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| Ordering number : ENA0235 2SA2209 SANYO Semiconductors DATA SHEET PNP Epitaxial Planar Silicon Transistor 2SA2209 Applications * 50V / 15A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features * * * * Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C Conditions Ratings --50 --50 --6 --15 --20 --3 1 20 150 --55 to +150 Unit V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob Conditions VCB=-40V, IE=0A VEB=-4V, IC=0A VCE=-2V, IC=--330mA VCE=-2V, IC=--10A VCE=-10V, IC=--700mA VCB=-10V, f=1MHz 200 50 120 140 MHz pF Ratings min typ max --10 --10 500 Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1306EA TI IM TC-00000354 No. A0235-1/4 2SA2209 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions IC=--7.5A, IB=--375mA IC=--7.5A, IB=--375mA IC=--100A, IE=0A IC=--1mA, RBE= IE=--100A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. --50 --50 --6 80 300 45 Ratings min typ --250 max --500 --1.2 Unit mV V V V V ns ns ns Package Dimensions unit : mm (typ) 7518-003 6.5 5.0 2.3 1.5 Package Dimensions unit : mm (typ) 7003-003 0.5 4 4 7.0 1.5 6.5 5.0 2.3 0.5 5.5 5.5 7.0 0.8 1.6 7.5 1 0.5 0.6 2 0.8 1.2 3 0 to 0.2 1.2 0.6 2.5 0.85 0.7 0.85 0.5 1.2 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Switching Time Test Circuit PW=20s D.C.1% INPUT VR 50 RB + 100F VBE=5V + 470F VCC= --25V RL IB1 IB2 OUTPUT IC=20IB1= --20IB2= --7A --15 --14 --13 --12 --11 --10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 --0.5 --1.0 --1.5 --1 IC -- VCE --800 --700 -600m mA mA A --50 0mA mA --250 --200mA A 00m --3 --150mA A 50m --3 A --100mA 0m mA--40 0 ---30 --250m 200m 0m A A A --1 80 mA --8 --7 IC -- VCE A 0m --10 A 20m A --80m --60mA Collector Current, IC -- A Collector Current, IC -- A --6 --5 --4 5 --4 --1 A 0m --14 A 60m --1 --40mA --50mA --20mA --3 --2 --20mA --10mA IB=0mA --2.0 IT09987 0 0 --0.2 --0.4 --0.6 IB=0mA --0.8 --1.0 IT09988 Collector-to-Emitter Voltage, VCE -- V Collector-to-Emitter Voltage, VCE -- V No. A0235-2/4 2SA2209 --16 --14 IC -- VBE VCE= --2V 1000 7 5 hFE -- IC VCE= --2V Ta=75C 25C --25C Collector Current, IC -- A DC Current Gain, hFE --12 --10 --8 --6 --4 --2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT09989 3 2 100 7 5 3 2 Ta= 75 C 25 --25 C C 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Base-to-Emitter Voltage, VBE -- V 1000 7 5 Collector Current, IC -- A 1000 IT09900 hFE -- IC fT -- IC VCE= --10V Ta=25C 7 Gain-Bandwidth Product, fT -- MHz 5 5 3 2 DC Current Gain, hFE 3 2 VC = E mV 00 --2 100 7 5 3 2 100 7 5 3 2 --2 V --50 V 0m --1V 10 --0.01 2 3 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 10 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 1000 7 IT09991 --1.0 7 Cob -- VCB Collector Current, IC -- A 5 7 --10 IT09992 VCE(sat) -- IC f=1MHz IC / IB=20 75 C 25 C --25 C 2 3 IT09994 23 IT09996 Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 --0.1 7 5 3 2 100 7 5 3 2 --0.01 10 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 7 5 --0.01 Ta= --25C 75C 25C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Collector-to-Base Voltage, VCB -- V 5 3 IT09993 3 VCE(sat) -- IC Collector Current, IC -- A VBE(sat) -- IC IC / IB=50 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V --1.0 7 5 3 2 --0.1 7 5 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 2 --1.0 Ta= --25C 25C 2 C 5 =7 C Ta 5 --2 C 25 Ta= --25C 7 5 75C 25C 3 75C 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 2 --0.01 23 5 7 --0.1 23 5 7 --1.0 23 5 7 --10 --0.01 --0.01 Collector Current, IC -- A IT09995 Collector Current, IC -- A No. A0235-3/4 Ta = IC / IB=20 2SA2209 5 3 2 Forward Bias A S O ICP= --20A Collector Dissipation, PC -- W 1.2 PC -- Ta Collector Current, IC -- A --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 IC= --15A 10 0m s 1.0 0 =5 PT s 0 s 1m 0.8 s m 10 DC op 0.6 o ati er n 0.4 0.2 --0.01 --0.1 Tc=25C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 0 0 20 40 60 80 100 120 140 160 IT11947 Collector-to-Emitter Voltage, VCE -- V 25 Ambient Temperature, Ta -- C IT11945 PC -- Tc Collector Dissipation, PC -- W 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT11946 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2006. Specifications and information herein are subject to change without notice. PS No. A0235-4/4 |
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