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TST0913
SiGe-Power Amplifier for GSM 1800/1900 (DCS/PCS)
Description
The TST0913 is a monolithic integrated power amplifier. The device is manufactured using TEMIC Semiconductors' advanced Silicon-Germanium (SiGe) technology and has been designed for use in GSM 1800/1900-MHz (DCS/PCS) mobile phones. With a single supply voltage operation of 3 V and a neglectable leakage current in power-down mode, the TST0913 needs few external components.
Features
D 32 dBm output power D Power-added efficiency (PAE) 42% D Single supply operation at 3 V
no negative voltage necessary
D Power-ramp control D Simple input and output matching D Simple output matching for maximum flexibility D SMD package (PSSOP16 with heat slug)
D Current consumption in power-down mode 10 A,
no external power-supply switch required
Block Diagram
8 9 7 Control 10 11 RFin (1800/1900 MHz) 6 12 Match Match Match 13 14 5 VCC1 1 2 3 4 16 GND 15
14746
VCTL VCC,CTL GND
RFout/VCC3 (1800/1900 MHz)
Harmonic tuning
VCC2 Figure 1. Block diagram
Ordering Information
Extended Type Number TST0913-M TST0913-M Package PSSOP16 PSSOP16 Remarks Tube Taped and reeled
Rev. A1, 20-May-99
1 (5)
Preliminary Information
TST0913
Pin Description
VCC2 VCC2 VCC2 GND VCC1 RFin GND 1 2 3 4 5 6 7 16 GND 15 RFout/VCC3 14 RFout/VCC3 13 RFout/VCC3 12 RFout/VCC3 11 RFout/VCC3 10 RFout/VCC3 9 VCC,CTL
14986
VCTL 8
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
Symbol VCC2 VCC2 VCC2 GND VCC1 RFin GND VCTL VCC,CTL RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 GND
Function Supply voltage 2 pp y g
Ground Supply voltage 1 RF input Ground (control) Control input Supply voltage for control RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 Ground
Figure 2. Pinning
Absolute Maximum Ratings
All voltages are referred to GND Parameter Supply voltage VCC Pins 5, 1, 2, 3, 10, 11, 12, 13, 14, 15 and 9 Input power Pin 6 Gain-control voltage Pin 8 Duty cycle for operation Burst duration Junction temperature Storage temperature Symbol VCC1, VCC2 VCC3, VCC, CTL Pin VCTL tburst Tj Tstg Min. Typ. Max. 5.0 Unit V
0
- 40
6 2.2 25 1.2 + 150 +150
dBm V % ms C C
Thermal Resistance
Parameters Junction ambient Symbol RthJA Value t.b.d. Unit K/W
Operating Range
All voltages are referred to GND Parameter Supply voltage Ambient temperature Input frequency Symbol VCC1, VCC2 VCC3, VCC, CTL Tamb fin Min. 2.4 - 25 1800/1900 Typ. 3.5 Max. 4.5 + 85 Unit V C MHz
2 (5)
Rev. A1, 20-May-99
Preliminary Information
TST0913
Electrical Characteristics
Test conditions: VCC = VCC1, VCC2, VCC3, VCC, CTL = 3.5 V, VCTL = 1.5 V, Tamb = + 25C (see application circuit) Parameters Power supply Supply voltage Current consumption Current consumption RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power Test Conditions / Pins Symbol VCC I I Min. 2.7 Typ. 3.5 1.1 10 Max. 4.5 Unit V A A
Active mode Pout = 32 dBm, PAE = 42% Power-down mode VCTL 0.2 V DCS PCS
fin Zi Pin VSWR Zo Pout
1710 1850 50 0
1785 1910 6 2:1
MHz MHz
W W
dBm
Pin = 0 to 6 dBm, Pout = 31.5 dBm
50 31.7 30.0 25 35 42 10 : 1 10 : 1 -35 -35 - 71 - 71 0.5 48 32.5 30.5 - 20
Minimum output power Power-added efficiency at Pout,max
Stability Load mismatch (stable, no demage) Second harmonic distortion Third harmonic distortion Noise power Pout = 31.5 dBm, RBW = 100 kHz f = 1805 to 1880 MHz (DCS) f = 1930 to 1990 MHz (PCS) Rise and fall time Isolation between input Pin = 0 to 6 dBm, and output VCTL 0.2 V (power down) Power control Control curve slope Pout 25 dBm Power-control range VCTRL = 0.3 to 2.0 V Control-voltage range Control current Pin = 0 to 6 dBm, VCTL = 0 to 2.2 V *) with external matching (see application circuit)
Pin = 0 dBm, RL = RG = 50 VCC = 3.5 V, Tamb = +25C VCC = 2.7 V, Tamb = +85C VCTL = 0.5 V Pout = 26 dBm Pout = 28 dBm Pout = 31.5 dBm Tamb = -25 to + 85 C Pout = 31.5 dBm all phases
dBm dBm dBm %
PAE
VSWR VSWR 2fo 3fo
dBc dBc dBm dBm s dB
tr, tf
150 VCTL ICTL 50 0.3 2.0 200
dB/ V dB V A
Rev. A1, 20-May-99
3 (5)
Preliminary Information
TST0913
Application Circuit
V CC C1 100nF C2 220nF C10 220nF
T1 T2
1 2
16 T8 15 harmonic tuning 14 T7 13 12 11 10 Control 9 C7 1 nF C8 3.9pF AVX
C12 10pF T6
C11 10pF
C3 8.2pF AVX T3 C4 12pF C5 T4
1/4 wavelength line RF
3 4 5
OUT C9 1800/1900 MHz 6.8pF AVX
IN 1800/1900 MHz L1 1.8nH
RF
6 2.2pF AVX V CTL T5 7 C6 22pF 8
16504
Figure 3. Application circuit
Package Information
Package PSSOP16
Dimensions in mm
4.98 4.80 1.60 1.45 0.25 0.64 4.48 16 9 0.10 0.00 3.91 6.02
0.2
2.21 1.80
technical drawings according to DIN specifications
1
3.12 2.72
8
13048
4 (5)
Rev. A1, 20-May-99
Preliminary Information
TST0913
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A1, 20-May-99
5 (5)
Preliminary Information

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