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| Semiconductor RFL4N12, RFL4N15 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9192. September 1998 Features [ /Title (RFL4N 12, RFL4N1 5) /Subject 4A, 20V nd 50V, .400 hm, Nhannel ower OSETs) /Author ) /Keyords Harris emionducor, Nhannel ower OSETs, O05AF) /Creator ) /DOCIN O pdfark * 4A, 120V and 150V * rDS(ON) = 0.400 * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Majority Carrier Device Ordering Information PART NUMBER RFL4N12 RFL4N15 PACKAGE TO-205AF TO-205AF BRAND RFL4N12 RFL4N15 Symbol D G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-205AF DRAIN (CASE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1998 File Number 1462.2 5-1 RFL4N12, RFL4N15 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified RFL4N12 Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 1M) (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 120 120 4 15 20 8.33 0.0667 -55 to 150 260 RFL4N15 150 150 4 15 20 8.33 0.0667 -55 to 150 260 UNITS V V A A V W W/oC oC oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications PARAMETER TC = 25oC, Unless Otherwise Specified SYMBOL BVDSS TEST CONDITIONS ID = 250A, VGS = 0V 120 150 VGS(TH) IDSS VGS = VDS , ID = 250A (Figure 8) VDS = Rated BVDSS VDS = 0.8 x Rated BVDSS , TC = 125oC 2 VDS = 25V, VGS = 0V, f = 1MHz (Figure 9) 40 165 90 90 4 1 25 100 1.6 0.400 60 250 135 135 850 230 100 15 V V V A A nA V ns ns ns ns pF pF pF oC/W MIN TYP MAX UNITS Drain to Source Breakdown Voltage RFL4N12 RFL4N15 Gate Threshold Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On-Voltage (Note 2) Drain to Source On Resistance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse-Transfer Capacitance Thermal Resistance Junction to Case IGSS VDS(ON) rDS(ON) td(ON) tr td(OFF) tf CISS COSS CRSS RJC VGS = 20V, VDS = 0V ID = 4A, VGS = 10V ID = 4A, VGS = 10V (Figures 6, 7) VDD = 75V, ID 2A, RG = 50, VGS = 10V (Figures 10, 11, 12) Source to Drain Diode Specifications PARAMETER Source to Drain Diode Voltage (Note 2) Reverse Recovery Time NOTE: 2. Pulse Test: pulse duration 300s max, duty cycle 2%. SYMBOL VSD trr ISD = 2A ISD = 2A, dISD/dt = 100A/s 200 TEST CONDITIONS MIN TYP MAX 1.4 UNITS V ns 5-2 RFL4N12, RFL4N15 Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 ID, DRAIN CURRENT (A) 0 50 100 150 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 Unless Otherwise Specified 4.5 4.0 0.8 0.6 0.4 0.2 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 TC = 25oC TJ = MAX RATED ID , DRAIN CURRENT (A) DC 20 PULSE DURATION = 250s TC = 25oC 15 VGS = 20V VGS = 10V VGS = 7V 10 VGS = 6V 5 VGS = 5V VGS = 4V VGS = 8V ID , DRAIN CURRENT (A) 1 OP ER AT IO N OPERATION IN THIS AREA LIMITED BY rDS(ON) 0.1 RFL4N12 RFL4N15 0.01 1 100 10 VDS , DRAIN TO SOURCE VOLTAGE (V) 1000 0 0 1 2 3 4 5 6 7 8 VDS , DRAIN TO SOURCE VOLTAGE (V) 9 10 FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. SATURATION CHARACTERISTICS IDS(ON) , DRAIN TO SOURCE CURRENT (A) 20 VDS = 10V PULSE DURATION = 250s rDS(ON) , DRAIN TO SOURCE ON RESISTANCE () TC = 25oC 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 TC = -40oC TC = 25oC VGS = 10V PULSE DURATION = 250s TC = 125oC 15 TC = -40oC 10 TC = 125oC 5 TC = 125oC TC = -40oC 0 2 4 6 VGS, GATE TO SOURCE (V) 8 10 0 0 0 2 4 6 8 10 12 14 ID , DRAIN CURRENT (A) 16 18 20 FIGURE 5. TRANSFER CHARACTERISTICS FIGURE 6. DRAIN TO SOURCE ON RESISTANCE vs DRAIN CURRENT 5-3 RFL4N12, RFL4N15 Typical Performance Curves 2.5 NORMALIZED DRAIN TOSOURCE ON RESISTANCE ID = 4A VGS = 10V NORMALIZED GATE THRESHOLD VOLTAGE 2 Unless Otherwise Specified (Continued) 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 ID = 250A 1.5 1 0.5 -50 0 50 100 150 200 0.6 -50 0 50 100 150 200 TJ , JUNCTION TEMPERATURE ( oC) TJ , JUNCTION TEMPERATURE (oC) FIGURE 7. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1200 1000 C, CAPACITANCE (pF) 800 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS CDS + CGS FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 150 VGS, DRAIN TO SOURCE VOLTAGE (V) GATE TO SOURCE VOLTAGE RL = 37.5 IG(REF) = 0.46mA VGS = 10V 0.75BVDSS 0.50BVDSS 0.25BVDSS 0.75BVDSS 0.50BVDSS 0.25BVDSS 10 VGS, GATE TO SOURCE VOLTAGE (V) 112.5 VDD = BVDSS 8 VDD = BVDSS 6 600 CISS 400 200 0 0 10 20 30 40 50 75 4 37.5 2 COSS CRSS 60 70 DRAIN TO SOURCE VOLTAGE 0 20 IG (REF) IG (ACT) t, TIME (s) 80 IG (REF) IG (ACT) 0 VDS , DRAIN TO SOURCE VOLTAGE (V) NOTE: Refer to Harris Application Notes AN7254 and AN7260. FIGURE 9. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 10. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT Test Circuits and Waveforms tON td(ON) tr RL VDS + tOFF td(OFF) tf 90% 90% RG DUT - VDD 0 10% 90% 10% VGS VGS 0 10% 50% PULSE WIDTH 50% FIGURE 11. SWITCHING TIME TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5-4 |
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