32 30 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 PAE 30 26 22 18 14 10 11.0 PAE (%) 42 34 Frequency (GHz) Figure 1. Output Power and Power Added Efficiency vs. Frequency at V DD = 10V and P in = 18 dBm Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage 50 48 46 44 45 42 39 40 37 34 Gain @ 10V Input VSWR Output VSWR 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 7 7.5 8 8.5 9 9.5 10 10.5 11 PAE (%) 42 40 38 36 PO UT : VDS=10V POUT : VDS=8V PAE : VDS=8V 33 30 27 24 PAE : VDS=10V Relative Gain (dB) 36 31 28 25 22 19 16 13 10 POUT (dBm) 34 32 30 7.0 7.5 8.0 21 18 15 11.0 8.5 9.0 9.5 10.0 10.5 Frequency (GHz) Figure 3. Saturated Output Power and Power Added Efficiency vs. Frequency and Drain Voltage Frequency (GHz) Figure 4. Small Signal Gain and Input and Output VSWR vs. Frequency. 45 43 7.0 6.8 6.6 50 Pout (dBm), Gain (dB), PAE (%) 41 39 37 35 33 31 29 27 25 30 40 50 60 70 80 90 100 110 120 130 140 45 Output Power (dBm) 6.4 6.2 6.0 5.8 5.6 40 Current (A) 35 7.5 GHz 30 9.5 GHz 8.5 GHz 10.5 GHz Pout SSG PAE IDS 5.4 25 5.2 5.0 150 20 2 4 6 8 10 12 14 16 18 20 22 Junction Temperature (C) Input Power (dBm) Figure 6. Output Power vs. Input Power at VDD = 10V Fig 5. Output Power, Power Added Efficiency, and Drain Current vs. Junction Temperature at VD=10V, f=9GHz, and Pin=18dBm. 3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. VSWR Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev -- Preliminary Datasheet All Data is at 40C MMIC base temperature, CW stimulus, unless otherwise noted. 40 8 7.5 GHz 8.5 GHz 9.5 GHz 10.5 GHz 35 30 7 6 5 25 PAE (%) 20 IDS (A) 4 3 2 1 0 2 4 6 8 10 12 14 16 18 20 22 7.5 GHz 9.5 GHz 8.5 GHz 10.5 GHz 15 10 5 0 -2 0 2 4 6 8 10 12 14 16 18 20 22 24 Input Power (dBm) Input Power (dBm) Figure 8. Drain Current vs. Input Power at V DD = 10V 35 33 31 Fig 7. Power Added Efficiency vs. Input Power at VD=10V. 35 33 31 Relative Gain (dB) 7.5 GHz 9.0 GHz 10.5 GHz Relative Gain (dB) 29 27 25 23 21 19 17 15 25 27 29 31 33 35 37 39 41 43 45 29 27 25 23 21 19 17 15 25 27 29 31 33 35 37 39 41 43 45 7.5 GHz 9.0 GHz 10.5 GHz Output Power (dBm) Output Power (dBm) Figure 9. Relative Gain vs. Output Pow er by Frequency at VD =8V and 25% IDSS Figure 10. Relative Gain vs. Output Power by Frequency at VD=10V and 25% IDSS 60 58 56 54 8 GHz 9 GHz 10 GHz 100 90 80 70 8 GHz 9 GHz 10 GHz TOI (dBm) 50 48 46 44 42 40 12 14 16 18 20 22 24 26 28 30 32 34 36 38 IMD3 (dBc) 52 60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Figure 11. Third Order Intercept vs. Output Power and Frequency at 8V. Fundamental Output Power per Tone (dBm) Figure 12. Third Order Intermod vs. Output Power and Frequency at 8V. 4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz 60 58 56 54 8 GHz 9 GHz 10 GHz MAAP-000079-PED000 Rev -- Preliminary Datasheet All Data is at 40C MMIC base temperature, CW stimulus, unless otherwise noted. 100 90 80 70 8 GHz 9 GHz 10 GHz IMD3 (dBc) 12 14 16 18 20 22 24 26 28 30 32 34 36 38 TOI (dBm) 52 50 48 46 44 42 40 60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Figure 13. Third Order Intercept vs. Output Power and Frequency at 10V. Fundamental Output Power per Tone (dBm) Figure 14. Third Order Intermod vs. Output Power and Frequency at 10V. 60 58 56 54 8 GHz 9 GHz 10 GHz 60 55 50 45 8 GHz 9 GHz 10 GHz TOI (dBm) 52 50 48 46 44 42 40 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 IMD3 (dBc) 40 35 30 25 20 15 10 -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 MMIC Base Temperature (C) Figure 15. Third Order Intercept vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. MMIC Base Temperature (C) Figure 16. Third Order Intermod vs. Temperature and Frequency at 10V and Pout = 39 dBm DCL. 60 58 56 54 100 90 80 70 10% IDSS 25% IDSS 10% IDSS 25% IDSS 50 48 46 44 42 40 12 14 16 18 20 22 24 26 28 30 32 34 36 38 IMD3 (dBc) TOI (dBm) 52 60 50 40 30 20 10 0 12 14 16 18 20 22 24 26 28 30 32 34 36 38 Fundamental Output Power, Single Tone (dBm) Figure 17. Third Order Intercept vs. Output Power and %IDSS at 10V and 9GHz. Fundamental Output Power per Tone (dBm) Figure 18. Third Order Intermod vs. Output Power and %IDSS at 10V and 9GHz. 5 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz MAAP-000079-PED000 Rev -- Preliminary Datasheet Figure 19. Fixture used to characterize MAAPGM0079-DIE under CW stimulus. 6 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz Mechanical Information MAAP-000079-PED000 Rev -- Preliminary Datasheet Chip edge to bond pad dimensions are shown to the center of the bond pad. Figure 20. Die Layout Bond Pad Dimensions Pad RF In and Out DC Drain Supply Voltage VD1,2 DC Drain Supply Voltage VD3 DC Gate Supply Voltage VG1,2 DC Gate Supply Voltage VG3 7 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Pad No. 1 2 3 4 5 Size (m) 100 x 200 200 x 150 500 x 200 150 x 150 150 x 125 Size (mils) 4x8 8x6 20 x 8 6x6 6x5 * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz Recommended Layout and Wire Bonding Configuration GND MAAP-000079-PED000 Rev -- Preliminary Datasheet In implementing the DC/ RF crossover shown, the following rules must applied. 1. 2. 3. 4. the DC crossovers should approach and cross the RF trace at a 90 degree angle; the printed DC traces that approach the RF line should be stopped 2 substrate heights from the RF line edge; the rated current capability of the DC crossovers should be greater than the maximum current of the device; and the wires or ribbons used to make the DC crossovers should clear the RF trace by ~ 1 substrate height. Power Supply Sequencing: Must apply negative bias to VGG before applying positive bias to VDD to prevent damage to amplifier. Die Handling: Refer to Application Note AN3016. All Application Notes may be accessed by going to http://www.macom.com/ Application%20Notes/index.htm. 8 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. Amplifier, Power, 18W 7.5-10.5 GHz Next Level Assembly Instructions: MAAP-000079-PED000 Rev -- Preliminary Datasheet Pedestal Die Attach: The following paragraphs detail recommendations and instructions for the integration of the die on pedestal (IC assembly) and mating substrates to the next level assembly. These recommendations are summarized pictorially in Figure 20. 50O Transmission Line IC Pedestal 5-10 mils 15 mil Alumina Housing/Carrier <1.5 mil High Thermal Conductivity Ag Epoxy Standard Attach Ag Epoxy Figure 20. Cross-section of die-on-pedestal integration at next level assembly To attach the die/pedestal assembly to the next level assembly, use a high thermal conductivity silver loaded epoxy. Two epoxies are recommended for this purpose, Diemat (www.diemat.com) PNs DM6030HK and DM4030LD with bulk thermal conductivities of 60 and 15 W/m-C, respectively. Silver-filled epoxies with conductivities < 10 W/m-C are not recommended for use in attaching these IC assemblies. DM6030HK is recommended for use when the coefficient of thermal expansion (CTE) of the material to which the IC assembly is to be attached is similar to that of CuMo (CTE ~ 7ppm). A next level assembly attach material with a CTE range of 4-10ppm would be acceptable. DM4030LD is recommended when the CTE of the next level assembly material is significantly greater than CuMo, e.g, Copper and Aluminum with CTEs of 14 and 23 ppm, respectively. Bondline thickness, the as-cured thickness of the silver epoxy layer between the IC assembly and next level assembly attach surface, is a critical parameter in terms of device performance and reliability. Bondline thickness should be maintained between 1 and 1.5 mils. A bondline thickness of < 1 mil reduces the sheer strength of the mechanical attach. Bondline thicknesses > 1.5 mils impacts in an incremental fashion the junction temperature of the IC and thereby the MTTF. The pedestal thickness used in the IC assembly is set at 10 mils such that the final IC assembly thickness is ~ 14 mils making it approximately planar with a mating substrate of 15 mil alumina, a thickness commonly used through X-band. This surface planarity was an objective because it results in shorter RF bond wire lengths between the IC assembly RF I/O and the mating substrate transmission line. Long bond wires can shift the load impedance required for ideal power transfer. Shorter RF bond wires result in improved RF performance. In any nominal microelectronic manufacturing environment, the process of silver epoxy attach of substrates and IC assemblies to the next level assembly can result in variable epoxy squeeze-out or run-out at the substrate or IC assembly peripheries. This variability, if not compensated for in the design of the overall assembly, can result in a high number of assembly failures due to epoxy wicking. This wicking process can occur when a mating substrate and IC assembly are placed too close to each other. To avoid this occurrence, a designed-in 5-10 mil spacing between the IC assembly and mating substrates is recommended. Wirebonding: Bond @ 160C using standard ball or thermal compression wedge bond techniques. For DC pad connections, use either ball or wedge bonds. For best RF performance, use wedge bonds of shortest length, although ball bonds are also acceptable. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 9 * North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. |
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