 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CYStech Electronics Corp. High -speed double diode Spec. No. : C303S3P Issued Date : 2004.05.31 Revised Date Page No. : 1/4 DAP202S3 Description The DAP202S3 consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in a small SOT-323 plastic SMD package. Equivalent Circuit DAP202S3 2 1 Outline SOT-323 Common Anode 1Cathode 2Cathode 3Common Anode 3 Cathode Cathode Features * Small plastic SMD package * High switching speed: max. 4ns * Continuous reverse voltage: max. 75V * Repetitive peak reverse voltage: max. 85V * Repetitive peak forward current: max. 450mA. Applications * High-speed switching in thick and thin-film circuits. DAP202S3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings @TA=25 Parameters Repetitive peak reverse voltage Continuous reverse voltage Continuous forward current(single diode loaded) Continuous forward current(double diode loaded) Repetitive peak forward current Non-repetitive peak forward current @square wave, Tj=125 prior to surge t=1s t=1ms t=1s Total power dissipation(Note 1) Junction Temperature Storage Temperature Note 1: Device mounted on an FR-4 PCB. Spec. No. : C303S3P Issued Date : 2004.05.31 Revised Date Page No. : 2/4 Symbol VRRM VR IF IFRM IFSM Ptot Tj Tstg Min -65 Max 85 75 215 125 450 4 1 0.5 200 150 +150 Unit V V mA mA A A A mW C C Electrical Characteristics @ Tj=25 unless otherwise specified Parameters Forward voltage Symbol VF Conditions IF=1mA IF=10mA IF=50mA IF=150mA VR=25V VR=75V VR=25V,Tj=150 VR=75V,Tj=150 VR=0V, f=1MHz when switched from IF=10mA to IR=10mA,RL=100, measured at IR=1mA when switched from IF=10mA tr=20ns Min Typ. Max 715 855 1 1.25 30 1 30 50 2 4 1.75 Unit mV mV V V nA A A A pF ns V Reverse current Diode capacitance Reverse recovery time Forward recovery voltage IR Cd trr Vfr - - Thermal Characteristics Symbol Rth, j-a Parameter thermal resistance from junction to ambient Conditions Note 1 Value 625 Unit /W Note 1: Device mounted on a FR-4 PCB. DAP202S3 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Current vs Ambient Temperature 250 225 275 Forward Current---IF(mA) 250 225 200 175 150 125 100 75 50 25 0 0 50 100 150 200 0 0.2 Spec. No. : C303S3P Issued Date : 2004.05.31 Revised Date Page No. : 3/4 Forward Current vs Forward Voltage Forward Current---IF(mA) 200 175 150 125 100 75 50 25 0 single diode loaded double diode loaded Ambient Temperature---Ta() Non-repetitive peak forward current vs pulse duration 100 Non-repetitive peak forward current---IFSM(A) 0.7 0.4 0.6 0.8 1 Forward Voltage---VF(V) 1.2 1.4 Diode Capacitance vs Reverse Voltage Diode Capacitance---CD(pF) 1 10 100 1000 10000 0.6 0.5 0.4 0.3 0.2 0.1 0 0 2 4 6 8 10 12 14 16 10 1 0.1 Pulse Duration---tp(s) Reverse Voltage---VR(V) DAP202S3 CYStek Product Specification CYStech Electronics Corp. SOT-323 Dimension Spec. No. : C303S3P Issued Date : 2004.05.31 Revised Date Page No. : 4/4 3 A Marking: A1 Q Lp detail Z W B C 1 e1 e D bp 2 TE A1 E A Z He 0 1 scale 2 mm 3-Lead SOT-323 Plastic Surface Mounted Package CYStek Package Code: S3 v A Style : Pin 1. Cathode 2.Cathode 3. Common Anode *: Typical DIM A A1 bp C D E e Inches Min. Max. 0.0315 0.0433 0.0000 0.0039 0.0118 0.0157 0.0039 0.0098 0.0709 0.0866 0.0453 0.0531 0.0512 - Millimeters Min. Max. 0.80 1.10 0.00 0.10 0.30 0.40 0.10 0.25 1.80 2.20 1.15 1.35 1.3 - DIM e1 He Lp Q v w Inches Min. Max. 0.0256 0.0787 0.0886 0.0059 0.0177 0.0051 0.0091 0.0079 0.0079 - Millimeters Min. Max. 0.65 2.00 2.25 0.15 0.45 0.13 0.23 0.2 0.2 10 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: * Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DAP202S3 CYStek Product Specification |
Price & Availability of DAP202S3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |