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| MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H * * * * * IC Collector current .......................... 50A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 94 (7) 23 10.5 13 10.5 23 80 23 6.5 B2 E2 (7) B2 E2 C1 C2E1 E2 34 C2E1 E2 C1 12 E1 B1 E1 B1 Tab#110, t=0.5 6.5 M5 31 LABEL (8) 22.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 50 50 400 3 500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=50A, IB=1A -IC=50A (diode forward voltage) IC=50A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=50A, IB1=-IB2=1A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 2.5 3.5 1.8 -- 2.5 15 3.0 0.31 1.2 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 100 Tj=25C COLLECTOR CURRENT IC (A) 80 IB=2.0A IB=1.0A IB=0.5A 60 IB=0.3A 40 IB=0.1A DC CURRENT GAIN hFE 2 VCE=5.0V 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=2.8V 20 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1.0 2.0 3.0 4.0 5.0 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.6 2.0 2.4 2.8 3.2 VBE (V) 3.6 VCE=2.8V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE 10 0 VCE(sat) 7 5 4 3 IB=1.0A 2 Tj=25C Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5.0 ton, ts, tf (s) IC=30A IC=50A SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 2 10 1 7 5 4 3 2 4.0 IC=20A ts VCC=600V IB1=-IB2=1A 3.0 tf ton 2.0 SWITCHING TIME 1.0 Tj=25C Tj=125C 0 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 0 7 5 4 3 2 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 IC (A) COLLECTOR CURRENT BASE CURRENT IB (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 REVERSE BIAS SAFE OPERATING AREA 160 ts, tf (s) ts SWITCHING TIME 10 1 7 5 4 3 2 10 0 COLLECTOR CURRENT IC (A) 2 Tj=125C 140 120 100 80 60 40 20 0 0 200 400 600 800 1000 IB2=-3A IB2=-1A tf VCC=600V IB1=1A 7 IC=50A Tj=25C 5 4 Tj=125C 3 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 TC=25C NON-REPETITIVE 50S 1mS DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA DC 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 7 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 0.3 0.2 0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr 10 2 Tj=25C Tj=125C VCC=600V IB1=-IB2=1A 10 1 trr (s) FORWARD CURRENT IF (A) Feb.1999 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Qrr 10 0 10 0 7 5 3 2 trr 10 -1 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 TIME (s) |
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