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| AP4924M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D1 G2 S2 D2 D1 D2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 35m 6A SO-8 S1 G1 Description D1 D2 The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. G1 S1 G2 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating 20 12 6 4.8 35 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 20020502 AP4924M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 20 0.5 0.037 35 50 1.2 1 25 - V V/ m m V S uA uA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS=4.5V, ID=6A VGS=2.5V, ID=5.2A 18.5 9 1.8 4.2 6.5 14 20 15 300 255 115 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=250uA VDS=10V, ID=6A VDS=20V, VGS=0V VDS=16V, VGS=0V VGS=12V ID=6A VDS=10V VGS=4.5V VDS=10V ID=1A RG=6,VGS=4.5V RD=10 VGS=0V VDS=8V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 100 nA Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Continuous Source Current ( Body Diode ) Test Conditions VD=VG=0V , VS=1.2V Tj=25, IS=1.7A, VGS=0V Min. Typ. Max. Units 1.67 1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad. AP4924M 25 25 T C =25 C 20 o 4.5V 3.5V 3.0V ID , Drain Current (A) 2.5V T C =150 o C 20 4.5V 3.5V 3.0V ID , Drain Current (A) 15 15 2.5V 10 10 V GS =2.0V 5 V GS =2.0V 5 0 0 1 2 3 4 5 6 0 0 1 2 3 4 5 6 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 45 1.8 40 I D =6A T C =25 1.6 I D =6A V GS =4.5V RDS(ON) (m ) 35 Normalized RDS(ON) 1.4 1.2 30 1.0 25 0.8 20 2 3 4 5 0.6 -50 0 50 100 150 V GS (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature AP4924M 8 3 7 6 2 5 ID , Drain Current (A) 4 3 1 2 1 PD (W) 0 25 50 75 100 125 150 0 50 100 150 0 T c , Case Temperature ( o C) T c ,Case Temperature ( o C) Fig 5. Maximum Drain Current v.s. Fig 6. Typical Power Dissipation Case Temperature 100 1 Duty Factor = 0.5 Normalized Thermal Response (Rthja) 0.2 10 1ms 10ms ID (A) 1 0.1 0.1 0.05 0.02 100ms 1s 0.01 P DM 0.01 t T Single Pulse 0.1 T C =25 o C Single Pulse 0.01 0.1 1 10 10s DC Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =135 oC/W 0.001 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS (V) t , Pulse Width (s) Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance AP4924M 6 1000 f=1.0MHz 5 VGS , Gate to Source Voltage (V) I D =6A V DS =10V Ciss 4 3 C (pF) Coss 100 Crss 2 1 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS (V) Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics 100.00 1.5 10.00 1 T j =150 o C IS(A) 1.00 T j =25 o C VGS(th) (V) 0.5 0.10 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0 -50 0 50 100 150 V SD (V) T j ,Junction Temperature ( o C) Fig 11. Forward Characteristic of Reverse Diode Fig 12. Gate Threshold Voltage v.s. Junction Temperature AP4924M VDS RD 90% D VDS TO THE OSCILLOSCOPE 0.5x RATED VDS RG G 10% + 4..5V S VGS VGS td(on) tr td(off) tf Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform VG VDS TO THE OSCILLOSCOPE QG 4.5V D G S + 0.5 x RATED VDS QGS QGD VGS 1~ 3 mA I G I D Charge Q Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform |
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