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AO4607 Complementary Enhancement Mode Field Effect Transistor
General Description The AO4607 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. A Schottky diode is co-packaged with the nchannel FET to minimize body diode losses. AO4607 is Pb-free (meets ROHS & Sony 259 specifications). AO4607L is a Green Product ordering option. AO4607 and AO4607L are electrically identical.
S2/A G2 S1 G1 1 2 3 4 8 7 6 5 D2/K D2/K D1 D1
Features
n-channel VDS (V) = 30V ID = 6.9A (VGS=10V) RDS(ON) < 28m (VGS=10V) < 42m (VGS=4.5V) p-channel -30V -6A (VGS=1-0V) RDS(ON) < 35m (VGS = -10V) < 58m (VGS =- 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D K A S2
D
G
G
SOIC-8
S
n-channel
p-channel Max p-channel -30 20 -6 -5 -30 2 1.28 -55 to 150 Units V V A W C Units V A W C
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain 6.9 TA=25C A Current TA=70C 5.8 ID B Pulsed Drain Current IDM 30 TA=25C TA=70C Power Dissipation Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward TA=25C A Current TA=70C Pulsed Diode Forward CurrentB Power Dissipation
A
PD TJ, TSTG Symbol VDS ID IDM PD TJ, TSTG
2 1.28 -55 to 150
Maximum Schottky 30 3 2 20 2 1.28 -55 to 150
TA=25C TA=70C
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
AO4607
Thermal Characteristics: n-channel, Schottky and p-channel Parameter Symbol t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C t 10s Maximum Junction-to-Ambient A RJA Steady-State Maximum Junction-to-Ambient A RJL Steady-State Maximum Junction-to-Lead C
Device n-ch n-ch n-ch p-ch p-ch p-ch Schottky Schottky Schottky
Typ 48 74 35 48 74 35 47.5 71 32
Max 62.5 110 60 62.5 110 40 62.5 110 40
Units C/W C/W C/W C/W C/W C/W C/W C/W C/W
Alpha Omega Semiconductor, Ltd.
AO4607
N-Channel + Schottky Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=6.9A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=5.0A Forward Transconductance VDS=5V, ID=6.9A 10 Body-Diode+Schottky Forward Voltage IS=1A Maximum Body-Diode+Schottky Continuous Current TJ=125C 1 20 22.5 31.3 34.5 15.4 0.45 0.5 5.5 680 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 131 77 3 13.84 VGS=10V, VDS=15V, ID=6.9A 6.74 1.82 3.2 4.6 VGS=10V, VDS=15V, RL=2.2, RGEN=3 IF=6.9A, dI/dt=100A/s IF=6.9A, dI/dt=100A/s 4.1 20.6 5.2 13.7 4.1 16.5 3.6 16.6 820 28 38 42 1.9 Min 30 0.007 3.2 12 0.05 10 20 100 3 mA nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC Typ Max Units V
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body-Diode+Schottky Reverse Recovery Time Body-Diode+Schottky Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately Rev 4: Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha Omega Semiconductor, Ltd.
AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
30 25 20 ID (A) 15 10 5 0 0
10V
6V 5V 4.5V
20 16 12 8 4 0 125C 25C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS=5V
4V ID(A) 4 5
3.5V VGS=3V
1
2
3
VDS (Volts) Fig 1: On-Region Characteristics
VGS (Volts) Figure 2: Transfer Characteristics
60 50 RDS(ON) (m) 40 30 20 10 0 5 10 15 20 ID (Amps) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=4.5V Normalized On-Resistance
1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0 50 100 150 200 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature
ID=6.9
VGS=10V
VGS=4.5V
VGS=10V
70 60 RDS(ON) (m) 50 40 30 20 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C
1.0E+01
ID=6.9
IS Amps
1.0E+00 1.0E-01 1.0E-02 1.0E-03 0.0
125C
25C FET + Schottky 0.2 0.4 0.6 0.8 1.0
VSD (Volts) Figure 6: Body diode with parallel Schottky characteristics (Note F)
Alpha & Omega Semiconductor, Ltd.
AO4607 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL
10 8 VGS (Volts) 6 4 2 0 0 2 4 6 8 10 12 14 Qg (nC) Figure 7: Gate-Charge characteristics 1000 VDS=15V ID=6.9A Capacitance (pF) 900 800 700 600 500 400 300 200 100 0 0 Crss 5 10 15 20 25 30 Coss (FET + Schottky) Ciss f=1MHz VGS=0V
VDS (Volts) Figure 8: Capacitance Characteristics: MOSFET + Parallel Schottky 40 TJ(Max)=150C TA=25C
100 RDS(ON) limited ID (Amps) 10 1ms 10ms 0.1s 1 1s 10s 0.1 0.1 1 VDS (Volts) DC 10
TJ(Max)=150C TA=25C 100s 10s Power W
30
20
10
100
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton T 100 1000
Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
AO4607
P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-6A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5A Forward Transconductance VDS=-5V, ID=-6A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.2 30 28 37 44 13 -0.76 -1 -4.2 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.5 VGS=-10V, VDS=-15V, ID=-6A 9.6 2.7 4.5 7.7 VGS=-10V, VDS=-15V, RL=2.7, RGEN=3 IF=-6A, dI/dt=100A/s 5.7 20.2 9.5 20 8.8 24 4.4 22.2 1100 35 45 58 -2 Min -30 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any ven application depends onon the user's specific board design. The current rating based onon the t 10s thermal given application depends the user's specific board design. The current rating is is based the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 4: Sept 2005
Alpha Omega Semiconductor, Ltd.
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
30 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 60 50 45 RDS(ON) (m) 40 35 30 25 20 15 10 0 5 10 15 20 25 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 RDS(ON) (m) 70 60 50 40 30 20 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 25C 125C ID=-6A 1.0E+01 1.0E+00 1.0E-01 -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C VGS=-10V VGS=-4.5V Normalized On-Resistance 55 1.60 ID=-6A 1.40 VGS=-10V -3.5V -10V -6V -5V -4.5V 30 25 -4V -ID(A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=-5V
VGS=-3V
1.20
VGS=-4.5V
1.00
0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
Alpha & Omega Semiconductor, Ltd.
AO4607
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL
10 8 -VGS (Volts) 6 4 2 0 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics VDS=-15V ID=-6A Capacitance (pF) 1500 1250 1000 750 500 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics
Ciss
Coss
Crss
100.0
TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 10s 100s 1ms 10ms
40 30 Power (W) 20 10
TJ(Max)=150C TA=25C
-ID (Amps)
10.0
1.0
1s 10s DC
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001 0.0001 0.001 0.01
PD Ton T
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
100
1000
Alpha & Omega Semiconductor, Ltd.

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