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| QS5U12 Transistors Small switching (30V, 2.0A) QS5U12 Features 1) The QS5U12 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. External dimensions (Unit : mm) 1.0MAX 0.850.1 0.70.1 (4) (5) 2.80.2 1.6 0.2 0.1 0 to 0.1 (1) (2) (3) 0.4 +0.1 -0.05 0.16 +0.1 -0.06 Each lead has same dimensions Applications Load switch, DC / DC conversion Abbreviated symbol : U21 Structure Silicon N-channel MOSFET Schottky Barrier DIODE Equivalent circuit (5) (4) Packaging specifications Package Type QS5U12 Code Basic ordering unit (pieces) Taping TR 3000 (1) 2 1 (2) (3) 1 ESD PROTECTION DIODE 2 BODY DIODE (1) Anode (2) Source (3) Gate (4) Drain (5) Cathode Rev.A 0.3 to 0.6 2.90.1 1.90.2 0.95 0.95 1/4 QS5U12 Transistors Absolute maximum ratings (Ta=25C) Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Channel temperature Symbol VDSS VGSS ID IDP IS ISP Tch VRM VR IF IFSM Tj PD Tstg Limits 30 12 2.0 8.0 0.8 3.2 150 25 20 1.0 3.0 150 1.0 -40 to 125 Unit V V A A Pw10s, Duty cycle1% A A Pw10s, Duty cycle1% C V V A A C 60Hz 1cyc. W / Total / Mounted on a ceramic board C Electrical characteristics (Ta=25C) Symbol Min. - 30 - 0.5 - - - 1.5 - - - - - - - - - - Typ. - - - - 71 76 110 - 175 50 25 8 10 21 8 2.8 0.6 0.8 Max. 10 - 1 1.5 100 107 154 - - - - - - - - 3.9 - - IGSS Gate-source leakage Drain-source breakdown voltage V(BR) DSS IDSS Zero gate voltage drain current VGS (th) Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Pulsed RDS (on) Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC Conditions VGS=12V / VDS=0V ID=1mA, / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=2.0A, VGS=4.5V ID=2.0A, VGS=4V ID=2.0A, VGS=2.5V VDS=10V, ID=2.0A VDS=10V VGS=0V f=1MHz ID=1.0A VDD 15V VGS=4.5V RL=15 RGS=10 VDD 15V VGS=4.5V ID=2.0A - - - - - - 1.2 0.45 200 V V A IS=3.2A / VGS=0V IF=1.0A VR=20V Rev.A 2/4 QS5U12 Transistors Electrical characteristic curves STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) VDS=10V Pulsed VGS=4.5V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 10 1000 1000 VGS=4.0V Pulsed Ta=125C Ta=75C Ta=25C Ta= -25C DRAIN CURRENT : ID (A) 1 Ta=125C Ta=75C Ta=25C Ta= -25C 0.1 100 100 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 10 0.1 1 10 10 0.1 1 10 GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Resistance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) Ta=125C Ta=75C Ta=25C Ta= -25C VGS=2.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m) 1000 300 Ta=25C Pulsed 1000 Ta=25C Pulsed 200 ID=2A ID=1A VGS=2.5V VGS=4V VGS=4.5V 100 100 100 10 0.1 1 10 0 0 1 2 3 4 5 6 7 8 9 10 10 0.1 1 10 DRAIN CURRENT : ID (A) GATE-SOURCE VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage Fig.6 Static Drain-Source On-State Resistance vs. Drain Current 10 1000 Ta=125C Ta=75C Ta=25C Ta= -25C VGS=0V Pulsed SOURCE CURRENT : IS (A) Ta=25C f=1MHz VGS=0V 1000 SWITCHING TIME : t (ns) CAPACITANCE : C (pF) 1 100 tf Ta=25C VDD=15V VGS=4.5V RG=10 Pulsed Ciss 100 td (off) td (on) tr 0.1 10 Coss Crss 0.01 0.0 0.5 1.0 1.5 10 0.01 0.1 1 10 100 1 0.01 0.1 1 10 SOURCE-DRAIN VOLTAGE : VSD (V) DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.7 Reverse Drain Current vs. Source-Drain Current Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Switching Characteristics Rev.A 3/4 QS5U12 Transistors 6 1000 100 125C 75C 25C -25C GATE-SOURCE VOLTAGE : VGS (V) FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (mA) Ta=25C VDD=15V 5 ID=2A RG=10 Pulsed 4 125C 10 1 0.1 25C 75C 100 3 2 1 0 10 0.01 0.001 -25C 1 0 1 2 3 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.0001 0 10 20 30 40 TOTAL GATE CHARGE : Qg (nC) FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) Fig.10 Dynamic Input Characteristics Fig.11 Forward Current vs. Forward Voltage Fig.12 Reverse Current vs. Reverse Voltage Measurement circuits Pulse Width 90% VGS ID RL D.U.T. VDS VGS VDS 50% 10% 10% 50% 10% 90% 90% td(off) tf toff RG VDD td(on) ton tr Fig.13 Switching Time Measurement Circuit Fig.14 Switching Waveforms VG VGS ID RL D.U.T. RG VDD VDS Qg VGS Qgs Qgd IG(Const.) Charge Fig.15 Gate Charge Measurement Circuit Fig.16 Gate Charge Waveform Rev.A 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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