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| Preliminary data SIPMOS(R) Power Transistor * N-Channel * SPB47N10L SPP47N10L Enhancement mode * Avalanche rated * Logic Level * dv/dt rated * 175C operating temperature Type SPB47N10L SPP47N10L Pin 1 G Pin 2 D Pin 3 S VDS ID RDS(on) 0.04 0.026 @ VGS Package Ordering Code 100 V 47 A P-TO263-3-2 Q67040-S4176 VGS = 4.5 V P-TO220-3-1 Q67040-S4177 VGS = 10 V Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current Symbol Value 47 Unit A 33 188 650 47 17.5 6 mJ A mJ kV/s ID TC = 25 C TC = 100 C Pulsed drain current TC = 25 C Avalanche energy, single pulse ID = 47 A, VDD = 25 V, RGS = 25 Avalanche current,periodic limited by jmax T Avalanche energy,periodic limited by j(max) T Reverse diode dv/dt IDpulse EAS IAR EAR dv/dt IS = 47 A, VDD V(BR)DSS , di/dt = 200 A/s, Tjmax = 175 C Gate source voltage Gate source peak voltage ,tp 100s Power dissipation VGS Vgs Ptot Tj Tstg 14 20 175 -55 ... +175 -55 ... +175 55/175/56 V W C TC = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 07 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) Symbol min. Values typ. 62.5 tbd tbd SPB47N10L SPP47N10L Unit max. 0.85 K/W RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) IDSS 100 1.2 1.6 2 V VGS = 0 V, ID = 0.25 mA Gate threshold voltage,VGS = VDS ID = 150 A Zero gate voltage drain current VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 150 C Gate-source leakage current VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 4.5 V, ID = 33 A VGS = 10 V, ID = 33 A A 0.1 10 1 100 100 nA 0.025 0.018 0.04 0.026 - IGSS RDS(on) 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 07 / 1998 Preliminary data Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance Symbol min. Values typ. 45 2000 375 210 50 SPB47N10L SPP47N10L Unit max. 2500 470 265 75 ns S pF gfs Ciss Coss Crss td(on) 30 - VDS2*ID*RDS(on)max , ID = 33 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2 Rise time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2 Turn-off delay time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2 Fall time VDD = 30 V, VGS = 4.5 V, ID = 47 A, RG = 2 tr - 100 150 td(off) - 50 75 tf - 70 105 Semiconductor Group 3 07 / 1998 Preliminary data SPB47N10L SPP47N10L Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold Symbol min. Values typ. 7 43 90 3.38 max. 11 65 135 nC V nC Unit QG(th) Qg(5) Qg V(plateau) - VDD = 80 V, ID0,1 A, VGS = 0 to 1 V Gate charge at Vgs=5V VDD = 80 V, ID = 47 A , VGS = 0 to 5 V Gate charge total VDD = 80 V, ID = 47 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, ID = 47 A Reverse Diode Inverse diode continuous forward current IS ISM VSD trr Qrr - 1.1 80 340 47 188 1.5 120 510 A T C = 25 C Inverse diode direct current,pulsed T C = 25 C Inverse diode forward voltage VGS = 0 V, IF = 94 A Reverse recovery time VR = 80 V, IF=IS , diF /dt = 100 A/s Reverse recovery charge VR = 80 V, IF=l S , diF/dt = 100 A/s V ns nC Semiconductor Group 4 07 / 1998 Preliminary data Power Dissipation Drain current SPB47N10L SPP47N10L Ptot = f (TC) SPB47N10L ID = f (TC) parameter: VGS 10 V SPB47N10L 180 W 50 A 40 Ptot 140 120 ID 35 30 100 25 80 20 60 40 20 0 0 15 10 5 0 0 20 40 60 80 100 120 140 C 180 20 40 60 80 100 120 140 C 180 TC TC Transient thermal impedance ZthJC = f (tp ) parameter: D = tp/T Semiconductor Group 5 07 / 1998 Preliminary data Typ. output characteristics Drain-source on-resistance SPB47N10L SPP47N10L I D = f (VDS) parameter: tp = 80 s SPB47N10L RDS(on) = f (Tj ) parameter : ID = 33 A, VGS = 4.5 V SPB47N10L 0.16 l ki g jh f VGS [V] e a 2.5 b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0 110 A Ptot = 175W 0.12 RDS(on) 0.10 90 ID 80 70 60 50 c d de f g h i j k 0.08 98% 0.06 40 30 20 10 a b l 0.04 typ 0.02 0 0.0 1.0 2.0 3.0 4.0 V 6.0 0.00 -60 -20 20 60 100 C 180 VDS Tj Semiconductor Group 6 07 / 1998 Preliminary data Typ. transfer characteristics ID= f ( VGS ) parameter: tp = 80 s Gate threshold voltage SPB47N10L SPP47N10L VGS(th) = f (Tj ) parameter : VGS = VDS , ID = 150 A 3.0 V VDS 2 x I D x R DS(on)max 60 A 50 2.4 ID 45 40 35 30 25 20 15 10 V GS(th) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 typ max 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.2 5.0 0.0 -60 -20 20 60 100 140 V min 200 V GS Tj Typ. capacitances Forward characteristics of reverse diode C = f(V DS) Parameter: V GS=0 V, f=1 MHz 10 4 IF = f (VSD) parameter: Tj , tp = 80 s SPB47N10L 10 3 A pF C IF Ciss 10 3 10 2 10 1 Coss Crss 10 2 0 10 0 0.0 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 5 10 15 20 25 30 V 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 V DS Semiconductor Group 7 VSD 07 / 1998 Preliminary data Avalanche Energy E AS = f (Tj) parameter: ID = 47 A,VDD = 25 V Typ. gate charge SPB47N10L SPP47N10L VGS = f (QGate) parameter: ID puls =47A SPB47N10L RGS = 25 700 mJ 16 V 600 EAS 550 500 450 400 350 300 250 200 VGS 12 10 8 0,2 VDS max 6 0,8 VDS max 4 150 100 50 0 20 40 60 80 100 120 140 C 2 180 0 0 20 40 60 80 100 Tj 140 nC QGate Drain-source breakdown voltage V(BR)DSS = f (Tj) SPB47N10L 120 V 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 0 20 40 60 80 100 120 140 C 180 Tj Semiconductor Group 8 07 / 1998 Preliminary data SPB47N10L SPP47N10L Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or ii d i d/ fh lif f h f il i i bl h h h lh f h Semiconductor Group 9 07 / 1998 |
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