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| LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon 3 COLLECTOR MMBT4403LT1 3 1 BASE 1 2 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Symbol V CEO V CBO V EBO IC Value - 40 - 40 - 5.0 - 600 Unit Vdc Vdc Vdc mAdc CASE 318-08, STYLE 6 SOT- 23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR -5 Board (1) T A =25 C Derate above 25C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate (2) T A = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 R JA PD 556 300 2.4 417 -55 to +150 Unit mW mW/C C/W mW mW/C C/W C R JA T J , T stg DEVICE MARKING MMBT4403LT1 = 2T ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) Characteristic Symbol V (BR)CEO - 40 V (BR)CBO - 40 V (BR)EBO - 5.0 I BEV -- I CEX -- - 0.1 - 0.1 Adc -- Adc -- Vdc -- Vdc Min Max Unit Vdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (3) (I C = -1.0 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = -0.1mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -0.1mAdc, I C = 0) Base Cutoff Current (V CE = -35 Vdc, V EB = -0.4 Vdc) Collector Cutoff Current (V CE = -35 Vdc, V EB = -0.4 Vdc) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%. O15-1/5 LESHAN RADIO COMPANY, LTD. MMBT4403LT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol hFE 30 60 100 100 20 VCE(sat) -- -- V BE(sat) Min Max Unit -- ON CHARACTERISTICS DC Current Gain (I C = -0.1 mAdc, V CE = -1.0 Vdc) (I C = -1.0 mAdc, V CE = -1.0 Vdc) (I C = -10 mAdc, V CE = -1.0 Vdc) (I C = -150 mAdc, V CE = -2.0 Vdc)(3) (I C = -500 mAdc, V CE = -2.0 Vdc)(3) Collector-Emitter Saturation Voltage(3) (I C = -150mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) Base-Emitter Saturation Voltage (3) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) -- -- -- 300 -- Vdc - 0.4 - 0.75 Vdc - 0.75 -- - 0.95 - 1.3 SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product (I C = -20mAdc, V CE= -10 Vdc, f = 100 MHz) Collector-Base Capacitance (V CB= -10 Vdc, I E = 0, f = 1.0 MHz) Emitter-Base Capacitance (V BE = -0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Small-Signal Current Gain (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= -10 Vdc, I C = -1.0 mAdc, f = 1.0 kHz) fT 200 C cb MHz -- pF -- 8.5 pF -- 30 k 1.5 15 X 10 0.1 8.0 -- 60 500 mhos 1.0 100 -4 C eb h ie h re h fe h oe SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = - 30 Vdc, V EB = -2.0 Vdc, I C = -150mAdc, I B1 = -15 mAdc) (V CC = -30 Vdc, I C = -150 mAdc, I B1 = I B2 = -15 mAdc) td td ts tf -- -- -- -- 15 20 225 30 ns ns 3. Pulse Test: Pulse Width <300 s; Duty Cycle <2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUITS - 30 V 200 +2.0V 0 <2.0 ns < 20 ns + 14V 0 - 30 V 200 1.0 k 1N916 -16 V 1.0 to 100s, DUTY CYCLE = 2% 1.0 k C S* < 10 pF C S*< 10 pF -16 V 1.0 to 100s, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time O15-2/5 LESHAN RADIO COMPANY, LTD. MMBT4403LT1 TYPICAL TRANSIENT CHARACTERISTICS T J = 25C T J = 100C 30 20 10 7.0 5.0 3.0 2.0 C eb Q, CHARGE (nC) V CC = 30 V I C / I B = 10 CAPACITANCE (pF) 10 7.0 5.0 1.0 0.7 0.5 0.3 C cb QT QA 3.0 2.0 0.1 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 10 20 30 50 70 100 200 300 500 REVERSE VOLTAGE (VOLTS) I C , COLLECTOR CURRENT (mA) Figure 3. Capacitance 100 70 50 100 Figure 4. Charge Data I C /I B = 10 t r, RISE TIME (ns) 70 50 V CC= 30V I C / I B =10 t , TIME (ns) 30 20 t r @V CC=30V t r @V CC=10V t d@VBE(off) = 2.0V t d@VBE(off) = 0V 30 20 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 5. Turn-On Time 200 Figure 6. Rise Time I C/I B = 20 t s , RISE TIME (ns) 100 I C/I B = 10 70 50 t s' = t s - 1/8 t f I B1 = I B2 30 20 10 20 30 50 70 100 200 300 500 I C , COLLECTOR CURRENT (mA) Figure 7. Storage Time O15-3/5 LESHAN RADIO COMPANY, LTD. MMBT4403LT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE V CE = -10 Vdc, T A = 25C Bandwidth = 1.0 Hz 10 10 f = 1.0 kHz 8 8 NF, NOISE FIGURE (dB) 6 I C = 1.0 mA, R S = 430 I C = 500 A, R S = 560 I C = 50 A, R S = 2.7k I C = 100 A, R S = 1.6 k NF, NOISE FIGURE (dB) 6 4 4 I C = 50 A 100 A 500 A 1.0 mA 2 RS = OPTIMUM SOURCE RESISTANCE 2 0 0.010.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 0 50 100 200 500 1k 2k 5k 10k 20k 50k f , FREQUENCY (kHz) R S, SOURCE RESISTANCE () Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS (V CE = -10 Vdc, f = 1.0 kHz, T A = 25C) This group of graphs illustrates the relationship between h fe and other "h" parameters for this series of ransistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4401LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 1000 100 h ie, INPUT IMPEDANCE (k) 700 500 50 20 10 5 2 1 0.5 0.2 0.1 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 h fe, CURRENT GAIN 300 200 100 70 50 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mAdc) h re, VOLTAGE FEEDBACK RATIO (X 10 -4 ) I C , COLLECTOR CURRENT (mAdc) Figure 10. Current Gain h oe , OUTPUT ADMITTANCE ( mhos) 20 10 5.0 2.0 1.0 0.5 500 Figure 11. Input Impedance MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 7.0 5.0 10 2.0 3.0 7.0 5.0 10 I C , COLLECTOR CURRENT (mAdc) I C , COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance O15-4/5 LESHAN RADIO COMPANY, LTD. MMBT4403LT1 STATIC CHARACTERISTICS 3.0 h FE , NORMALIZED CURRENT GAIN 2.0 V CE= 1.0 V V CE= 10 V T J = 125C 25C 1.0 -55C 0.7 0.5 0.3 0.2 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 20 300 500 I C , COLLECTOR CURRENT (mA) Figure 14. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 I C=1.0 mA 10 mA 100mA 500mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 I B , BASE CURRENT (mA) Figure 15. Collector Saturation Region 10 + 0.5 T J = 25C V BE(sat) @ I C /I B =10 COEFFICIENT (mV/ C) 0.8 0 VC for VCE(sat) V, VOLTAGE ( VOLTS ) - 0.5 0.6 V BE @ V CE =1.0 V -1.0 0.4 -1.5 0.2 -2.0 V CE(sat) @ I C /I B =10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 VS for V BE - 2.5 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 16. "On" Voltages Figure 17. Temperature Coefficients O15-5/5 |
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