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| SOT89 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 - JANUARY 1996 7 COMPLEMENTARY TYPE - BST15 PARTMAKING DETAIL -- AT2 BST40 C E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE 300 250 5 1 500 1 -65 to +150 UNIT V V V A mA W C ELECTRICAL CHARACTERISTICS (at T amb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cut-Off Current Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Input Capacitance SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO IEBO ICBO VCE(sat) VBE(sat) hFE fT Cobo Cibo 40 70 2 30 MHz pF pF MIN. 300 250 5 10 20 0.5 1.3 MAX. UNIT V V V A nA V V CONDITIONS. IC=100A, IE=0 IC=1mA, IB=0* IE=100A, IC=0 VEB=5V, IE=0 VCB=300V IC=50mA, IB=4mA IC=50mA, IB=4mA IC=20mA, VCE=10V* IC=10mA, VCE=10V, f=5MHz VCB=10V, f=1MHz VEB=5V, f=1MHz * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 78 |
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