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2MBI400N-060-01
600V / 400A 2 in one-package
Features
* VCE(sat) classified for easy parallel connection * High speed switching * Voltage drive * Low inductance module structure
IGBT Module
Applications
* Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines
Equivalent Circuit Schematic
C2E1
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Continuous 1ms Symbol VCES VGES Unit Rating V 600 V 20 A IC 400 A IC pulse 800 A -IC 400 A -IC pulse 800 W PC 1500 C Tj +150 C Tstg -40 to +125 Vis AC 2500 (1min.) V N*m Mounting *1 3.5 N*m Terminals *2 4.5
C1
E2
1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque
G1
E1 G2 Current control circuit
E2
VCE(sat) classification
Rank F A B C D Lenge 1.85 2.00 2.15 2.30 2.50 Conditions to 2.10V to 2.25V to 2.40V to 2.60V to 2.80V Ic = 400A VGE = 15V Tj = 25C
*1 Recommendable value : 2.5 to 3.5 N*m (M5) or (M6) *2 Recommendable value : 3.5 to 4.5 N*m
Electrical characteristics (at Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. - - 4.5 1.8 - - - - - - - - - - - - - 26400 5870 2670 0.6 0.2 0.6 0.2 - - Conditions Max. 2.0 30 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=20V VCE=20V, IC=400mA VGE=15V, IC=400A VGE=0V VCE=10V f=1MHz VCC=300V IC=400A VGE=15V RG=4.7ohm IF=400A, VGE=0V IF=400A mA A V V pF Unit
s
V s
Thermal resistance characteristics
Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. - - - - - 0.025 Conditions Max. 0.085 0.15 - IGBT Diode the base to cooling fin C/W C/W C/W Unit
Thermal resistance
* : This is the value which is defined mounting on the additional cooling fin with thermal compound
2MBI400N-060-01
Characteristics (Representative)
Collector current vs. Collector-Emitter voltage Tj=25C
IGBT Module
Collector current vs. Collector-Emitter voltage Tj=125C
800
800
Collector current : Ic [A]
400
Collector current : Ic [A]
600
600
400
200
200
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V]
Collector-Emitter vs. Gate-Emitter voltage Tj=25C
Collector-Emitter vs. Gate-Emitter voltage Tj=125C
10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25
10
8
8
Collector-Emitter voltage :
6
6
4
4
2
2
0 Gate-Emitter voltage : VGE [V]
0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V]
Switching time vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V, Tj=25C
Switching time vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V, Tj=125C
1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.]
1000
100
100
10 0 200 400 600 Collector current : Ic [A]
10 0 200 400 600 Collector current : Ic [A]
2MBI400N-060-01
IGBT Module
Switching time vs. RG Vcc=300V, Ic=400A, VGE=15V, Tj=25C 500
Dynamic input characteristics Tj=25C 25
Switching time : ton, tr, toff, tf [n sec.]
1000 Collector-Emitter voltage : VCE [V]
400
20
300
15
100
200
10
100
5
10 1 5 Gate resistance : RG [ohm] 10
0 0 500 1000 1500 2000 Gate charge : Qg [nC]
0 2500
Forward current vs. Forward voltage VGE=0V 1000
Reverse recovery characteristics trr, Irr, vs. IF
600
Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.]
800
Forward current : IF [A]
100
400
200
0 0 1 2 Forward voltage : VF [V] 3 4 0 200 400 600 Forward current : IF [A]
Transient thermal resistance 4000 3500 Thermal resistance : Rth (j-c) [C/W]
Reversed biased safe operating area > +VGE=15V, -VGE < 15V, Tj < 125C, RG = 4.7 ohm = =
3000 0.1 Collector current : Ic [A] 2500
2000 1500
1000
0.01 500 0 0.001 0.01 0.1 1 0 100 200 300 400 500 600 Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V]
Gate-Emitter voltage : VGE [V]
2MBI400N-060-01
IGBT Module
Switching loss vs. Collector current Vcc=300V, RG=4.7 ohm, VGE=15V 40 100
Capacitance vs. Collector-Emitter voltage Tj=25C
Switching loss : Eon, Eoff, Err [mJ/cycle]
30
Capacitance : Cies, Coes, Cres [nF]
10
20
10
1
0 0 200 400 600 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V]
Outline Drawings, mm

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