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| DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3545 UHF OSCILLATOR AND MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD DESCRIPTION The 2SC3545 is an NPN silicon epitaxial transistor intended for use as UHF oscillator and mixer in a tuner of a TV receiver. The device features stable oscillation and small frequency drift against any change of the supply voltage and the ambient temperature. It is designed for use in small type equipments especially recommended for Hybrid Integrated Circuit and other applications. PACKAGE DIMENSIONS (Units: mm) 2.80.2 0.4 -0.05 +0.1 1.5 0.65 -0.15 +0.1 0.95 0.95 FEATURES * High Gain Bandwidth Procuct; fT = 2 000 MHz TYP. * Low Collector to Base Time Constant; CC rb'b = 4 ps TYP. * Low Feedback Capacitance; Cre = 0.48 pF TYP. 2.90.2 2 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Maximum Voltages and Current Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Maximum Power Dissipation Total Power Dissipation Maximum Temperature Junction Temperature Storage Temperature 0.3 Marking PT Tj Tstg 150 125 to +125 mW C C PIN CONNECTIONS 1. Emitter 2. Base 3. Collector 65 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current DC Current Gain Collector Saturation Voltage Gain Bandwidth Product Output Capacitance Collector to Base Time Constant SYMBOL ICBO hFE VCE(sat) fT Cob CC rb'b 1.3 2.0 0.48 4 1.0 10 50 100 MIN. TYP. MAX. 0.1 250 0.5 V MHz pF ps UNIT TEST CONDITIONS VCB = 12 V, IE = 0 VCE = 10 V, IC = 5.0 mA IC = 10 mA, IB = 1.0 mA VCE = 10 V, IE = 5.0 mA VCB = 10 V, IE = 0, f = 1.0 MHz VCE = 10 V, IE = 5.0 mA, f = 31.9 MHz A hFE Classification Class Marking hFE M/P * T42 50 to 100 L/Q * T43 70 to 140 K/R * T44 120 to 250 * Old Specification / New Specification Document No. P10358EJ2V1DS00 (2nd edition) Date Published March 1997 N Printed in Japan 0 to 0.1 VCBO VCEO VEBO IC 30 15 3.0 50 V V V mA 1.1 to 1.4 (c) 0.16 -0.06 +0.1 0.4 -0.05 +0.1 1 3 1984 2SC3545 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 PT-Total Power Dissipation-W TYPICAL DEVICE CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 3 f = 1.0 MHz Cre-Feed-back Capacitance-pF Free air 250 200 150 100 50 2 1 0.7 0.5 0.3 0.2 0 25 50 75 100 125 0.1 1 2 3 5 7 10 VCB-Collector to Base Voltage-V 20 30 TA-Ambient Temperature-C DC CURRENT GAIN vs. COLLECTOR CURRENT 200 VCE = 10 V Gmax-Maximum Available Gain-dB |S21e|2-Insertion Gain-dB INSERTION GAIN, MAXIMUM AVAILABLE GAIN vs. COLLECTOR CURRENT 15 VCE = 10 V f = 1.0 GHz MAG 10 hFE-DC Current Gain 100 50 |S21e|2 5 20 10 0.5 1 5 10 50 0 0.5 1 5 10 50 70 IC-Collector Current-mA GAIN BANDWIDTH PROUDCT vs. COLLECTOR CURRENT CC.rb'b-Collector to Base Time Constant-ps IC-Collector Current-mA COLLECTOR TO BASE TIME CONSTANT vs. COLLECTOR CURRENT 15 10 fT-Gain Bandwidth Product-MHz 5.0 3.0 2.0 1.0 0.5 0.3 0.2 VCE = 10 V 0.1 0.1 0.5 1.0 5.0 10 30 10 5 VCE = 10 V f = 31.9 MHz 0 0.5 1 5 10 50 70 IC-Collector Current-mA IC-Collector Current-mA 2 2SC3545 S-PARAMETER VCE = 10 V, IC = 5 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 S11 0.472 0.310 0.261 0.262 0.270 0.288 0.323 0.356 S11 80.6 117.3 139.9 160.4 176.6 172.3 162.4 151.0 S21 7.581 4.029 2.926 2.118 1.860 1.504 1.413 1.201 S21 114.1 92.9 81.7 70.2 62.8 54.4 47.9 40.9 S12 0.037 0.055 0.077 0.098 0.108 0.125 0.148 0.160 S12 60.2 55.5 60.2 62.8 64.6 65.7 66.4 68.0 S22 0.780 0.723 0.721 0.698 0.691 0.688 0.664 0.658 S22 8.2 15.1 18.8 22.6 25.1 30.7 35.1 39.3 VCE = 10 V, IC = 10 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 S11 0.323 0.246 0.247 0.273 0.299 0.314 0.353 0.380 S11 101.4 136.2 158.8 173.7 172.6 162.7 154.5 144.7 S21 8.735 4.383 3.120 2.259 1.968 1.589 1.483 1.257 S21 104.9 87.4 78.0 67.2 60.1 52.5 46.3 39.5 S12 0.037 0.052 0.074 0.086 0.102 0.126 0.146 0.166 S12 49.5 65.2 67.3 68.2 69.4 70.1 70.4 70.3 S22 0.711 0.693 0.696 0.679 0.671 0.663 0.648 0.648 S22 8.5 13.8 16.8 20.0 23.8 26.6 33.7 38.5 3 2SC3545 S-PARAMETER S11e, S22e-FREQUENCY 0.10 0.40 110 0.7 CONDITION 0.11 0.39 100 0.9 0.8 VCE = 10 V, 200 MHz Step 0.14 0.36 0.12 0.38 0.13 0.37 0.6 0. THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 3 RA 0.4 0.02 D LOAD TION COEF WAR FLEC FCIENT 0.4 0.0TOR 6 IN DE 7 .03THS TO GLE OF RE 0G 4 GRE AN 0.4 0.4 ES LEN-160 0 4E 6 0 .0 0.0 AV 5 W 15 0.4 5 0.4 5 50 0 -1 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C 0. 5 07 43 0. 0 13 0.4 1.6 12 0 1.4 2 1.2 0 .08 1.0 9 0.0 1 0.4 90 80 0.15 0.35 70 0.1 6 0.3 4 6 00 1.8 0.1 0.3 7 3 0.2 0. 2.0 50 0. 18 32 19 0. 31 0. ( -Z-+-J-XTANCE CO ) MPO N T EN 0.4 0 0.2 0 0.3 40 O WAVELEN G 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.4 1.6 1.8 2.0 3.0 4.0 5.0 10 20 0.1 S11e 0.4 0.6 10 0 0.2 0. 8 ) E NC TA X - AC -J -O RE --Z 0.3 4 0. E IV AT 0. 5 2.0 0.6 1.8 1.6 0.7 0.8 0.9 1.2 S21e-FREQUENCY CONDITION 90 VCE = 10 V, 200 MHz Step S12e-FREQUENCY 120 0.2 GHz 60 150 30 150 S12e S21e 1.6 GHz 180 0 2 4 6 8 0 180 10 0 0.2 GHz 0.05 0.1 0.15 0 0.2 0.25 -150 IC = 5 mA IC = 10 mA -30 -150 -120 -90 -60 4 4 0.3 6 0.1 0.35 0.15 -70 1.0 1.4 120 1.6 GHz IC = 5 mA IC = 10 mA -120 -90 3. 0 IC = 5 mA IC = 10 mA 0.8 0.6 ( 1.6 GHz 0 CONDITION 90 5.0 0.2 GHz 1.0 S22e 4.0 1. 20 50 REACTANCE COMPONENT R ---- 0.2 ZO ( ) 0. 32 18 0. -5 0 3 0.3 7 0.1 -6 0 0.36 0.14 -80 0.6 1.6 GHz 0.4 0 1. 0.8 0.37 0.13 0.4 0.2 0.2 -90 0.38 0.39 0.12 0.11 -100 0.40 0.10 -11 0 0.4 1 0.0 0.4 9 02 -1 .08 20 NE G -1 0. 4 0. 3 07 30 0. 4 0.6 3. 0.8 0 1 0.2 9 0.2 30 0.3 4.0 1.0 6.0 0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20 0.2 10 0.1 20 50 0.25 0.25 0 0.2 GHz 0.26 0.24 -10 0.27 0.23 0.2 8 0.2 2 -20 0 .29 0.2 1 0.3 -3 0.2 0 0 0 -4 0. 0. 31 19 VCE = 10 V, 200 MHz Step 60 30 -30 -60 2SC3545 [MEMO] 5 2SC3545 [MEMO] 6 2SC3545 [MEMO] 7 2SC3545 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 |
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