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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
* * * * * * * * * * * * * * *
Medium-Resolution, Solid-State Image Sensor for Low-Cost B/W TV Applications 324(H) x 243(V) Active Elements in Image-Sensing Area 10-m Square Pixels Small Size Low Cost Fast Clear Capability Electronic-Shutter Function From 1/60-1/50000 s Low Dark Current Electron-Hole Recombination Antiblooming Dynamic Range . . . 66 dB Typical High Sensitivity High Blue Response 8-Pin Dual-In-Line Ceramic Package 4-mm Image-Area Diagonal Solid-State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics
DUAL-IN-LINE PACKAGE (TOP VIEW) IAG2 ADB 1 2 8 7 ABG IAG1
SUB
3 4
6 5
SAG
OUT
SRG
description
The TC255 is a frame-transfer charge-coupled device (CCD) designed for use in B/W NTSC TV and special-purpose applications where low cost and small size are desired. The image-sensing area of the TC255 is configured in 243 lines with 336 elements in each line. Twelve elements are provided in each line for dark reference. The blooming-protection feature of the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, an integral part of each image-sensing element. The sensor can be operated in a noninterlace mode as a 324(H) by 243(V) sensor with very low dark current. The device can also be operated in an interlace mode, electronically displacing the image-sensing elements during the charge integration in alternate fields, effectively increasing vertical resolution and minimizing aliasing. One important aspect of this image sensor is its high-speed image-transfer capability. This capability allows for an electronic-shutter function comparable to interline-transfer and frame-interline-transfer sensors without the loss of sensitivity and resolution inherent in those technologies. The charge is converted to signal voltage with a 12-V per-electron conversion factor by a high-performance charge-detection structure with built-in automatic reset and a voltage-reference generator. The signal is buffered by a low-noise two-stage source-follower amplifier to provide high output-drive capability. The TC255 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC255 is characterized for operation from -10C to 45C.
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright (c) 1994, Texas Instruments Incorporated
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
functional block diagram
8 7
Image Area With Blooming Protection IAG2 1 Dark Reference Elements
ABG IAG1
ADB
2 Clear Line
2 Dummy Elements Amplifier 4 OUT
Storage Area
6
SAG
Serial Register 5 SRG
SUB
3
2
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Clear Drain
TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
sensor topology diagram
324 Active Pixels 12
Buffer Column
243 Lines
Effective Imaging Area
1 Dark Line 1 Clear Line
244 Lines
Storage Area
336 Pixels Dummy Pixels 2 12 Optical Black (OPB) 324 Active Pixels 1 Dummy Pixel
Terminal Functions
TERMINAL NAME ABG ADB SUB IAG1 IAG2 OUT SAG SRG NO. 8 2 3 7 1 4 6 5 I I O I I I/O I I DESCRIPTION Antiblooming gate Supply voltage for amplifier-drain bias Substrate Image-area gate 1 Image-area gate 2 Output Storage-area gate Serial-register gate
detailed description
The TC255 consists of five basic functional blocks: 1) the image-sensing area, 2) the clear line, 3) the storage area, 4) the serial register, and 5) the charge-detection node and output amplifier.
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
image-sensing area
Cross sections with potential-well diagrams and top views of image-sensing and storage-area elements are shown in Figure 1 and Figure 2. As light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. During this time, the antiblooming gate is activated by the application of a burst of pulses every horizontal blanking interval. This prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. To generate the dark reference that is necessary in subsequent video-processing circuits for restoration of the video black level there are 12 columns of elements on the left edge of the image-sensing area that are shielded from light. There is also one column of elements on the right side of the image-sensing area and one line between the image-sensing area and the image-clearing line.
10 m Clocked Barrier IAG Virtual Barrier Antiblooming Gate Virtual Well Antiblooming Clocking Levels ABG Light
10 m
Clocked Well Accumulated Charge
Figure 1. Charge-Accumulation Process
SAG Clocked Phase
Virtual Phase
Channel Stops
Figure 2. Charge-Transfer Process
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
image-clear line
During start-up or electronic-shutter operations, it is necessary to clear the image area of charge without transferring it to the storage area. In such situations, the two image-area gates are clocked 244 times without clocking the storage-area gate. The charge in the image area is then cleared through the image-clear line.
storage area
After exposure, the image-area charge packets are transferred through the image-clear line to the storage area. The stored charge is then transferred line by line into the serial register for readout. Figure 3 illustrates the timing to 1) transfer the image to the storage area and 2) to transfer each line from the storage area to the serial register.
serial register
After each line is clocked into the serial register, it is read out pixel by pixel. Figure 3 illustrates the serial-register clock sequence.
244 Cycles Composite Blank
ABG 244 Cycles IAG1
IAG2
SAG 339 Cycles SRG
SAG 1) SRG IAG2 1) End of serial readout of line 2) Transfer of new line to serial register 3) Beginning of readout of new line 2) 3) IAG1
t = 80 ns
SAG
SRG
Expanded Section of Parallel Transfer
Figure 3. Timing Diagram
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
charge-detection node and output amplifier
The buffer amplifier converts charge into a video signal. Figure 4 shows the circuit diagram of the charge-detection node and output amplifier. As charge is transferred into the detection node, the potential of this node changes in proportion to the amount of signal received. This change is sensed by an MOS transistor and, after proper buffering, the signal is supplied to the output terminal of the image sensor. After the potential change is sensed, the node is reset to a reference voltage supplied by an on-chip reference generator. The reset is accomplished by a reset gate that is connected internally to the serial register. The detection node and buffer amplifier are located a short distance away from the edge of the storage area; therefore, two dummy cells are used to span this distance.
Reference Generator Q0 ADB
Q2 Q1
Q3 QR SRG Detection Node Q4 Q6 VO Q5
Figure 4. Output Amplifier and Charge-Detection Node
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
spurious nonuniformity specification
The spurious nonuniformity specification of the TC255 is based on several sensor characteristics:
* *
Amplitude of the nonuniform pixel Polarity of the nonuniform pixel - - Black White
*
Column amplitude
The CCD sensor is characterized in both an illuminated condition and a dark condition. In the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in Figure 5. In the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in Figure 6. The specification for the TC255 is as follows:
WHITE SPOT (DARK) WHITE SPOT (ILLUMINATED) COLUMN (DARK) COLUMN (ILLUMINATED) BLACK SPOT (ILLUMINATED) x < 15% WHITE/BLACK PAIR x < 9mV
x < 15 mV x < 15% x < 0.5 mV x < 1 mV A white/black pair nonuniformity is no more than 2 pixels even for integration times of 1/60 second.
The conditions under which this specification is defined are as follows: 1. The integration time is 1/60 second except for illuminated white spots, illuminated black spots and white/black pair nonuniformities; in these three cases the integration time is 1/240 second. 2. The temperature is 45C. 3. The CCD video-output signal is 60 mV 10 mV.
mV
Amplitude
% of Total Illumination
t
t
Figure 5. Pixel Nonuniformity, Dark Condition
Figure 6. Pixel Nonuniformity, Illuminated Condition
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage range for ADB (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 15 V Input voltage range for ABG, IAG1, IAG2, SAG, SRG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 15 V to 15 V Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -10C to 45C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 30C to 85C
Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTE 1: All voltages are with respect to the substrate terminal.
recommended operating conditions
MIN Supply voltage, ADB Substrate bias voltage IAG1, IAG1 IAG2 SAG Input voltage, VI SRG High Low High Low High Low High ABG ABG Clock frequency, fclock frequency l k IAG1, IAG2 SAG SRG Capacitive load Operating free-air temperature, TA Adjustment is required for optimum performance. OUT -10 6.25 Intermediate Low -8 1.5 -10.5 1.5 -10.5 1.5 -10.5 3.5 11 NOM 12 0 2 -10 2 -10 2 -10 4 - 2.5 -7 6.25 2.5 - 9.5 2.5 - 9.5 2.5 - 9.5 4.5 -6 12.5 25 12.5 12.5 6 45 pF C MHz V MAX 13 UNIT V V
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
electrical characteristics over recommended operating range of supply voltage,TA = -10C to 45C
PARAMETER Dynamic range (see Note 2) Charge conversion factor Charge-transfer efficiency (see Note 4) Signal-response delay time, (see Note 5) Gamma (see Note 6) Output resistance Noise equivalent signal without correlated double sampling Noise-equivalent signal with correlated double sampling (see Note 7) ADB (see Note 8) Rejection ratio Supply current IAG 1, 2 Input capacitance, Ci capacitance SRG ABG SAG SRG (see Note 9) ABG (see Note 10) 13 0.97 Antiblooming disabled (see Note 3) 11 MIN TYP 66 12 0.9995 20 0.98 350 62 31 15 50 40 5 1000 22 850 2000 pF 10 mA 18 dB 0.99 electrons electrons 13 0.99999 ns MAX UNIT dB V/e
NOTES: 2. Dynamic range is -20 times the logarithm of the mean-noise signal divided by saturation output signal. 3. For this test, the antiblooming gate must be biased at the intermediate level. 4. Charge-transfer efficiency is one minus the charge loss per transfer in the output register. The test is performed in the dark using an electrical input signal. 5. Signal-response delay time is the time between the falling edge of the SRG pulse and the output signal valid state. 6. Gamma () is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation). Exposure (2) Exposure (1)
g
+
Output signal (2) Output signal (1)
7. A triple-level serial gate clock is necessary to implement correlated double sampling. 8. ADB rejection ratio is -20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ADB. See Figure 11 for measured ADB rejection ratio as a function of frequency. 9. SRG rejection ratio is -20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at SRG. 10. ABG rejection ratio is -20 times the logarithm of the ac amplitude at the output divided by the ac amplitude at ABG.
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
optical characteristics, TA = 40C, integration time = 16.67 ms (unless otherwise noted)
PARAMETER Sensitivity Saturation signal, Vsat (see Note 11) Maximum usable signal, Vuse Blooming overload ratio (see Note 12) Image-area well capacity Smear (see Notes 13 and 14) Dark current Dark signal Pixel uniformity Column uniformity Shading Electronic-shutter capability 1/15000 Output signal = 60 mV 10 mV Output signal = 60 mV 10 mV Interlace disabled, TA = 21C No IR filter With IR filter Antiblooming disabled, Interlace off Antiblooming enabled 600 200 100 50000 MIN TYP 350 45 750 250 200 62500 0.00012 0.20 200 15 0.5 15 1/60 nA/cm2 V mV mV % s electrons MAX UNIT mV/lx mV mV
NOTES: 11. Saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 12. Blooming is the condition in which charge is induced in an element by light incident on another element. Blooming overload ratio is the ratio of blooming exposure to saturation exposure. 13. Smear is a measure of the error introduced by transferring charge through an illuminated pixel in shutterless operation. It is equivalent to the ratio of the single-pixel transfer time to the exposure time using an illuminated section that is 1/10 of the image-area vertical height with recommended clock frequencies. 14. The exposure time is 16.67 ms, the fast-dump clocking rate during vertical transfer is 12.5 MHz, and the illuminated section is 1/10 of the height of the image section.
timing requirements
MIN ABG IAG1, 2 (fast clear) tr Rise time IAG1, 2 (image transfer) SAG SRG ABG IAG1, 2 (fast clear) tf Fall time IAG1, 2 (image transfer) SAG SRG 10 10 10 10 10 10 10 10 10 10 NOM 40 10 20 20 40 40 10 20 20 40 ns ns MAX UNIT
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
PARAMETER MEASUREMENT INFORMATION
VO Blooming Point With Antiblooming Disabled Blooming Point With Antiblooming Enabled Dependent on Well Capacity
Vsat (min)
Vuse (max)
Level Dependent Upon Antiblooming Gate High Level
Vuse (typ) DR Vn Lux (light input)
DR (dynamic range)
+ camera white clip voltage V
n
Vn = noise floor voltage Vsat (min) = minimum saturation voltage Vuse (max) = maximum usable voltage Vuse (typ) = typical user voltage (camera white clip) NOTES: A. Vuse (typ) is defined as the voltage determined to equal the camera white clip. This voltage must be less than Vuse (max). B. A system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. By lowering the Vuse (typ), the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera.
Figure 7. Vsat, Vuse Relationship
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
PARAMETER MEASUREMENT INFORMATION
1.5 V to 2.5 V SRG - 8.5 V - 8.5 V to - 10 V
0% OUT
90% 100%
CCD Delay Sample and Hold
t
10 ns
15 ns
Figure 8. SRG and CCD Output Waveforms
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
TYPICAL CHARACTERISTICS
CCD SPECTRAL RESPONSIVITY 1
Responsivity - A / W
0.1
0.01
0.001 300 400 500 600 700 800 900 1000 Incident Wavelength - nm
Figure 9
CCD QUANTUM EFFICIENCY 1
Quantum Efficiency
0.1
0.01
0.001 300 400 500 600 700 800 900 1000 Incident Wavelength - nm
Figure 10
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
TYPICAL CHARACTERISTICS
20 18 16 ADB Rejection Ratio - dB 14 12 10 8 6 4 2 0 0 5 10 15 20 25 f - Frequency - MHz
Figure 11. Measured ADB Rejection Ratio as a Function of Frequency
300
Power Spectral Density - nV/rt Hz
250
200
150
100
50
0 0 5 10 15 20 25 f - Frequency - MHz
Figure 12. Noise Power Spectral Density
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
APPLICATION INFORMATION
VCC WIN 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 EFSEL3 EFSEL2 EFSEL1 VCC MINSEL WSEL2 WSEL1 TEST3 TEST2 WINDOW TEST1 MON4 MON3 MON2 MON1 GND VAB VCC 1 2 3 4 5 6 7 8 9 10 11 12 TMC57253 VAB VCC GND EN ABIN VABM ABOUT VABL GND IA1OUT 24 23 22 21 20 19 18 17 16 15 14 13 VABM
ED EU CBLK CSYNC CPOB1
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
ED EU TEST4 CBLK CSYNC GND CPOB1 CPOB2 SSEL1 VCC SSEL2 SSEL3 VR HR
DSSEL FSSEL ABGSEL ABG ABM VCC IAG1
64 63 62 61 60 59 VCC 58 57 56 55 54 53 52 51 50 49
VIA ABMIN IA1IN IA2OUT IA2IN SAIN SRIN GND SAOUT VS
VIA
VS VSM
SRMIN SROUT VSM GND
TMC57751
IAG2 SAG GND SRG SRM DLSEL PHSEL2 PHSEL1
VCC
SHTCOM SHTMON MAXSEL XSEL XOUT MCLK/4 CLKIN VACT SCAN CDS GND
SRGSEL PUC VCC XIN HD VD FI
33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 VCC SYNCLVL HICPLVL VCC CTRLVL WIDLVL SULVL CBLK Buffer and Preamp
S/H CDS VCC VCC +5 V GND OUT
S/H
TC255 8 ABG IAG2 7 ADB IAG1 6 SUB SAG 5 SRG OUT
1 2 ADB 3 SUB 4
ED
EU
4.7 F
VCC 44 43 42 41 40 39 38 37 36 35 34 VCC CENTER IRISFIL LOB WIDTH VREF HICPLVL SULVL SYNCLVL CBLK HIB 0.1 F 0.1 F
25 MHz
DC VOLTAGES VAB, VIA, VM, VS 12 V VCC 5V ADB 22 V SUB 10 V VABM 7.5 V HICPLVL SULVL SYNCLVL CTRLVL WIDLVL AMPTUNE 1.9 V 1.2 V 1.2 V 1.0 V 4.0 V 1.0 V
0.1 F
4.7 F
AMPTUNE
GAINSEL CHD
IRIS WINDOW
AMPOUT
GND AGCFB
HOBP
YIN
Low Pass Filter
DELAYIN
1 DATAIN 2 S/HFB 3 SHP S/H 4 SHD1 CDS 5 SHD2 6 GND 7 AGCFIL 8 AGCLVL 9 AGCMAX 10 AGCOUT 11 AMPIN
SN761210
33 100 F VCC 32 VIDEO 31 75 GND 30 CSYNC CSYNC 29 CPOB1 CLAMP 28 CHARAIN 27 VCC VCC 26 YHIN 25 APOUT 24 APGAIN 23 APFIL
0.1 F
12 13 14 15 16 17 18 19 20 21 22 AMPTUNE WIN CPOB1 0.1 F To Monitor
NOTE:
Decoupling capacitors are not shown.
Figure 13. Typical Application Circuit
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
APPLICATION INFORMATION
SUPPORT CIRCUITS DEVICE TMC57751LQFP TMC57253HSOP SN761210FR PACKAGE 64-pin flat pack 24-pin small outline package 44-pin flat pack APPLICATION Timing generator Driver Video processor FUNCTION EIA-170 timing and CCD control signals Driver for ABG, IAG1, IAG2, SAG, and SRG SYNC, BLANK, AGC, IRIS, CLAMP, S/H, CDS, and WINDOW
Figure 13. Typical Application Circuit (continued)
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TC255 336- x 244-PIXEL CCD IMAGE SENSOR
SOCS034C - FEBRUARY 1993 - REVISED NOVEMBER 1994
MECHANICAL DATA
The package for the TC255 consists of a ceramic base, a glass window, and an 8-lead frame. The glass window is sealed to the package by an epoxy adhesive. The package leads are configured in a dual-in-line organization and fit into mounting holes with 2,54 mm (0.1 inch) center-to-center spacings.
+0,05 (0.002) - 0,03 (0.001) 2,42 (0.095) 1,98 (0.078) 0,55 (0.022) 0,45 (0.018) 0,33 (0.130) 0,27 (0.011) 0,44 (0.017) 0,36 (0.014)
Package Center
0,25 (0.010)
9,4 (0.370) 9,0 (0.354) 3,81(0.15) 3,54 (0.139)
Optical Center 5,20 (0.205) 4,80 (0.189) Package Center 3,90 (0.154) 3,58 (0.141) 6,35 (0.250) 3,95 (0.234) 7,69 (0.303) 7,29 (0.287) 7,87 (0.310) 7,37 (0.290)
1,23 (0.048) 3,48 (0.137) 3,18 (0.125) 1,52 (0.060) 1,28 (0.054)
1,3 (0.051) 1,5 (0.059)
2,20 (0.087)
2,85 (0.112)
2,94 (0.116) MIN
1,01 (0.040) 0,51 (0.020)
30
0,46 (0.018)
2,54 (0.100) See Detail A DETAIL A
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTES: A. B. C. D. E. Single dimensions are nominal except where noted. The center of the package and the center of the image area are not coincident. The glass is 0.65 0.05 mm thick and has an index of refraction of 1.53. The distance from the top of the glass to the die is 1.47 0.14 mm. Maximum rotation of sensor within package is 1.
7/94
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IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER'S RISK. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI's publication of information regarding any third party's products or services does not constitute TI's approval, warranty or endorsement thereof.
Copyright (c) 1998, Texas Instruments Incorporated

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