 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD - 95197 IRF7338PBF HEXFET(R) Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 12V P-Ch -12V 6 5 P-CHANNEL MOSFET RDS(on) 0.034 0.150 Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. This Dual SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 -55 to + 150 8.0 P-Channel -12 -3.0 -2.5 -13 Units A W mW/C V C Thermal Resistance Symbol RJL RJA Parameter Junction-to-Drain Lead Junction-to-Ambient Typ. --- --- Max. 20 62.5 Units C/W www.irf.com 1 9/30/04 IRF7338PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 12 -12 -- -- -- -- -- -- 0.6 -0.40 9.2 3.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- 0.01 -0.01 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. -- -- -- -- 0.034 0.060 0.150 0.200 1.5 -1.0 -- -- 20 -1.0 50 -25 100 100 8.6 6.6 1.9 1.3 3.9 1.6 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Units V V/C V S A nA Conditions VGS = 0V, ID = 250A VGS = 0V, ID = -250A Reference to 25C, ID = 1mA Reference to 25C, ID = -1mA VGS = 4.5V, ID = 6.0A VGS = 3.0V, ID = 2.0A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 6.0V, ID = 6.0A VDS = -6.0V, ID = -1.5A VDS = 9.6V, VGS = 0V VDS = -9.6 V, VGS = 0V VDS = 9.6V, VGS = 0V, TJ = 55C VDS = -9.6V, VGS = 0V, TJ = 55C VGS = 12V VGS = 8.0V N-Channel ID = 6.0A, VDS = 6.0V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -9.6V, VGS = -4.5 V N-Channel VDD = 6.0V, ID = 1.0A, RG = 6.0, VGS = 4.5V P-Channel VDD = -6.0V, ID = -2.9A, RG = 6.0, VGS = -4.5V pF N-Channel VGS = 0V, VDS = 9.0V, = 1.0MHz P-Channel VGS = 0V, VDS = -9.0V, = 1.0KHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance nC ns Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 6.3 -- -- -3.0 A -- -- 26 -- -- -13 -- -- 1.3 TJ = 25C, IS = 1.7A, VGS = 0V V -- -- -1.2 TJ = 25C, IS = -2.9A, VGS = 0V -- 51 76 N-Channel ns -- 37 56 TJ = 25C, IF = 1.7A, di/dt = 100A/s -- 43 64 P-Channel nC TJ = 25C, IF = -2.9A, di/dt = -100A/s -- 20 30 Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. Surface mounted on 1 in square Cu board. The N-channel MOSFET can withstand 15V VGS max for up to 24 hours over the life of the device. 2 www.irf.com N-Channel 100 100 IRF7338PBF VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP ID, Drain-to-Source Current (A) 10 ID, Drain-to-Source Current (A) VGS 7.5V 4.5V 4.0V 3.5V 3.0V 2.7V 2.0V BOTTOM 1.5V TOP 10 1 1.5V 0.1 1 1.5V 0.01 0.1 1 20s PULSE WIDTH Tj = 25C 10 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100.0 ID, Drain-to-Source Current ( A) T J = 25C T J = 150C 10 ISD, Reverse Drain Current (A) 10.0 T J = 150C 1.0 T J = 25C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1 1.0 2.0 VDS = 10V 20s PULSE WIDTH 3.0 4.0 0.1 VGS , Gate-to-Source Voltage (V) VSD, Source-toDrain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7338PBF 2.0 N-Channel 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 5 10 15 20 25 30 ID , Drain Current (A) VGS = 4.5V I D = 6.3A RDS(on) , Drain-to-Source On Resistance 1.5 R DS (on) , Drain-to-Source On Resistance ( ) (Normalized) VGS = 3.0V 1.0 0.5 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = 4.5V 120 140 160 TJ , Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to -Source On Resistance ( ) 0.05 80 60 0.04 Power (W) 0.03 40 ID = 6.3A 20 0.02 3.0 4.0 5.0 6.0 7.0 8.0 0 0.00 0.00 0.00 0.01 0.10 1.00 10.00 VGS, Gate -to -Source Voltage (V) Time (sec) 4 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Typical Power Vs. Time www.irf.com N-Channel 1000 IRF7338PBF 12 ID= 6.0A VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss = Cgd = C + Cgd ds 800 10 8 6 4 2 0 VDS= 12V C, Capacitance (pF) 600 Ciss Coss 400 200 Crss 0 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 12.0 VDS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 D = 0.50 (Z thJA) 0.20 10 0.10 Thermal Response 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T t1/ t 2 +TA 1 10 J = P DM x Z thJA 0.1 0.00001 0.0001 0.001 0.01 0.1 t 1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7338PBF 7.0 N-Channel VDS 6.0 RD VGS RG VGS Pulse Width 1 s Duty Factor 0.1 % D.U.T. + 5.0 ID , Drain Current (A) -VDD 4.0 3.0 2.0 Fig 13a. Switching Time Test Circuit VDS 90% 25 50 75 100 125 150 1.0 0.0 TC , Case Temperature ( C) Fig 12. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 13b. Switching Time Waveforms Current Regulator Same Type as D.U.T. QG 50K 12V .2F .3F VGS VG QGS QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com P-Channel IRF7338PBF VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 100 -I D, Drain-to-Source Current (A) 10 -I D, Drain-to-Source Current (A) VGS -7.5V -4.5V -4.0V -3.5V -3.0V -2.7V -2.0V BOTTOM -1.5V TOP 100 10 -1.5V 1 -1.5V 1 0.1 0.1 1 20s PULSE WIDTH Tj = 25C 10 0.1 0.1 1 20s PULSE WIDTH Tj = 150C 10 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 15. Typical Output Characteristics Fig 16. Typical Output Characteristics 100 100.0 -I D, Drain-to-Source Current ( A) -I SD, Reverse Drain Current (A) 10.0 T J = 150C 10 T J = 25C T J = 150C 1.0 T J = 25C VGS = 0V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 1.0 2.0 VDS = -10V 20s PULSE WIDTH 3.0 4.0 0.1 -V GS , Gate-to-Source Voltage (V) -V SD, Source-toDrain Voltage (V) Fig 17. Typical Transfer Characteristics Fig 18. Typical Source-Drain Diode Forward Voltage www.irf.com 7 IRF7338PBF 2.0 P-Channel 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0 2 4 6 8 10 12 14 -I D , Drain Current (A) VGS = -2.7V I D = -3.0A RDS(on) , Drain-to-Source On Resistance 1.5 1.0 RDS (on) , Drain-to-Source On Resistance ( ) (Normalized) 0.5 VGS = -4.5V 0.0 -60 -40 -20 0 20 40 60 80 100 V GS = -4.5V 120 140 160 TJ , Junction Temperature ( C) Fig 19. Normalized On-Resistance Vs. Temperature Fig 20. Typical On-Resistance Vs. Drain Current RDS(on) , Drain-to -Source On Resistance ( ) 0.12 80 60 0.10 Power (W) 0.08 40 ID = -3.0A 20 0.06 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 0.00 0.00 0.00 0.01 0.10 1.00 10.00 -V GS, Gate -to -Source Voltage (V) Time (sec) Fig 21. Typical On-Resistance Vs. Gate Voltage Fig 22. Maximum Avalanche Energy Vs. Drain Current 8 www.irf.com P-Channel 800 IRF7338PBF ID= -2.9A -V GS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds SHORTED Crss Coss =C gd = Cds + Cgd 12 10 8 6 4 2 0 VDS = -9.6V VDS= -6.0V 600 C, Capacitance (pF) Ciss 400 200 Coss Crss 0 1 10 100 0 2 4 6 8 10 - -V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nC) Fig 23. Typical Capacitance Vs. Drain-to-Source Voltage Fig 24. Typical Gate Charge Vs. Gate-to-Source Voltage 100 D = 0.50 (Z thJA) 0.20 10 0.10 Thermal Response 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = 2. Peak T 0.1 0.00001 0.0001 0.001 0.01 0.1 t1/ t 2 +TA 1 10 J = P DM x Z thJA t 1, Rectangular Pulse Duration (sec) Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 9 IRF7338PBF 3.0 VDS 2.4 RD VGS RG D.U.T. + -I D , Drain Current (A) 1.8 VGS 1.2 Pulse Width 1 s Duty Factor 0.1 % Fig 27a. Switching Time Test Circuit 0.6 td(on) tr t d(off) tf VGS 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) Fig 26. Maximum Drain Current Vs. Case Temperature 90% VDS Fig 27b. Switching Time Waveforms Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 28a. Basic Gate Charge Waveform Fig 28b. Gate Charge Test Circuit 10 www.irf.com + D.U.T. VDS - VDD - IRF7338PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING TO A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOS FET) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY SIT E CODE LOT CODE PART NUMBER INTERNAT IONAL RECT IFIER LOGO XXXX F7101 www.irf.com 11 IRF7338PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.09/04 12 www.irf.com |
Price & Availability of IRF7338PBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |