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7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: (561) 842-0305 FAX: (561) 845-7813
APPLICATIONS:
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2N3720
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High-Speed Switching Medium-Current Switching High-Frequency Amplifiers
FEATURES:
*
Collector-Emitter Sustaining Voltage: VCEO(SUS) = 60 Vdc (Min) - 2N3720 DC Current Gain: hFE = 25-180 @ IC = 1.0 Adc Low Collector-Emitter Saturation Voltage: VCE(sat) = 0.75 Vdc @ IC = 1.0 Adc High Current-Gain - Bandwidth Product: fT = 90 MHz (Typ)
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Silicon PNP Power Transistors
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DESCRIPTION:
These power transistors are produced by PPC's DOUBLE DIFFUSED PLANAR process. This technology produces high voltage devices with excellent switching speeds, frequency response, gain linearity, saturation voltages, high current gain, and safe operating areas. They are intended for use in Commercial, Industrial, and Military power switching, amplifier, and regulator applications. Ultrasonically bonded leads and controlled die mount techniques are utilized to further increase the SOA capability and inherent reliability of these devices. The temperature range to 200C permits reliable operation in high ambients, and the hermetically sealed package insures maximum reliability and long life.
TO-5
VALUE
60 60 4.0 10 3.0 0.5 -65 to 200 -65 to 200 6.0 34.3 1.0 5.71 29 175
ABSOLUTE MAXIMUM RATINGS: MAXIMUM
SYMBOL VCEO* VCB* VEB* IC* IC* IB* T STG* T J* PD*
PD*
CHARACTERISTIC
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Peak Collector Current Continuous Collector Current Base Current Storage Temperature Operating Junction Temperature Total Device Dissipation TC = 25 C Derate above 25 C Total Device Dissipation T A = 25 C Derate above 25 C Thermal Resistance Junction to Case Junction to Ambient
UNITS
Vdc Vdc Vdc Adc Adc Adc
C C Watts
mW/ C Watts mW/ C
C/W C/W
JC
* Indicates JEDEC registered Data. MSC1027.PDF 02-24-99
2N3720
ELECTRICAL CHARACTERISTICS: (25 Case Temperature Unless Otherwise Noted)
SYMBOL
VCEO(sus)* ICEX* ICBO* IEBO* hFE*
CHARACTERISTIC
Collector-Emitter Sustaining Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 1)
TEST CONDITIONS
IC = 20 mAdc, IB = 0 (Note 1) VCE = 60 Vdc, VBE(off) = 2.0 Vdc VCE = 60 Vdc, VBE(off) = 2.0 Vdc, TC = 150 C VCB = 60 Vdc, IE = 0 VBE = 4.0 Vdc, IC = 0 IC = 500 mAdc, VCE = 1.5 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc IC = 1.0 Adc, VCE = 1.5 Vdc, TC =
VALUE Min. Max.
60 ------------20 25 ---10 1.0 10 1.0 ---180 ---0.75 1.5 1.5 2.3 ----
Units
Vdc
Adc
mAdc
Adc
mAdc ---------Vdc Vdc Vdc Vdc MHz
- 40 C
15 ------------60
VCE(sat)*
VBE(sat)* fT* Cob* Cib* ton* toff*
Collector-Emitter Saturation Voltage (Note 1) Base-Emitter Saturation Voltage (Note 1) Current-Gain Bandwidth Product (Note 2) Output Capacitance Input Capacitance Turn-on Time Turn-off Time
- 40 C to + 100 C IC = 3.0 Adc, IB = 300 mAdc, TC = - 40 C to + 100 C
IC = 1.0 Adc, IB = 100 mAdc, TC = IC = 1.0 Adc, IB = 100 mAdc, TC = IC = 3.0 Adc, IB = 300 mAdc, TC =
- 40 C to + 100 C - 40 C to + 100 C
IC = 500 mAdc, VCE = 10 Vdc, ftest = 30 MHz
VCB = 10 Vdc, IE = 0, f = 0.1 MHz VEB = 0.5 Vdc, IC = 0, f = 0.1 MHz VCC = 12 Vdc, VBE(off) = 0, IC = 1.0 Adc, IB1 = 0.1 Adc VCC = 12 Vdc, IC = 1.0 Adc, IB1 = IB2 = 100 mAdc
-------------
120 1000 100 400
pF pF ns ns
Note 1: Pulse Test: Pulse width 300S, Duty Cycle = 2.0%. Note 2: fT = | hfe | * ftest * Indicates JEDEC registered data
MSC1027.PDF 02-24-99
2N3720
PACKAGE MECHANICAL DATA:
1.500 [38.10] MIN .031 [.787] .240 [6.09] .260 [6.60] .010 [.254] .030 [.762] 45 . 029 [.736] .045 [1.14] .200 [5.08] O.305 [7.75] O.335 [8.51] .100 [2.54] O.017 +.002 [.432] [.025] -.001
[+.051]
.100 [2.54] O.335 [8.51] O.370 [9.40]
NOTE: DIMENSIONS IN [ ] = MILLIMETERS
MSC1027.PDF 02-24-99

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