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CM600HA-24A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Single IGBTMODTM A-Series Module 600 Amperes/1200 Volts H J K G F E D W - DIA. (4 TYP.) y E PQ E G x C N M L C B A V -THD. (2 TYP.) U - THD. (2 TYP.) R T S Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor in a single configuration with a reverse connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking E E C G Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 4.25 3.66 0.63 0.30 0.69 1.14 0.79 0.94 0.31 0.24 2.44 1.89 Millimeters 108.0 93.0 16.0 7.5 30C0686.eps 17.5 29.0 20.0 24.0 7.9 6.0 62.0 48.0 Dimensions N P Q R S T U V W X Y Inches 0.39 0.39 0.51 0.33 1.42 1.02 M6 Metric M4 Metric 0.256 0.79 0.35 Millimeters 10.0 10.0 13.0 8.5 36.0 25.8 M6 M4 6.5 20.0 9.0 Applications: DC Chopper Inverter UPS Forklift Ordering Information: Example: Select the complete part module number you desire from the table below i.e. CM600HA-24A is a 1200V (VCES), 600 Ampere Single IGBTMODTM Power Module. Type CM Current Rating Amperes 600 VCES Volts (x 50) 24 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24A Single IGBTMODTM A-Series Module 600 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E Short) Gate-Emitter Voltage (C-E Short) Collector Current (DC, TC = 80C*) Peak Collector Current Emitter Current*** (TC = 25C) Peak Emitter Current*** Maximum Collector Dissipation (TC = 25C*, Tj 150C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 G(E) Terminal Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC -- -- -- -- VISO CM600HA-24A -40 to 150 -40 to 125 1200 20 600 1200** 600 1200** 3670 40 40 15 480 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 60mA, VCE = 10V IC = 600A, VGE = 15V, Tj = 25C IC = 600A, VGE = 15V, Tj = 125C VCC = 600V, IC = 600A, VGE = 15V IE = 600A, VGE = 0V Min. -- -- 6.0 -- -- -- -- Typ. -- -- 7.0 2.1 2.4 3000 -- Max. 1.0 0.5 8.0 3.0 -- -- 3.8 Units mA A Volts Volts Volts nC Volts Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 600A, VGE1 = VGE2 = 15V, RG = 0.52, Inductive Load Switching Operation, IE = 600A VCE = 10V, VGE = 0V Test Conditions Min. -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- -- -- -- -- 19.0 Max. 105 9 2.0 660 190 700 350 250 -- Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time*** Diode Reverse Recovery Charge*** *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24A Single IGBTMODTM A-Series Module 600 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Thermal Resistance, Junction to Case* Thermal Resistance, Junction to Case* Contact Thermal Resistance External Gate Resistance *TC, Tf measured point is just under the chips. Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) RG Test Conditions Per IGBT Per FWDi Thermal Grease Applied Min. -- -- -- 0.52 Typ. -- -- 0.02 -- Max. 0.034 0.053 -- 7.8 Units C/W C/W C/W OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1200 COLLECTOR CURRENT, IC, (AMPERES) 15 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) VGE = 20V 13 Tj = 25oC 12 4 10 VGE = 15V Tj = 25C Tj = 125C Tj = 25C IC = 1200A 900 3 8 6 4 2 0 IC = 240A 600 11 2 IC = 600A 300 10 1 9 0 0 2 4 6 8 10 0 0 300 600 900 1200 6 8 10 12 14 16 18 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 103 103 td(off) tf td(on) 103 SWITCHING TIME, (ns) 102 Cies 101 Coes Cres VGE = 0V 102 tr VCC = 600V VGE = 15V RG = 0.52 Tj = 125C Inductive Load 102 Tj = 25C Tj = 125C 100 101 0 1 2 3 4 5 10-1 10-1 100 101 102 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM600HA-24A Single IGBTMODTM A-Series Module 600 Amperes/1200 Volts REVERSE RECOVERY CHARACTERISTICS (TYPICAL) GATE CHARGE VS. VGE SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) 103 REVERSE RECOVERY, Irr, trr, (ns) GATE-EMITTER VOLTAGE, VGE, (VOLTS) VCC = 400V VCC = 600V SWITCHING LOSS, (mJ/PULSE) VCC = 600V VGE = 15V RG = 0.52 Tj = 25C Inductive Load 20 16 12 8 4 0 IC = 600A 102 Eoff Err 102 101 Eon VCC = 600V VGE = 15V RG = 0.52 Tj = 125C Inductive Load Irr trr 101 101 102 EMITTER CURRENT, IE, (AMPERES) 103 0 900 1800 2700 3600 4500 100 101 GATE CHARGE, QG, (nC) COLLECTOR CURRENT, IC, (AMPERES) EMITTER CURRENT, IE, (AMPERES) 102 103 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c') Zth = Rth * (NORMALIZED VALUE) SWITCHING LOSS VS. GATE RESISTANCE (TYPICAL) 103 SWITCHING LOSS, (mJ/PULSE) VCC = 600V VGE = 15V IC = 600A Tj = 125C Inductive Load 100 10-3 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 10-2 10-1 100 101 Eon 10-1 102 Eoff 10-2 Err Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.034C/W (IGBT) Rth(j-c) = 0.051C/W (FWDi) 10-1 10-2 101 0 2 GATE RESISTANCE, RG, () 4 6 8 10 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 |
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