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| MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TG-9B * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 500V hFE DC current gain............................. 250 Insulated Type APPLICATION Air conditioner, Small to medium size inverters OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 88 8 8 8 8 8 16.5 2-5.4 Tab#250, t=0.8 25 39 BuP EuP BvP EvP BwP EwP P 16 N BuN 16 U BvN 16 76 64 V W BwN E(-) 16 16.5 6 2-R6 6.5 Tab#110, t=0.5 P 26.5 BuP EuP U BuN N BvP EvP V BvN BwP EwP W BwN E(-) 17 LABEL 16 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 450 500 500 7 20 20 100 1 200 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2000 1.47~1.96 15~20 70 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=500V, VEB=2V VCB=500V, Emitter open VEB=7V IC=20A, IB=80mA -IC=20A (diode forward voltage) IC=20A, VCE=2V Min. -- -- -- -- -- -- 250 -- VCC=250V, IC=20A, IB1=120mA, -IB2=0.4A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 2.0 10 2.0 1.25 2.5 0.55 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 Tj=25C 2 IB=400mA 40 IB=200mA IB=80mA IB=10mA 20 IB=20mA 10 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 30 VCE=2.0V Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6 3.0 VCE=2.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 Tj=25C Tj=125C VBE(sat) BASE CURRENT IB (A) SATURATION VOLTAGE VCE(sat) IB=80mA 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 10 1 7 5 4 3 2 10 0 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) ts 3 IC=30A SWITCHING TIME tf ton VCC=250V IB1=120mA IB2=-400mA 2 3 4 5 7 10 2 2 1 0 Tj=25C Tj=125C IC=10A IC=20A 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 2 3 10 -1 10 0 Tj=25C Tj=125C 2 3 4 5 7 10 1 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 VCC=250V 3 IC=20A 2 IB1=120mA Tj=25C Tj=125C -1 10 10 -1 2 3 4 5 7 10 0 REVERSE BIAS SAFE OPERATING AREA 50 Tj=125C COLLECTOR CURRENT IC (A) ts, tf (s) 40 IB2=-3A SWITCHING TIME ts 30 20 tf 10 2 3 4 5 7 10 1 0 0 100 200 300 400 500 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. 100s COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA 50 s D C s DERATING FACTOR (%) 1m 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 2.0 1.8 1.6 20 0 s VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TG-9B MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 2 Tj=25C Tj=125C Irr 2 10 1 Qrr 10 0 trr 10 0 7 5 4 3 2 10 0 2 3 4 5 7 10 1 2 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) 10 1 7 5 4 VCC=250V 3 IB1=120mA 2 IB2=-400mA |
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