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| AP4407F/I Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 14m -50A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D S TO-220FM(F) The TO-220 isolation package is universally preferred for all commercialindustrial applications and suited for low voltage applications such as DC/DC converters and high current ,high speed switching circuits. G D Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 S TO-220CFM(I) Units V V A A A W W/ Rating -30 25 -50 -32 180 33.6 0.27 -55 to 150 -55 to 150 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 3.72 65 Units /W /W Data and specifications subject to change without notice 200305041 AP4407F/I Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. -30 -1 - Typ. -0.01 Max. Units 14 23 -3 -1 -25 100 60 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-24A VGS=-4.5V, ID=-16A 36 35 5 26 11 64 63 100 630 550 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-24A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 25V ID=-24A VDS=-24V VGS=-4.5V VDS=-15V ID=-24A RG=3.3,VGS=-10V RD=0.63 VGS=0V VDS=-25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 2120 3390 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-24A, VGS=0V IS=-24A, VGS=0V, dI/dt=-100A/s Min. - Typ. 39 38 Max. Units -1.2 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP4407F/I 250 150 T C =25 o C 200 -10V -8.0V -ID , Drain Current (A) T C =150 o C -10V -8.0V -6.0V -ID , Drain Current (A) 100 150 -6.0V 100 -4.5V 50 -4.5V 50 V G =-3.0V 0 V G =-3.0V 0 0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 25 1.8 I D = -16 A T C =25 Normalized R DS(ON) 20 1.6 I D =-24A V G =-10V 1.4 RDS(ON) (m ) 1.2 15 1.0 0.8 10 3 5 7 9 11 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3.0 30 2.5 20 -IS(A) T j =150 o C T j =25 o C -VGS(th) (V) 2.0 1.5 10 1.0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.5 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) o Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4407F/I f=1.0MHz 14 10000 -VGS , Gate to Source Voltage (V) 12 I D = - 24 A V DS = -24V C iss C (pF) 10 8 1000 6 C oss C rss 4 2 0 100 0 20 40 60 80 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100 0.2 -ID (A) 0.1 100us 1ms 10 0.1 0.05 PDM 0.02 t T T C =25 C Single Pulse 1 0.1 1 10 o 10ms 100ms DC 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 100 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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