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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGP20N35CL/D Advanced Information SMARTDISCRETESTM Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate-Emitter ESD protection, Gate-Collector overvoltage protection from SMARTDISCRETESTM monolithic circuitry for usage as an Ignition Coil Driver. * Temperature Compensated Gate-Drain Clamp Limits Stress Applied to Load * Integrated ESD Diode Protection * Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors * Low Saturation Voltage * High Pulsed Current Capability MGP20N35CL 20 AMPERES VOLTAGE CLAMPED N-CHANNEL IGBT Vce(on) = 1.8 VOLTS 350 VOLTS (CLAMPED) (R) C G G Rge C E E CASE 221A-06, Style 9 TO-220AB MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Collector-Gate Voltage Gate-Emitter Voltage Collector Current -- Continuous @ TC = 25C Reversed Collector Current - pulse width Symbol VCES VCGR VGE Value CLAMPED CLAMPED CLAMPED 20 12 150 3.5 - 55 to 175 Unit Vdc Vdc Vdc Adc Apk Watts kV C t 100 ms IC ICR PD ESD TJ, Tstg Total Power Dissipation @ TC = 25C (TO-220) Electrostatic Voltage -- Gate-Emitter Operating and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case - (TO-220) Thermal Resistance -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds Mounting Torque, 6-32 or M3 screw RqJC RqJA TL 1.0 62.5 275 10 lbfin (1.13 Nm) C/W C UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS Single Pulse Collector-Emitter Avalanche Energy @ Starting TJ = 25C @ Starting TJ = 150C SMARTDISCRETES and TMOS are trademarks of Motorola, Inc. This document contains information on a new product. Specifications and information herein are subject to change without notice. EAS 550 150 mJ (c) Motorola TMOS Motorola, Inc. 1995 Power MOSFET Transistor Device Data 1 MGP20N35CL ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-to-Emitter Breakdown Voltage (IClamp = 10 mA, TJ = -40 to 150C) Zero Gate Voltage Collector Current (VCE = 250 V, VGE = 0 V, TJ = 125C) (VCE = 15 V, VGE = 0 V, TJ = 125C) Resistance Gate-Emitter (TJ = -40 to 150C) Gate-Emitter Breakdown Voltage (IG = 2 mA) Collector-Emitter Reverse Leakage (VCE = -15 V, TJ = -40 to 150C) Collector-Emitter Reversed Breakdown Voltage (IE = 75 mA) ON CHARACTERISTICS (1) Gate Threshold Voltage (VCE = VGE, IC = 1 mA) (VCE = VGE, IC = 1 mA, TJ = 150C) Collector-Emitter On-Voltage (VGE = 5 V, IC = 5 A) (VGE = 5 V, IC = 10 A) (VGE = 5 V, IC = 10 Adc, TJ = 150C) Forward Transconductance (VCE DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (1) Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time (VCC = 320 V, IC = 20 A, L = 200 mH, RG = 1 KW) (VCC = 14 V, IC = 20 A, L = 200 mH, RG = 1 KW) (VCC = 280 V, IC = 20 A, VGE = 5 V) Qg Qgs Qgd td(off) tf td(on) tr -- -- -- -- -- -- -- 45 8.0 20 TBD TBD TBD TBD 80 -- -- TBD TBD TBD TBD s s nC (VCE = 25 Vdc, VGE = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss -- -- -- 2800 200 25 -- -- -- pF VGE(th) 1.0 0.75 VCE(on) -- -- -- gfs 10 1.1 1.4 1.4 16 1.4 1.9 1.8 -- S 1.7 -- 2.4 1.8 V V BVCES 320 ICES -- -- RGE BVGES ICES BVCER 10k 11 -- 26 -- -- 16k 13 8 40 1.0 200 30k 15 100 120 mA 350 380 Vdc Symbol Min Typ Max Unit "V mA V mA W u 50 V, IC = 10 A) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL TYPICAL ELECTRICAL CHARACTERISTICS 40 VGE = 10 V I C , COLLECTOR CURRENT (AMPS) 30 4V 20 40 TJ = 25C I C , COLLECTOR CURRENT (AMPS) 30 4V 20 VGE = 10 V 5V TJ = 125C 5V 10 3V 0 0 2 4 6 8 10 10 3V 0 0 1 2 3 4 5 6 7 8 9 10 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1. Output Characteristics, TJ = 25C Figure 2. Output Characteristics, TJ = 125C VCE , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) 40 I C , COLLECTOR CURRENT (AMPS) VCE = 10 V 30 2.2 VGE = 5 V 2.0 1.8 15 A 1.6 1.4 1.2 1.0 -50 10 A IC = 20 A 20 TJ = 125C 10 25C 0 1 2 3 4 5 0 50 100 150 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 3. Transfer Characteristics Figure 4. Collector-to-Emitter Saturation Voltage versus Junction Temperature 10000 VCE = 0 V 1000 Ciss TJ = 25C 1000 VCE = 0 V TJ = 25C C, CAPACITANCE (pF) C, CAPACITANCE (pF) 100 Ciss 100 Coss 10 Crss 10 Coss Crss 1.0 0 25 50 75 100 125 150 175 200 1.0 10 100 DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1000 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5. Capacitance Variation Figure 6. High Voltage Capacitance Variation Motorola TMOS Power MOSFET Transistor Device Data 3 MGP20N35CL VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) Qg TOTAL SWITCHING ENERGY LOSSES (mJ) 8 60 50 40 30 20 10 0 TF VDD = 320 V VGE = 5 V TJ = 125C IC = 20 A 60 50 Eoff SWITCHING TIME ( m S) Td(off) 40 30 20 10 0 5000 6 Qgs 4 Qgd 2 TJ = 25C IC = 20 A 0 0 10 20 30 40 0 1000 2000 3000 4000 Qg, TOTAL GATE CHARGE (nC) RG, GATE RESISTANCE (OHMS) Figure 7. Gate-to-Emitter and Collector-to-Emitter Voltage vs Total Charge Figure 8. Total Switching Losses versus Gate Temperature TOTAL SWITCHING ENERGY LOSSES (mJ) 50 TOTAL SWITCHING ENERGY LOSSES (mJ) 6 5 SWITCHING TIME ( m S) 4 26 24 22 20 18 16 14 12 25 50 75 100 TF VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH IC = 20 A 6 40 Eoff SWITCHING TIME ( m S) 30 Td(off) 20 TF VDD = 320 V VGE = 5 V TJ = 25C IC = 20 A 3 2 1 0 5000 Td(off) Eoff 10 0 0 1000 2000 3000 4000 4 125 RG, GATE RESISTANCE (OHMS) TC, CASE TEMPERATURE (C) Figure 9. Total Switching Losses versus Gate Resistance Figure 10. Total Switching Losses versus Case Temperature 25 TOTAL SWITCHING ENERGY LOSSES (mJ) VCC = 320 V VGE = 5 V RG = 1000 W L = 200 mH TJ = 125C Eoff 25 20 3 mH 20 20 LATCH CURRENT (AMPS) 16 SWITCHING TIME ( m S) 12 10 mH 15 Td(off) 15 8.0 10 TF 5 5 10 15 10 4.0 5 20 0 0 25 50 75 100 125 IC, COLLECTOR-TO-EMITTER CURRENT (AMPS) TEMPERATURE (C) Figure 11. Total Switching Losses versus Collector Current Figure 12. Latch Current versus Temperature 4 Motorola TMOS Power MOSFET Transistor Device Data MGP20N35CL 1.0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E - 05 1.0E - 04 1.0E - 03 1.0E - 02 t, TIME (s) t2 DUTY CYCLE, D = t1/t2 1.0E - 01 t1 P(pk) RJC(t) = r(t) RJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 1.0E+00 1.0E+01 Figure 13. Thermal Response PACKAGE DIMENSIONS -T- B 4 SEATING PLANE F T S C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 Q 123 A U K STYLE 9: PIN 1. 2. 3. 4. GATE COLLECTOR EMITTER COLLECTOR H Z L V G D N R J CASE 221A-06 (TO-220AB) ISSUE Y Motorola TMOS Power MOSFET Transistor Device Data 5 MGP20N35CL Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 MGP20N35CL/D Motorola TMOS Power MOSFET Transistor Device Data *MGP20N35CL/D* |
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