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 TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032-D3908, FEBRUARY 1992
* * * *
AC Signal Input Gallium-Arsenide Diode Infrared Source Source Is Optically Coupled to Silicon N-P-N Phototransistor Choice of One, Two, or Four Channels
* * * *
Choice of Three Current-Transfer Ratios High-Voltage Electrical Isolation . . . 7.5 kV Peak (5.3 kV rms) Plastic Dual-In-Line Packages UL Listed - File No. E65085
description
These optocouplers consist of two gallium-arsenide light-emitting diodes connected in a reverse-parallel configuration for ac-input applications and a silicon n-p-n phototransistor per channel. The TIL920 has one channel in a 4-pin package, the TIL921 has two channels in an 8-pin package, and the TIL922 has four channels in a 16-pin package. The standard devices, TIL920, TIL921, and TIL922, are tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and 100% minimum are designated with the suffix A and B respectively.
mechanical data
4,80 (0.189) 4,19 (0.165) TIL920
1 10,2 (0.400) 9,2 (0.362) TIL921
1 21,1 (0.831) 18,5 (0.728) TIL922
C L
C L
1 7,62 (0.300) T.P. (see Note A) 6,76 (0.266) 6,25 (0.246) 3,81 (0.150) 3,30 (0.130)
2,79 (0.110) 2,29 (0.090) (see Note A) 5,08 (0.200) MAX
1,27 (0.050) 1,12 (0.044)
Seating Plane 105 90 0,36 (0.014) 0,20 (0.008) 3,81 (0.150) 2,54 (0.100) 0,51 (0.020) MIN 0,58 (0.023) 0,43 (0.017)
ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES NOTE A: Each pin centerline is located 0,25 (0.010) of its true longitudinal position.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright (c) 1992, Texas Instruments Incorporated
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
1
TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032-D3908, FEBRUARY 1992
schematic diagrams
TIL920 (TOP VIEW) A/K K/A 1 2 4 3 C E 1 A/K 1 K/A 2 A/K 2 K/A 1 2 3 4 TIL921 (TOP VIEW) 8 7 6 5 1C 1E 2C 2E 1A/K 1K/A 2A/K 2K/A 3A/K 3K/A 4A/K 4K/A 1 2 3 4 5 6 7 8 TIL922 (TOP VIEW) 16 15 14 13 12 11 10 9 1C 1E 2C 2E 3C 3E 4C 4E
absolute maximum ratings, TA = 25C (unless otherwise noted)
Input-to-output voltage (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.5 kV peak or dc ( 5.3 kV rms) Collector-emitter voltage (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35 V Emitter-collector voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Input diode continuous forward current at (or below) 25C free-air temperature (see Note 3) . . . . . 50 mA Continuous power dissipation at (or below) 25C free-air temperature: Phototransistor (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150 mW Input diode plus phototransistor per channel (see Note 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mW Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 100C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55C to 125C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C
This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements. This value applies when the base-emitter diode is open circuited. Derate linearly to 100C free-air temperature at the rate of 0.67 mA/C. Derate linearly to 100C free-air temperature at the rate of 2 mW/C. Derate linearly to 100C free-air temperature at the rate of 2.67 mW/C.
NOTES: 1. 2. 3. 4. 5.
electrical characteristics, TA = 25C (unless otherwise noted)
PARAMETER V(BR)CEO V(BR)ECO IC(off) CTR VF VCE(sat) Cio rio Collector-emitter breakdown voltage Emitter-collector breakdown voltage Off-state collector current Current transfer ratio TIL920, TIL921, TIL922 TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B IF = 20 mA IF = 5 mA, Vin-out = 0, Vin-out = 1 kV, IC = 1 mA f = 1 MHz, See Note 6 See Note 6 IF = 5 mA, VCE = 5 V TEST CONDITIONS IC = 0.5 mA, IC = 100 A, VCE = 24 V, IF = 0 IF = 0 IF = 0 20% 50% 100% 1.4 0.4 1 1011 V V pF MIN 35 7 100 TYP MAX UNIT V V nA
Input diode static forward voltage Collector-emitter saturation voltage Input-to-output capacitance Input-to-output internal resistance
IC(on)1 On-state collector current symmetry ratio VCE = 5 V, IF = 5 mA 1 3 IC(on)2 (see Note 7) These parameters apply to either direction of the input current. NOTES: 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together. 7. The higher of the two values of IC(on) generated by the two diodes is taken as IC(on)1.
2
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032-D3908, FEBRUARY 1992
switching characteristics, TA = 25C
PARAMETER tr tf Rise time Fall time TEST CONDITIONS VCC = 5 V, IC(on) = 2 mA, RL = 100 , See Figure 1 TYP 6 6 UNIT s
These parameters apply to either direction of the input current.
PARAMETER MEASUREMENT INFORMATION
Adjust amplitude of input pulse for IC(on) = 2 mA Input 0 Input (see Note A) Output (see Note B) + VCC = 5 V - 0 TEST CIRCUIT VOLTAGE WAVEFORMS 10% 10% 10% 10% RL = 100 tr tf tr tf
47
Output
90%
90%
90%
90%
NOTES: A. The input waveform is supplied by a generator with the following characteristics: Zo = 50 , tr 15 ns, duty cycle = 1%. B. The output waveform is monitored on an oscilloscope with the following characteristics: tr 12 ns, Ri 1 M, Ci 20 pF.
Figure 1. Switching Times
TYPICAL CHARACTERISTICS
INPUT CURRENT vs INPUT VOLTAGE
100 80 60 I F - Input Current - mA 40 20 0 - 20 - 40 - 60 - 80 - 100 -1.6 -1.2 - 0.8 - 0.4 0 0.4 0.8 1.2 1.6 TA = 25C
VF - Input Voltage - V
Figure 2
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
3
TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A TIL920B, TIL921B, TIL922B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS
SOOS032-D3908, FEBRUARY 1992
TYPICAL CHARACTERISTICS
COLLECTOR CURRENT vs COLLECTOR-EMITTER VOLTAGE
20 IF = 12 mA I C(on) - Normalized Collector Current 18 16 I C - Collector Current - mA 14 12 10 8 6 4 2 0 0 1 7 8 3 4 5 6 VCE - Collector-Emitter Voltage - V 2 9 10 IF = 2 mA IF = 5 mA IF = 8 mA IF = 10 mA TA = 25C 100 40 10 4 1 0.4 0.1 0.04 0.01 0.004 0.001 0.1
NORMALIZED ON-STATE COLLECTOR CURRENT vs INPUT-DIODE FORWARD CURRENT
VCE = 5 V Normalized to IF = 5 mA TA = 25C
0.4
1
4
10
40
100
IF - Input Current - mA
Figure 3
RELATIVE ON-STATE COLLECTOR CURRENT vs FREE-AIR TEMPERATURE
1.4 Collector Current Relative to Value at T = 25C A 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 -75 -50 75 -25 0 25 50 TA - Free-Air Temperature - C 100 VCE = 5 V IF = 5 mA
Figure 4
TYPICAL COLLECTOR-EMITTER SATURATION VOLTA vs FREE-AIR TEMPERATURE
VCE(sat) - Clooector-Emitter Saturation Voltage - V 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 -75 IF = 5 mA IC = 1 mA
-50
-25 0 25 50 75 TA - Free-Air Temperature - C
100
Figure 5
Figure 6
4
POST OFFICE BOX 655303
* DALLAS, TEXAS 75265
IMPORTANT NOTICE Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with TI's standard warranty. Testing and other quality control techniques are utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE ("CRITICAL APPLICATIONS"). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO BE FULLY AT THE CUSTOMER'S RISK. In order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of TI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. TI's publication of information regarding any third party's products or services does not constitute TI's approval, warranty or endorsement thereof.
Copyright (c) 1998, Texas Instruments Incorporated


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