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U2790B
1000-MHz Quadrature Modulator
Description
The U2790B is a 1000-MHz quadrature modulator using Atmel Wireless & Microcontrollers' advanced UHF process. It features a frequency range from 100 MHz up to 1000 MHz, low current consumption, and single-ended RF and LO ports. Adjustment-free application makes the direct converter suitable for all digital radio systems up to 1000 MHz, e.g., GSM, ADC, JDC.
Electrostatic sensitive device. Observe precautions for handling.
Features
D Supply voltage 5 V (typical) D Very low power consumption: 150 mW (typical) for -1dBm output level D Very good sideband suppression by means of duty cycle regeneration of the LO input signal D Phase control loop for precise 90 phase shifting D Power-down mode D Low LO input level: -10dBm (typical) D 50-W single-ended LO and RF port D LO frequency from 100 MHz to 1 GHz D SO16 package
Benefits
D No external components required for phase shifting D Adjustment free, hence saves time D Only three external components necesary, this results in cost and board space saving
Block Diagram
SPD BBAi BBAi 8 7 6 PD 1 Power VS down 5,4
LOi Phadj BBBi BBBi
12 15 16 9 10
Duty cycle regenerator
Frequency doubler
0 90
90 / control loop
RFO 3
2,11,13,14 GND
Figure 1. Block diagram
93 7757 e
Ordering Information
Extended Type Number U2790B-MFP U2790B-MFPG3 Package SO16 SO16 Tube Taped and reeled Remarks
Rev. A4, 09-Oct-00
1 (12)
U2790B
Pin Description
SO16 Pin 1 GND RFO VS VS SPD BBAi BBAi 2 3 4 5 6 7 8
94 8023 e
PD
1
16 15 14 13 12 11 10 9
Phadj Phadj GND GND LOi GND BBBi BBBi
Symbol PD GND RFo VS SPD BBAi BBAi BBBi BBBi LOi Phadj
Function Power-down port Ground RF output Supply voltage Settling time power down Baseband input A Baseband input A inverse Baseband input B Baseband input B inverse LO input Phase adjustment (not necessary for regular applications)
2, 11, 13, 14 3 4, 5 6 7 8 9 10 12 15/16
Absolute Maximum Ratings
Parameters Supply voltage Input voltage Pins 4 and 5 Pins 7, 8, 9, 10 and 12 Symbol VS Vi Tj Tstg Value 6 0 to VS 125 -40 to +125 Unit V V C C
Junction temperature Storage-temperature range
Operating Range
Parameters Supply-voltage range Pins 4 and 5 Ambient temperature range Symbol VS Tamb Value 4.5 to 5.5 -40 to +85 Unit V C
Thermal Resistance
Parameters Junction ambient SO16 Symbol RthJA Value 110 Unit K/W
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Rev. A4, 09-Oct-00
U2790B
Electrical Characteristics
Test conditions (unless otherwise specified): VS = 5 V, Tamb = 25C, referred to test circuit, system impedance ZO = 50 W, fLO = 900 MHz, PLO = -10 dBm, VBBi = 1 Vpp diff
Parameters Supply-voltage range Supply current Baseband inputs Input-voltage range (diff.) Input impedance (single ended) Input-frequency range 5 Internal bias voltage Temperature coefficient LO input Frequency range Input level 1 Input impedance Voltage standing wave ratio Duty-cycle range RF output Output level LO suppression 2 Sideband suppression 2,3 fLO: = 900 MHz fLO: = 150 MHz fLO: = 900 MHz fLO: = 150 MHz Pin 3 PRFo LORFo SBSRFo -5 30 32 35 30 -1 35 35 40 35 dBm dB dB Pin 12 fLOi PLOi ZiLO VSWRLO DCRLO 0.4 50 -12 -10 50 1.4 2 0.6 1000 -5 MHz dBm W - - Test Conditions / Pin Pins 4 and 5 Pins 4 and 5 Pins 7-8, 9-10 VBBi ZBBi fBBi VBBb TCBB 0 2.35 2.5 0.1 1000 3.2 250 2.65 <1 1500 mVpp kW MHz V mV/C Symbol VS IS Min. 4.5 30 Typ. Max. 5.5 Unit V mA
Phase error 4 Amplitude error Noise floor
VSWR 3rd-order baseband harmonic suppression RF harmonic suppression Power-down mode Supply current Settling time Switching voltage Power on VPD x 0.5 V Pins 4, 5 VPD = 1 V CSPD = 100 pF, CLO = 100 pF CRFo = 1 nF Pin 6 to 3 Pin 1
Pe Ae VBBi = 2 V, VBBi = 3 V VBBi = VBBi = 2.5 V NFL
VSWRRF SBBH SRFH IPD 35
<1 <"0.2 5 - 132 - 144
1.6 45 35 1 10 10 2
deg. dB dBm/Hz
dB dB mA ms
tsPD
VPDon
4
V
Power down
Note: 1 Note: 2 Note: 3 Note: 4 Note: 5
VPDdown
1
V
The required LO level is a function of the LO frequency. In reference to an RF output level v -1 dBm and I/Q input level of 400 mVpp diff Sideband suppression is tested without connection at Pins 15 and 16. For higher requirements a potentiometer can be connected at these pins. For Tamb = - 30 to + 85C and VS = 4.5 to 5.5 V By low-impedance signal source
Rev. A4, 09-Oct-00
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U2790B
Typical Single Sideband Output Spectrum at VS = 4.5 V and VS = 5.5 V fLO = 900 MHz, PLO = - 10 dBm, VBBi = 1 VPP (differential) Tamb = 25C
94 7856 e
Figure 2.
Typical GMSK Output Spectrum
94 7855 e
Figure 3.
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Rev. A4, 09-Oct-00
U2790B
Typical RF-Harmonic Output Spectrum
94 7854 e
Figure 4.
16 VBBi=0.2VPP IP3 ( dBm )
12 10 VBBi=0.4VPP 8 6 VBBi=1.0VPP 4
12 IP3 ( dBm )
8
VBBi=0.4VPP
4 2 0 -40 -20
94 8884
0
20
40
60
80
100
94 8885
0 -40 -20
0
20
40
60
80
100
Temperature ( C )
Temperature ( C )
Figure 5. OIP3 vs. Tamb, LO = 150 MHz, level - 20 dBm
Figure 6. OIP3 vs. Tamb, LO = 900 MHz, level - 10 dBm
Rev. A4, 09-Oct-00
5 (12)
U2790B
0.5 0 Supply Current ( mA ) 100
94 8886
40
Output Power ( dBm )
-0,5 -1 -1.5 -2 -2.5 -40 -20
FLO=150MHz
30
20
FLO=900MHz
10
0
20
40
60
80
0 -40 -20
0
20
40
60
80
100
94 8887
Temperature ( C )
Temperature ( C )
Figure 7. Output power vs. Tamb
Figure 8. Supply current vs. Tamb
Typical S11 Frequency Response of the RF Output
94 7850 e
Figure 9.
6 (12)
Rev. A4, 09-Oct-00
U2790B
Typical VSWR Frequency Response of the RF Output
94 7849 e
Figure 10.
Typical S11 Frequency Response of the LO Input
94 7852 e
Figure 11.
Rev. A4, 09-Oct-00
7 (12)
U2790B
10 2 8 6 VBBi ( differential ) ( V ) PP 1000 LO Frequency (MHz)
94 7858
VSWR
1
4
2 0 100
94 7851
0 0 200 400 600 800 1000 1200 1400 LO Frequency ( MHz )
Figure 12. Typical VSWR frequency response of the LO input
60
Figure 15. Typical required VBBi input signal (differential) vs. LO frequency for PO = 0 dBm and PO = - 2 dBm
0
Supply Current ( mA )
50 -10 40 LO Power ( dBm ) -20 0 20 40 60 80 100
-20
30 20
-30 -40
10 -40
94 7845
-50 0
94 7857
Temperature ( C )
200
400
600 800
1000 1200 1400
LO Frequency ( MHz )
Figure 13. Typical supply current vs. temperature at VS = 5 V
0
Figure 16. Typical useful LO power range vs. LO frequency at Tamb = 25 C
Output Power ( dBm )
-5
0
94 7859
200
400
600 800
1000 1200 1400
LO Frequency ( MHz )
Figure 14. Typical output power vs. LO-frequency at Tamb = 25C, VBBi = 230 mVPP (differential)
8 (12)
Rev. A4, 09-Oct-00
U2790B
Application Circuit
Ainv 220n
8
1n SPD
6
PD
1
Power down
A
220n BBAi BBAi
7
Power down 5,4 VS
VS 100n
Baseband LO processing B VS
100p 10k LOi Phadj BBBi BBBi 220n
12 15 16 9 10
Duty cycle regenerator
Frequency doubler
0 90
90 / control loop
1n OUT
3 RFO
220n
2,11,13,14
Binv
GND
94 8045 e
Figure 17.
PCB Basic Layout
94 7847 e
Figure 18. U2790B-FP (SO 16)
Rev. A4, 09-Oct-00
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U2790B
Application Notes
Noise Floor and Settling Time
In order to reduce noise on the power-down control input and improve the wide-off noise floor of the 900-MHz RF output signal, capacitor CPD should be connected from Pin 6 to ground in the shortest possible way. The settling time has to be considered for the system under design. For GSM applications, a value of CPD = 1 nF defines a settling time, tsPD, equal or less than 3 ms. This capacitance does not have any influence on the noise floor within the relevant GSM mask. For mobile applications the mask requirements can be achieved very easily without CPD. A significant improvement of the wide-off noise floor is obtainable with CPD greater than 100 nF. Such values are recommended for applications where the settling time is not critical such as in base stations. Coupling capacitors for LOi and RFO also have a certain impact on the settling time. The values used for the measurements are CLOi = 100 pF and CRFo = 1 nF.
Baseband Coupling
U2790B-FP (SO16) has an integrated biasing network which allows AC coupling of the baseband signal at a low count of external components. The bias voltage is 2.5 V" 0.15 V. Figure 19 shows the baseband input circuitry with a resistance of 3.2 kW for each asymmetric input. The internal DC offset between A and A, and B and B is typically < " 1 mV with a maximum of " 3 mV. DC coupling is also possible with an external DC voltage of 2.5 " 0.15 V.
Circuitries
Mixer input stage 3.2 kW
A,B A, B
94 7869 e
Figure 19. Baseband input circuitry
VS RFO 20 W 3
LOi 12 50 W 20 pF
94 8508 94 8509
Figure 20. RF output circuitry
Figure 21. LO input circuitry
10 (12)
Rev. A4, 09-Oct-00
U2790B
Package Informaion
Package SO16
Dimensions in mm
10.0 9.85 5.2 4.8 3.7
1.4 0.4 1.27 8.89 16 9 0.25 0.10 0.2 3.8 6.15 5.85
technical drawings according to DIN specifications
13036
1
8
Rev. A4, 09-Oct-00
11 (12)
U2790B
Ozone Depleting Substances Policy Statement
It is the policy of Atmel Germany GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
1.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.atmel-wm.com
Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423
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Rev. A4, 09-Oct-00

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