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| RF2155 2 Typical Applications * Analog Communication Systems * 900MHz Spread Spectrum Systems * 400MHz Industrial Radios * Driver Stage for Higher Power Applications * 3V Applications 3V PROGRAMMABLE GAIN POWER AMPLIFIER 2 POWER AMPLIFIERS Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM applications operating at 915MHz. The device is self-contained with the exception of the output matching network and power supply feed line. A two-bit digital control provides 4 levels of power control, in 8dB steps. 0.158 0.150 0.021 0.014 -A0.009 0.004 0.392 0.386 0.069 0.064 0.050 0.244 0.230 8 MAX 0 MIN 0.010 0.008 0.060 0.054 0.035 0.016 Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: Standard Batwing GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Single 3V Supply * 500mW CW Output Power * 31dB Small Signal Gain * Up to 60% Efficiency * Digitally Controlled Output Power * 430MHz to 930MHz Frequency Range NC VCC1 VCC2 GND GND GND1 RF IN PD 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 G16 G8 RF OUT GND GND RF OUT NC NC Ordering Information RF2155 RF2155 PCBA 3V Programmable Gain Power Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev B3 010417 2-179 RF2155 Absolute Maximum Ratings Parameter Supply Voltage Power Down Voltage (VPD) DC Supply Current Input RF Power Output Load VSWR Ambient Operating Temperature Storage Temperature Rating -0.5 to +5.5 -0.5 to +3.3 500 +10 10:1 -30 to +85 -40 to +150 Unit VDC V mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Maximum CW Output Power Small Signal Gain Second Harmonic Third Harmonic Fourth Harmonic Input VSWR CW Efficiency Output Load VSWR Specification Min. Typ. Max. Unit Condition T=25 C, VCC =3.6V, VPD =3.0V, ZLOAD =13, PIN =0dBm, Freq=915MHz 50 6:1 2.7 0 2.2 0 0.8 +25.5 +16.0 +8.0 -1.0 430 to 930 450 300 31 -30 -40 -36 2:1 56 MHz mW mW dB dBc dBc dBc % VCC =3.6V VCC =3.0V Without external second harmonic trap All gain settings G16="high", G8="high", PIN =0dBm Spurious<-60dBc Voltage supplied to the input Voltage supplied to the input Only in "ON" state Voltage supplied to the input Voltage supplied to the input Only in "ON" state G16="high", G8="high", PIN =0dBm G16="high", G8="low", PIN =0dBm G16="low", G8="high", PIN =0dBm G16="low", G8="low", PIN =0dBm Power Control Power Down "ON" Power Down "OFF" PD Input Current G16, G8 "ON" G16, G8 "OFF" G16, G8 Input Current Output Power 2.8 0.5 3.7 2.5 0.3 1.0 +26.5 +18.5 +10.5 +1.5 3.0 0.8 5.0 3.0 0.5 1.6 +28.0 +21.0 +13.0 +4.0 100 V V mA V V mA dBm dBm dBm dBm ns V V mA mA mA mA mA A Turn On/Off Time Power Supply Power Supply Voltage 3.0 Power Supply Current 225 90 37 25 50 1 3.6 5.0 300 115 55 35 110 10 Specifications Operating limits G16="high", G8="high", PIN =0dBm G16="high", G8="low", PIN =0dBm G16="low", G8="high", PIN =0dBm G16="low", G8="low", PIN =0dBm G16="high", G8="high", No RF In G16="low", G8="low", PD="low" 20 2-180 Rev B3 010417 RF2155 Pin 1 2 Function NC VCC1 Description Not internally connected. Positive supply for the first stage (driver) amplifier. This is an unmatched transistor collector output. This pin should see an inductive path to AC ground (VCC with a UHF bypassing capacitor). This inductance can be achieved with a short, thin microstrip line (approximately equivalent to 0.4nH). At lower frequencies, the inductance value should be larger (longer microstrip line) and VCC should be bypassed with a larger bypass capacitor. This inductance forms a matching network with the amplifier stages, setting the amplifier's frequency of maximum gain. An additional 1F bypass capacitor in parallel with the UHF bypass capacitor is also recommended, but placement of this component is not as critical. A resistor of 39 from this pin to pin 3 is necessary to ensure stability under extreme output VSWR conditions. Positive supply for the bias circuits. This pin should be bypassed with a single UHF capacitor, placed as close as possible to the package. Ground connection. Keep traces physically short and connect immediately to the ground plane for best performance. Same as pin 4. Ground return for the first stage; this should be connected to a via very close to the device. Amplifier RF input. This is a 50 RF input port to the amplifier. To improve the input match over all four gain control settings, an input inductor of 6.8nH should be added. The amplifier does not contain internal DC blocking and, therefore, should be externally DC blocked before connecting to any device which has DC present or which contains a DC path to ground. A series UHF capacitor is recommended for the DC blocking. Power down control voltage. When this pin is at 0V, the device will be in power down mode, dissipating minimum DC power. When this pin is at 3V the device will be in full power mode delivering maximum available gain and output power capability. This pin should not, in any circumstance, be higher than 3.3V. This pin should also have an external UHF and HF bypassing capacitor. Not internally connected. Not internally connected. Amplifier RF output. This is an unmatched collector output of the final amplifier transistor. It is internally connected to pins 11 and 14 to provide low series inductance and flexibility in output matching. Bias for the final power amplifier output transistor must also be provided through one of these pins. Typically, pin 14 is used to supply bias. A transmission line of approximately 500mils length, followed by a bypass capacitor, is adequate. This pin can also be used to create a second harmonic trap. A UHF and large tantalum (1F) capacitor should be placed on the power supply side of the bias inductor. Pin 11 should be used for the RF output with a matching network that presents the optimum load impedance to the PA for maximum power and efficiency, as well as providing DC blocking at the output. Same as pin 4. Same as pin 4. Same as pin 11. RF output power gain control 8dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. VCC2 RF OUT Interface Schematic VCC1 RF IN From Bias Stages 2 POWER AMPLIFIERS 3 4 5 6 7 VCC2 GND GND GND1 RF IN See pin 2. 8 PD PD To RF Stages 9 10 11 NC NC RF OUT From Bias Stages 12 13 14 15 GND GND RF OUT G8 Gxx To RF Stages Rev B3 010417 2-181 RF2155 Pin 16 Function G16 Description RF output power gain control 16dB bit (see specification table for logic). The control voltage at this pin should never exceed 3.3V and a logic high should be at least 2.7V. This pin should also have an external UHF bypassing capacitor. Interface Schematic Same as pin 15. 2 POWER AMPLIFIERS VCC Application Schematic 915 MHz 33 pF 1 W=20, L=180 mil 33 pF 2 39 3 Board Material: FR-4 (Er=4.7) h=30 mil Impedances are critical at pin 2, 7, 11, and 14 33 pF 6.8 nH RF In Power Down 33 pF 7 8 10 9 33 pF 4 5 6 14 33 pF 13 12 W=55, L=330 mil 11 3.9 pF 50 33 pF RF Out 15 W=20, L=570 mil VCC 8 dB Ctrl 16 33 pF 16 dB Ctrl 2-182 Rev B3 010417 RF2155 Evaluation Board Schematic (Download Bill of Materials from www.rfmd.com.) P1 P1-1 1 2 P1-3 3 VB2 GND PD P2-3 P2-1 P2 1 2 3 VCC GND VB1 2 POWER AMPLIFIERS 2155400 Rev - C14 1 F P2-1 1 2 R1 39 C4 33 pF 3 4 5 16 15 14 13 12 11 10 9 C10 3.9 pF C2 33 pF C12 1 nF L=570 mil, W=20 mil C7 33 pF C8 33 pF P2-3 C13 1 F C6 1 nF C5 33 pF P1-1 L=330 mil, W=55 mil C2 33 pF 50 strip RF IN J1 P1-3 50 strip C1 33 pF L1 6.8 nH 6 7 8 RF OUT J2 C9 1 nF C3 33 pF Rev B3 010417 2-183 RF2155 Evaluation Board Layout Board Size 2.0" x 2.0" 2 POWER AMPLIFIERS 2-184 Rev B3 010417 RF2155 Pout and Icc vs. Pin, State 11 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 30 Pout 25 Icc 250 20 Icc 15 200 300 25 Pout 250 Pout and Icc vs. Pin, State 10 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 300 Pout (dBm) Pout (dBm) 20 200 2 Icc (mA) Icc (mA) 10 150 15 150 5 100 10 100 0 50 5 -20 -15 -10 -5 0 5 10 50 -5 -20 -15 -10 -5 0 5 10 0 Pin (dBm) Pin (dBm) Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 20 Pout 15 Icc 10 200 0 250 5 300 10 Pout and Icc vs. Pin, State 01 (915 MHz, Vcc=3.6 V, Vpd=3.0 V) 300 Pout 250 Icc 200 Pout (dBm) Pout (dBm) Icc (mA) 5 150 -5 150 0 100 -10 100 -5 50 -15 50 -10 -20 -15 -10 -5 0 5 10 0 -20 -20 -15 -10 -5 0 5 10 0 Pin (dBm) Pin (dBm) Pout and Efficiency vs. Vcc, Full Gain (915 MHz, Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 Pout Efficiency 29 57.0 20 25 60.0 30 Pout vs. Temperature, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Bit1=1;Bit2=1 Bit1=1;Bit2=0 Pout (dBm) Pout (dBm) 28 54.0 Efficiency (%) 15 27 51.0 10 Bit1=0;Bit2=1 5 26 48.0 0 Bit1=0;Bit2=0 25 3.0 3.5 4.0 4.5 5.0 5.5 45.0 -5 -25 -5 15 35 55 75 95 Vcc (Volts) Temperature (C) Rev B3 010417 2-185 Icc (mA) POWER AMPLIFIERS RF2155 Pout vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) 30 Bit1=1;Bit2=1 25 200 20 Bit1=1;Bit2=1 250 Icc vs. Frequency, All Gain Settings (Pin=0 dBm, Vcc=3.6 V, Vpd=3.0 V) Pout (dBm) 2 POWER AMPLIFIERS Bit1=1;Bit2=0 10 Bit1=0;Bit2=1 Icc (mA) 15 150 100 Bit1=1;Bit2=0 5 Bit1=0;Bit2=0 0 Bit1=0;Bit2=0 -5 870 880 890 900 910 920 930 940 950 960 0 870 880 890 900 910 920 930 940 950 960 50 Bit1=0;Bit2=1 Frequency (MHz) Frequency (MHz) 2-186 Rev B3 010417 |
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