SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR
ISSUE 2 - OCTOBER 1995 PARTMARKING DETAILS COMPLEMENTARY TYPES FZT589 FZT489
FZT589
C
E C B SYMBOL VCBO VCEO VEBO ICM IC IB Ptot Tj:Tstg MIN. -50 -30 -5 -100 -100 -100 -0.35 -0.65 -1.2 -1.1 100 100 80 40 100 15 300 MHz pF MAX. VALUE -50 -30 -5 -2 -1 -200 2 -55 to +150 UNIT V V V nA nA nA V V V CONDITIONS. IC=-100A IC=-1m IE=-100A VCB=-30V VCES=-30V VEB=-4V IC=-1A, IB=-100mA* IC=-2A, IB=-200mA* IC=-1A, IB=-100mA* IC=-1A, VCE=-2V* IC=-1mA, VCE=-2V* IC=-500mA, VCE=-2V* IC=-1A, VCE=-2V* IC=-2A, VCE=-2V* IC=-100mA, VCE=-5V f=100MHz VCB=-10V, f=1MHz UNIT V V V A A mA W C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Emitter Cut-Off Current Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO VCE(sat) VBE(sat) VBE(on) hFE
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated)
fT Cobo
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMT549 datasheet 3 - 194
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