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| Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm For low-frequency power amplification Complementary to 2SD1994A I Features * Allowing supply with the radial taping 6.90.1 1.05 2.50.1 0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating -60 -50 -5 -1.5 -1 1 150 -55 to +150 Unit V V V A A W C C 1 2 3 0.45-0.05 +0.1 I Absolute Maximum Ratings Ta = 25C 0.45-0.05 2.50.5 2.50.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: Emitter 2: Collector 3: Base MT2 Type Package 1.20.1 0.65 max. 0.45+ 0.1 - 0.05 Note) *: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion 2.50.1 (HW Type) I Electrical Characteristics Ta = 25C 3C Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio *1 Symbol ICBO VCBO VCEO VEBO hFE1 hFE2 *2 Conditions VCB = -20 V, IE = 0 IC = -10 A, IE = 0 IC = -2 mA, IB = 0 IE = -10 A, IC = 0 VCE = -10 V, IC = -500 mA VCE = -5 V, IC = -1 A IC = -500 mA, IB = -50 mA IC = -500 mA, IB = -50 mA VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz Min -60 -50 -5 85 50 Typ Max - 0.1 14.50.5 0.5 4.50.1 Unit A V V V 340 - 0.4 -1.2 200 20 30 Collector to emitter saturation voltage *1 Base to emitter saturation voltage *1 Transition frequency Collector output capacitance Note) *1: Pulse measurement *2: Rank classification Rank hFE1 Q 85 to 170 VCE(sat) VBE(sat) fT Cob V V MHz pF R 120 to 240 S 170 to 340 No-rank 85 to 340 Product of no-rank is not classified and have no indication for rank. 1 2SB1322A PC Ta 1.2 Copper plate at the collector is more than 1 cm2 in area, 1.7 mm in thickness. -1.5 Transistors IC VCE Ta = 25C IB = -10 mA -8 mA -7 mA -6 mA -5 mA -4 mA -3 mA -2 mA -1 mA -1.2 VCE = -10 V TC = 25C -1.0 IC IB Collector power dissipation PC (W) 1.0 -1.25 Collector current IC (A) 0.8 -1.0 0.6 - 0.75 0.4 - 0.5 0.2 - 0.25 0 0 0 20 40 60 80 100 120 140 160 Collector current IC (A) -9 mA - 0.8 - 0.6 - 0.4 - 0.2 0 -2 -4 -6 -8 -10 0 0 -2 -4 -6 -8 -10 -12 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base current IB (mA) VCE(sat) IC Collector to emitter saturation voltage VCE(sat) (V) VBE(sat) IC Base to emitter saturation voltage VBE(sat) (V) -100 -30 -10 -3 25C -1 Ta = -25C 100C IC / IB = 10 hFE IC 500 VCE = -10 V -100 -30 -10 -3 -1 Ta = 100C 25C IC / IB = 10 Forward current transfer ratio hFE 400 300 Ta = 100C 25C -25C - 0.3 - 0.1 - 0.3 - 0.1 200 -25C 100 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -3 -10 - 0.03 - 0.01 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) Collector current IC (A) fT IE 200 180 VCB = -10 V Ta = 25C 60 Cob VCB Collector to emitter voltage VCER (V) Collector output capacitance Cob (pF) IE = 0 f = 1 MHz Ta = 25C VCER RBE -120 IC = -10 mA Ta = 25C Transition frequency fT (MHz) 160 140 120 100 80 60 40 20 0 1 2 3 5 10 20 30 50 100 50 -100 40 -80 30 -60 20 -40 10 -20 0 -1 -3 -10 -30 -100 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) Collector to base voltage VCB (V) Base to emitter resistance RBE (k) 2 Transistors ICEO Ta 104 VCE = -10 V -10 -3 2SB1322A Area of safe operation (ASO) Single pulse Ta = 25C ICP IC t=1s t = 10 ms Collector current IC (A) 103 -1 - 0.3 - 0.1 ICEO (Ta) ICEO (Ta = 25C) 102 - 0.03 - 0.01 10 - 0.003 1 0 20 40 60 80 100 120 140 160 - 0.001 - 0.1 - 0.3 -1 -3 -10 -30 -100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) 3 |
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