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| MITSUBISHI SEMICONDUCTOR M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DESCRIPTION M54566P and M54566FP are seven-circuit collector-currentsynchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. PIN CONFIGURATION INPUT 16 O1 15 O2 14 O3 13 O4 OUTPUT 12 O5 11 O6 10 O7 9 VCC IN1 1 IN2 2 IN3 3 IN4 4 IN5 5 IN6 6 IN7 7 GND 8 FEATURES High breakdown voltage (BVCEO 50V) High-current driving (Ic(max) = 400mA) Active L-level input Wide operating temperature range (Ta = -20 to +75C) 16P4(P) Package type 16P2N-A(FP) APPLICATION Interfaces between microcomputers and high-voltage, highcurrent drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces CIRCUIT DIAGRAM VCC 20K INPUT 8K 7.2K 2.7K OUTPUT FUNCTION The M54566 is produced by adding PNP transistors to M54222 inputs. Seven circuits having active L-level inputs are provided. Resistance of 8k is provided between each input and PNP transistor base. The input emitters are connected to VCC pin (pin 9). Output transistor emitters are all connected to the GND pin (pin 8). Collector current is 400mA maximum. Collector-emitter supply voltage is 50V maximum. These ICs are optimal for drivers that are driven with N-MOS IC output and absorb collector current. The M54566FP is enclosed in a molded small flat package, enabling space-saving design. 3K GND The seven circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit : ABSOLUTE MAXIMUM RATINGS Symbol VCC VCEO IC VI Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Collector current Input voltage Power dissipation Operating temperature Storage temperature (Unless otherwise noted, Ta = -20 ~ +75C) Conditions Output, H Current per circuit output, L Ta = 25C, when mounted on board Ratings 10 -0.5 ~ +50 400 -0.5 ~ VCC 1.47(P)/1.00(FP) -20 ~ +75 -55 ~ +125 Unit V V mA V W C C Aug. 1999 MITSUBISHI SEMICONDUCTOR M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY RECOMMENDED OPERATING CONDITIONS Symbol VCC VO Supply voltage Output voltage Collector current (Current per 1 circuit when 7 circuits are coming on simultaneously) "H" input voltage "L" input voltage VCC = 5V, Duty Cycle P : no more than 10% FP : no more than 6% VCC = 5V, Duty Cycle P : no more than 30% FP : no more than 20% Parameter (Unless otherwise noted, Ta = -20 ~ +75C) min 4 0 0 0 VCC-0.2 0 Limits typ 5 -- -- -- -- -- max 8 50 350 Unit V V IC mA 200 VCC VCC-3 V V VIH VIL ELECTRICAL CHARACTERISTICS Symbol V (BR) CEO VCE (sat) II ICC hFE Parameter (Unless otherwise noted, Ta = -20 ~ +75C) Test conditions ICEO = 100A VI = VCC-3V, IC = 350mA VI = VCC-3V, IC = 200mA VI = VCC-3.5V VCC = 5V, VI = VCC-3.5V VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25C Limits min 50 -- -- -- -- 2000 typ+ -- 1.1 0.9 -0.38 1.4 10000 max -- 2.2 1.6 -0.58 3.0 -- Unit V V mA mA -- Collector-emitter breakdown voltage Collector-emitter saturation voltage Input current Supply current (one circuit coming on) DC amplification factor + : The typical values are those measured under ambient temperature (Ta) of 25C. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25C) Symbol ton toff Parameter Turn-on time Turn-off time CL = 15pF (note 1) Test conditions Limits min -- -- typ 95 2500 max -- -- Unit ns ns NOTE 1 TEST CIRCUIT INPUT VCC Measured device VO TIMING DIAGRAM INPUT 50% 50% RL OUTPUT OUTPUT PG 50 CL 50% 50% ton toff (1) Pulse generator (PG) characteristics : PRR = 1kHz, tw = 10s, tr = 6ns, tf = 6ns, ZO = 50 VI = 1 to 4V (2) Input-output conditions : RL = 30, VO = 10V, VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Aug. 1999 MITSUBISHI SEMICONDUCTOR M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics 400 VCC = 4V VI = 1V Thermal Derating Factor Characteristics 2.0 Power dissipation Pd (W) 1.5 M54566P Collector current Ic (mA) 300 Ta = 75C 1.0 M54566FP Ta = -20C Ta = 25C 200 0.5 100 0 0 25 50 75 100 0 0 0.5 1.0 1.5 2.0 Ambient temperature Ta (C) Duty-Cycle-Collector Characteristics (M54566P) 500 500 Output saturation voltage VCE (sat) (V) Duty-Cycle-Collector Characteristics (M54566P) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 75C 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 25C 100 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54566FP) 500 500 Duty cycle (%) Duty-Cycle-Collector Characteristics (M54566FP) Collector current Ic (mA) Collector current Ic (mA) 400 400 300 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *The value in the circle represents the value of the simultaneously-operated circuit. *VCC = 5V *Ta = 25C 300 100 200 *The collector current values represent the current per circuit. *Repeated frequency 10Hz *VCC = 5V *The value in the circle represents the value of the simultaneously-operated circuit. *Ta = 75C 100 0 0 20 40 60 80 100 0 0 20 40 60 80 100 Duty cycle (%) Duty cycle (%) Aug. 1999 MITSUBISHI SEMICONDUCTOR M54566P/FP 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY DC Amplification Factor Collector Current Characteristics 104 7 Vcc = 4V VCE = 4V Grounded Emitter Transfer Characteristics 400 Vcc = 4V VCE = 4V Ta = 75C DC amplification factor hFE 5 3 2 Collector current Ic (mA) Ta = 75C Ta = 25C Ta = -20C 300 Ta = 25C Ta = -20C 103 7 5 3 2 200 100 102 1 10 2 3 5 7 102 2 3 5 7 103 0 0 0.4 0.8 1.2 1.6 Collector current Ic (mA) Supply voltage-Input voltage VCC-VI (V) Input Characteristics -1.0 Vcc = 8V Supply Current Characteristics 5 VI = 0V Supply current Icc (mA) -0.8 4 Ta = -20C Ta = 25C Input current II (mA) -0.6 Ta = -20C Ta = 25C 3 -0.4 Ta = 75C 2 Ta = 75C -0.2 1 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Supply voltage-Input voltage VCC-VI (V) Supply voltage VCC (V) Aug. 1999 |
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