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Freescale Semiconductor Technical Data
Document Number: MHW1345N Rev. 3, 5/2006
General Purpose Linear Amplifier Module
Features * 34.5 dB Typical Gain @ 100 MHz * Silicon Bipolar Technology * Class A Operation * Typical ITO = +44 dBm @ 200 MHz * Unconditionally Stable Under All Load Conditions Applications * Driver Amplifier in 50 Ohm Systems Requiring High Linearity * Instrumentation Amplifiers * Return Path Amplifier on CATV Systems Operating in the 10 to 200 MHz Frequency Range * Possible Replacement for CA2830C Description * 24 Vdc Supply, 10 to 200 MHz, General Purpose Linear Amplifier Module * Replaced MHW1345. There are no form, fit or function changes with this part replacement. * RoHS Compliant
MHW1345N
10 - 200 MHz 34.5 dB 800 mW GENERAL PURPOSE LINEAR AMPLIFIER MODULE
CASE 1302 - 01, STYLE 1
Table 1. Maximum Ratings
Rating DC Supply Voltage RF Power Input Operating Case Temperature Range Storage Temperature Range Symbol VCC Pin TC Tstg Value 28 +5 - 20 to +100 - 40 to +100 Unit Vdc dBm C C
Table 2. Electrical Characteristics (TC = 25C, VCC = 24 V, 50 system unless otherwise noted)
Characteristic Frequency Range Gain Flatness (f = 10 - 200 MHz) Power Gain (f = 100 MHz) Noise Figure, Broadband (f = 200 MHz) Power Output -- 1 dB Compression (f = 10 - 200 MHz) Power Output -- 1 dB Compression (f = 10 - 200 MHz, VCC = 28 V) Third Order Intercept (See Figure 2, f1 = 200 MHz) Input/Output VSWR (f = 10 - 200 MHz) Second Harmonic Distortion (Tone at 100 mW, f2H = 150 MHz) Peak Envelope Power (Two Tone Distortion Test -- See Figure 2) (f = 10 - 200 MHz @ - 32 dB IMD) Supply Current Symbol BW GF Gp NF P1dB P1dB ITO VSWR dso PEP Min 10 -- 33.5 -- 630 1000 43 -- -- 600 Typ -- 0.5 34.5 3.8 800 1260 44 1.5:1 - 60 800 Max 200 1 35.5 4.5 -- -- -- 2:1 - 50 -- Unit MHz dB dB dB mW mW dBm -- dB mW
ICC
270
310
330
mA
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MHW1345N 1
RF Device Data Freescale Semiconductor
Table 3. S - Parameters (Biased at 24 Volts, T = 25C Zo = 50)
Frequency (MHz) 10 50 100 200 S11 Mag - 19.3 - 15.6 - 13.2 - 11.1 Ang 45.5 35.0 34.4 30.1 Mag 34.6 34.2 33.9 33.5 S21 Ang - 0.6 - 56.7 - 114 134 Mag - 47.0 - 47.5 - 47.9 - 48.3 S12 Ang 2.3 - 30.3 - 62.9 - 128 Mag - 14.5 - 12.6 - 10.8 - 14.9 S22 Ang 76.8 45.0 10.7 - 42.6
Magnitude in dB, Phase Angle in degrees. PO PIN CONFIGURATION IMD 1 234 56 78 9 INPUT OUTPUT f1 f2 2f2-f1
0.01 F VCC
ITO + P ) IMD @ IMD u 60dB O 2 PEP = 4X PO @ IMD = -32dB
Figure 1. External Connections
Figure 2. Intermodulation Test
MHW1345N 2 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
A Z J A S B V R Q 0.010
M NOTES: 1. DIMENSIONS ARE IN INCHES. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. INCHES MIN MAX --- 1.775 --- 1.085 --- 0.840 0.015 0.021 0.465 0.510 0.300 0.325 0.100 BSC 0.156 BSC 0.315 0.355 1.000 BSC 0.165 BSC 0.100 BSC 0.148 0.168 --- 0.600 1.500 BSC 0.200 BSC --- 0.250 0.435 --- 0.400 BSC 0.152 0.163 0.009 0.011 MILLIMETERS MIN MAX - - - 45.085 - - - 27.559 - - - 21.336 0.381 0.533 11.811 12.954 7.62 8.255 2.540 BSC 3.962 BSC 8.001 9.017 25.400 BSC 4.191 BSC 2.540 BSC 3.759 4.267 --- 15.24 38.100 BSC 5.080 BSC --- 6.350 11.049 --- 10.160 BSC 3.861 4.140 0.229 0.279
2X
TF
M
A
M
F
F
L
2X
2X 6-32UNC-2B
U
0.010 E
M
ZTA
M
12
3
5
789
N
C E K Z W
DIM A B C D E F G J K L N P Q R S U V W X Y Z
X T
2X 4X
G
7X
D
M
P X TA
M
Y
M
0.020
X
0.010
M
ZTA
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. 9.
RF INPUT GROUND GROUND DELETED VDC DELETED GROUND GROUND RF OUTPUT
CASE 1302 - 01 ISSUE E
MHW1345N RF Device Data Freescale Semiconductor 3
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MHW1345N 4Rev. 3, 5/2006
Document Number: MHW1345N
RF Device Data Freescale Semiconductor

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