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5-V Low-Drop Voltage Regulator
Preliminary Data Features * * * * * * * * Output voltage 5 V 2% Very low current consumption Power-on and undervoltage reset Reset low down to VQ = 1 V Very low-drop voltage Short-circuit-proof Reverse polarity proof Suitable for use in automotive electronics Ordering Code Q67006-A9354 Q67000-A9342 Package P-TO252-5-1 (SMD) P-TO263-5-1 (SMD) P-TO220-5-11 P-TO263-5-1 Functional Description The TLE 4275 is a monolithic integrated low-drop voltage regulator in a 5 pin TO-package. An input voltage up to 45 V is regulated to VQ = 5.0 V. The IC is able to drive loads up to 450 mA and is short-circuit proof. At over temperature the TLE 4275 is disabled by the incorporated temperature protection. A reset signal is generated for an output voltage VQ of typ. 4.65 V. The delay time can be programmed by the external delay capacitor.
TLE 4275
P-TO252-5-1 (D-PAK)
Type
w TLE 4275 D
w TLE 4275 G Q67006-A9343 w TLE 4275 w New type
P-TO220-5-11
Semiconductor Group
1
1998-11-01
TLE 4275
Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 in series with CI, the oscillating of input inductivity and input capacitance can be damped. The output capacitor CQ is necessary for the stability of the regulation circuit. Stability is guaranteed at values CQ 22 F and an ESR of 5 within the operating temperature range. Circuit Description The control amplifier compares a reference voltage to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any oversaturation of the power element. The IC also incorporates a number of internal circuits for protection against: * Overload * Over-temperature * Reverse polarity
Semiconductor Group
2
1998-11-01
TLE 4275
Pin Configuration (top view)
P-TO252-5-1 (D-PAK)
GND
P-TO220-5-11
1 RO DQ
5
AEP02580
P-TO263-5-1 (SMD)
D RQ GND Q
IEP02527
GND RQ D
Q
IEP02528
Figure 1 Pin Definitions and Functions Pin No. 1 2 3 4 5 Symbol Function I RQ GND D Q Input; block to ground directly at the IC with a ceramic capacitor. Reset Output; open collector output Ground; Pin 3 internally connected to heatsink Reset Delay; connected capacitor to GND for setting delay time Output; block to ground with a 22 F capacitor, ESR < 5 at 10 kHz.
3 1998-11-01
Semiconductor Group
TLE 4275
Temperature Sensor
Saturation Control and Protection Circuit Q Buffer
Bandgap Reference
D
Reset Generator
RQ GND
AEB02425
Figure 2 Block Diagram
Semiconductor Group
4
1998-11-01
TLE 4275
Absolute Maximum Ratings Tj = - 40 to 150 C Parameter Symbol Limit Values min. Voltage Regulator Input Voltage Current Output Voltage Current Reset Output Voltage Current Reset Delay Voltage Current Temperature Junction temperature Storage temperature max. Unit Test Condition
VI II
- 42 -
45 -
V
-
- Internally limited
VQ IQ
- 1.0 -
16 -
V -
- Internally limited
VRO IRO
- 0.3 -5
25 5
V mA
- -
VD ID
- 0.3 -2
7 2
V mA
- -
Tj Tstg
- - 50
150 150
C C
- -
Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit.
Semiconductor Group
5
1998-11-01
TLE 4275
Operating Range Parameter Input voltage Junction temperature Thermal Resistance Junction case Junction ambient Junction ambient Junction ambient
1) Soldered in, minimal footprint
Symbol
Limit Values min. max. 42 150 5.5 - 40
Unit Remarks
VI Tj
V
C
- -
Rthjc Rthja Rthja Rthja
- - - -
4 70 70 65
K/W - K/W TO263 K/W TO2521) K/W TO220
Characteristics VI = 13.5 V; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Symbol Limit Values min. Output Output voltage Output current limitation1) Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Current consumption; Iq = II - IQ Drop voltage1) Load regulation Line regulation typ. max. Unit Measuring Condition
VQ IQ Iq Iq Iq Iq Vdr VQ VQ
4.9 450 - - - - - - 15
5.0 700 150 150 5 12 250 15 5
5.1 - 200 220 10 22 500 30 15
V
mA A A mA mA mV mV mV
5 mA < IQ < 400 mA 6 V < VI < 40 V -
IQ = 1 mA; Tj = 25 C IQ = 1 mA; Tj 85 C IQ = 250 mA IQ = 400 mA IQ = 300 mA Vdr = VI - VQ IQ = 5 mA to 400 mA Vl = 8 V to 32 V IQ = 5 mA
1998-11-01
Semiconductor Group
6
TLE 4275
Characteristics (cont'd) VI = 13.5 V; - 40 C < Tj < 150 C (unless otherwise specified) Parameter Power supply ripple rejection Temperature output voltage drift Symbol Limit Values min. typ. 60 0.5 max. - - dB mV/ K - - Unit Measuring Condition
PSRR dV Q ---------dT
fr = 100 Hz; Vr = 0.5 Vpp
-
Reset Timing D and Output RQ Reset switching threshold Reset output low voltage Reset output leakage current Reset charging current Upper timing threshold Lower timing threshold Reset delay time Reset reaction time
1)
VRT VRQL IRQH Id VDU VDL td tRR
4.5 - - 3 1.5 0.2 10 -
4.65 0.2 0 6 1.8 0.4 16 0.5
4.8 0.4 2 9 2.2 0.7 22 2
V V A A V V ms s
-
Rext 5 k; VQ > 1 V VRQH > 4.5 V VD = 1 V
- -
CD = 47 nF CD = 47 nF
Measured when the output voltage VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V.
1
C 1 1000 F V
C 2 100 nF
D
5
Q
Q
CQ 22 F R ext 5 k VQ V RQ
dis d
VD Cd 47 nF
4
3 GND
2
RQ
RQ
GND
AES02472
Figure 3
Semiconductor Group 7 1998-11-01
TLE 4275
Test Circuit
V
< t RR
V RT VQ
dV d = dt C D
VDT VST
VD td t RR
V RO
Power-on-Reset Thermal Shutdown Voltage Dip at Input Undervoltage Secondary Spike Overload at Output
AED01542
Figure 4 Reset Timing
Semiconductor Group
8
1998-11-01
TLE 4275
Output Voltage VQ versus Temperature Tj
5.20
AED01928
Output Voltage VQ versus Input Voltage VI
12
AED01929
VQ
V 5.10
VQ V = 13.5 V
V 10
5.00
8
4.90
6
R L = 25
4.80
4
4.70
2
4.60 -40
0 0 40 80 120 C 160 Tj
0
2
4
6
8 V 10 V
Output Current IQ versus Temperature Tj
1200
AED01930
Output Current IQ versus Input Voltage VI
1.2
AED01931
Q
mA 1000
Q
A 1.0
T j = 25 C
800
0.8
600
0.6
T j = 125 C
400
0.4
200
0.2
0 -40
0
0 40 80 120 C 160 Tj
0
10
20
30
40 V 50 V
Semiconductor Group
9
1998-11-01
TLE 4275
Current Consumption Iq versus Output Current IQ
6
AED01932
Drop Voltage Vdr versus Output Current IQ
800 mV V Dr 700 600
AED01935
q
mA 5
4 500 3
T j = 125 C
400
V = 13.5 V
2
300 200
Tj
=25 C
1 100 0 0 20 40 60 80 120 0
mA Q
0
200
400
600
mA Q
1000
Current Consumption Iq versus Output Current IQ
80 mA q 70 60 50 40 30 20 10 0
AED01933
Charge Current Id versus Temperature Tj
8 A d 7 6 5
AED01936
d
V = 13.5 V VD = 1 V
V = 13.5 V
4 3 2 1 0 -40
0
100
200
300
400
mA Q
600
0
40
80
120 C 160 Tj
Semiconductor Group
10
1998-11-01
TLE 4275
Delay Switching Threshold VDU versus Temperature Tj
4.0 V V dT 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 -40
AED01937
V = 13.5 V V DU
0
40
80
120 C 160 Tj
Semiconductor Group
11
1998-11-01
TLE 4275
Package Outlines P-TO252-5-1 (D-PAK) (Plastic Transistor Single Outline)
2.3 +0.05 -0.10 B A 1 0.1 0...0.15 0.9 +0.08 -0.04
6.5 +0.15 -0.10
1 0.1
5.4 0.1
9.9 0.5 6.22 -0.2
0.8 0.15
(4.17)
0.15 max per side
0.51 min
5x0.6 0.1 1.14
0.5 +0.08 -0.04 0.1
4.56
0.25
M
AB
GPT09161
All metal surfaces tin plated, except area of cut.
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 12
Dimensions in mm 1998-11-01
TLE 4275
P-TO263-5-1 (SMD) (Plastic Transistor Single Outline)
10 0.2 9.8 0.15 A 8.5 1) 1.27 0.1 B 0.1 2.4 4.4
9.25 0.2
10.3
0.05
(15)
8 1)
0...0.15 5x0.8 0.1 4x1.7
8 max.
4.7 0.5
2.7 0.3
0.5 0.1
0.25
1)
M
AB
0.1
GPT09113
Typical All metal surfaces tin plated, except area of cut.
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 13
Dimensions in mm 1998-11-01
TLE 4275
P-TO220-5-11 (Plastic Transistor Single Outline)
10 0.2 9.8 0.15 8.5 1) 3.7-0.15 4.4 1.27 0.1 A
15.65 0.3
1)
170.3
2.8 0.2
13.4
0.05
8.6 0.3
10.2 0.3
C 0...0.15
3.70.3
9.25 0.2
0.5 0.1 3.9 0.4
0.8 0.1 1.7 0.25
M
2.4 AC
8.4 0.4
1)
Typical All metal surfaces tin plated, except area of cut.
GPT09064
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". Dimensions in mm Semiconductor Group 14 1998-11-01

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