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Ordering number : ENN8323
SCH2602
N-Channel and P-Channel Silicon MOSFETs
SCH2602
Features
*
General-Purpose Switching Device Applications
* *
The SCH2602 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON- resistance and high-speed switching, thereby enabling high-density mounting. Low ON-resistance. 2.5V drive (N-ch), 1.8V drive (P-ch).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Conditions N-channel 30 10 0.35 1.4 0.6 150 --55 to +150 P-channel -12 10 --1.5 --6 Unit V V A A W C C
Electrical Characteristics at Ta=25C
Parameter [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 ID=1mA, VGS=0V VDS=30V, VGS=0V VGS=8V, VDS=0V VDS=10V, ID=100A VDS=10V, ID=80mA ID=80mA, VGS=4V ID=40mA, VGS=2.5V ID=10mA, VGS=1.5V 30 10 10 0.4 130 220 2.9 3.7 6.4 3.7 5.2 12.8 1.3 V A A V mS Symbol Conditions Ratings min typ max Unit
Marking : FB
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PE MS IM TA-100972 No.8323-1/6
SCH2602
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage [P-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=8V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--0.8A ID=--0.8A, VGS=-4.5V ID=--0.4A, VGS=-2.5V ID=--0.1A, VGS=-1.8V ID=--50mA, VGS=--1.5V VDS=--6V, f=1MHz VDS=--6V, f=1MHz VDS=--6V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--6V, VGS=--4.5V, ID=-1.5A VDS=--6V, VGS=--4.5V, ID=-1.5A VDS=--6V, VGS=--4.5V, ID=-1.5A IS=--1.5A, VGS=0V --0.3 1.1 1.8 235 335 445 750 160 45 35 11 45 29 30 2.6 0.25 0.65 --0.92 --1.5 310 470 670 1250 --12 --10 10 --1.0 V A A V S m m m m pF pF pF ns ns ns ns nC nC nC V Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA VDS=10V, VGS=4V, ID=150mA IS=150mA, VGS=0V Ratings min typ 7.0 5.9 2.3 19 65 155 120 1.58 0.26 0.31 0.87 1.2 max Unit pF pF pF ns ns ns ns nC nC nC V
Static Drain-to-Source On-State Resistance
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage
Package Dimensions unit : mm 7028-007
1.6
Electrical Connection
6
5
4
0.05
0.2
654
0.2
1 : Source1 2 : Gate2 3 : Source2 4 : Gate1 / Drain2 5 : Drain1 6 : Drain1
Top view
1.6
1.5
0.05
1
23 0.5
0.56
1
2
3
1 : Source1 2 : Gate2 3 : Source2 4 : Gate1 / Drain2 5 : Drain1 6 : Drain1 SANYO : SCH6
0.25
No.8323-2/6
SCH2602
Switching Time Test Circuit [N-channel]
VDD=15V VIN VIN ID=80mA RL=187.5 VIN VIN
[P-channel]
VDD= --6V ID= --0.8A RL=7.5
4V 0V
D
VOUT
0V --4.5V
D
VOUT
PW=10s D.C.1%
PW=10s D.C.1%
G
G
P.G
50
SCH2602
P.G
S
50
SCH2602
S
0.16 0.14 0.12 0.10 0.08
ID -- VDS
2. 5V
[Nch]
0.30
ID -- VGS
Ta= --25 C
[Nch]
VDS=10V
V
3.5V 4.0V
6.0 V
3.0
2.0
V
Drain Current, ID -- A
0.25
Drain Current, ID -- A
0.15
VGS=1.5V
0.06 0.04 0.02 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0.10
0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT00030
Drain-to-Source Voltage, VDS -- V
10 9
IT00029
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
[Nch] Ta=25C
RDS(on) -- ID
Ta =
0.05
75 --2 C 5C
25 C
75 C
0.20
25
C
[Nch] VGS=4V
Static Drain-to-Source On-State Resistance, RDS(on) --
Static Drain-to-Source On-State Resistance, RDS(on) --
7
8 7 6
5
Ta=75C
3
80mA
5
25C --25C
ID=40mA
4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00032
Gate-to-Source Voltage, VGS -- V
10
IT00031
RDS(on) -- ID
Drain Current, ID -- A
100 7
[Nch] VGS=2.5V
RDS(on) -- ID
[Nch] VGS=1.5V
Static Drain-to-Source On-State Resistance, RDS(on) --
7
Static Drain-to-Source On-State Resistance, RDS(on) --
5 3 2
5
Ta=75C 25C
3
--25C
10 7 5 3 2
Ta=75C --25C 25C
2
1.0 0.01
2
3
5
7
0.1
2
3
5 IT00033
1.0 0.001
2
3
5
7
0.01
2
3
5 IT00034
Drain Current, ID -- A
Drain Current, ID -- A
No.8323-3/6
SCH2602
7
RDS(on) -- Ta
[Nch]
Forward Transfer Admittance, yfs -- S
1.0 7 5
yfs -- ID
[Nch] VDS=10V
Static Drain-to-Source On-State Resistance, RDS(on) --
6
25C
3 2
5
4
3
40 S= I D= A, VG 80m I D=
,V mA
= GS
V 2.5
Ta=
C --25
75C
4.0V
0.1 7 5 3 2
2
1 0 --60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- C
1.0 7 5
0.01 0.01
2
3
5
7
0.1
2
3
5 IT00036
IT00035
IS -- VSD
Drain Current, ID -- A
1000 7
[Nch] VGS=0V
Switching Time, SW Time -- ns
SW Time -- ID
5 3 2
[Nch] VDD=15V VGS=4V
Source Current, IS -- A
3 2
Ta =7 5 C 25 C --2 5C
td (off) tf
0.1 7 5 3 2
100 7 5 3 2
tr
td(on)
0.01 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2 IT00037
10 0.01
2
3
5
7
0.1
2 IT00038
100 7 5
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
10 9
[Nch] f=1MHz
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
[Nch]
VDS=10V ID=150mA
8 7 6 5 4 3 2 1
Ciss, Coss, Crss -- pF
3 2
10 7 5 3 2
Ciss Coss
Crss
1.0 0 2 4 6 8 10 12 14 16 18 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
ASO
[Nch] <10s
1m s
3 2 1.0
IDP=1.4A
Drain Current, ID -- A
7 5 3 2 0.1 7 5 3 2
ID=0.35A
10m
s
DC
Operation in this area is limited by RDS(on).
100
ope
ms
ion
rat
0.01 1.0
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 10 2 3 5 IT03292
Drain-to-Source Voltage, VDS -- V
No.8323-4/6
SCH2602
Ta= --25 C 25 75C C
--1.5
ID -- VDS
--4
[Pch]
--2.0
ID -- VGS
[Pch] VDS= --6V
VV .5 3.0 2.5V --3 ---
--1.2
.5
V
Drain Current, ID -- A
--0.9
--1.8
V
Drain Current, ID -- A
--1.5
--1.5V
--0.6
--1.0
--0.5
--0.3
VGS= --1.0V
0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 IT04353 0 --0.5
--1.0
Ta= 75 C 25 --2 5C C
--1.5
--2.0
--2.5
--3.0 IT04354
Drain-to-Source Voltage, VDS -- V
800
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
800
[Pch] Ta=25C
RDS(on) -- Ta
[Pch]
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600
Static Drain-to-Source On-State Resistance, RDS(on) -- m
700 600 500 400 300 200 100 0 --60
--0.8A
500 400 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 --8
ID= --0.4A
8V = --1. A, VGS 0.1 I D= -V = --2.5 , V GS --0.4A I D= = --4.5V A, V GS I D= --0.8
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
5
yfs -- ID
IT04355
Ambient Temperature, Ta -- C
5 3
IT04356
[Pch] VDS= --6V
IS -- VSD
[Pch] VGS=0V
Forward Transfer Admittance, yfs -- S
3
2
1.0 7 5 3 2
5C
-2 =C Ta 75
C 5
Source Current, IS -- A
2
2
--1.0 7 5
C 25C
3 2
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
--0.1 --0.4
--0.6
Ta=7 5
--0.8
--25C
--1.0
--1.2
--1.4 IT04358
Drain Current, ID -- A
3 2
IT04357
SW Time -- ID
[Pch]
5 3
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Pch] f=1MHz
VDD= --6V VGS= --4.5V
Switching Time, SW Time -- ns
100 7 5 3 2
tr
td(off)
tf
Ciss, Coss, Crss -- pF
2
Ciss
100 7 5 3 2
td(on)
10 7 5 3 2 --0.1
Coss
Crss
10 2 3 5 7 --1.0 2 3 0 --2 --4 --6 --8 --10 --12 IT04360
Drain Current, ID -- A
IT04359
Drain-to-Source Voltage, VDS -- V
No.8323-5/6
SCH2602
--4.5 --4.0 --3.5
VGS -- Qg
VDS= --6V ID= --1.5A
[Pch]
--10 7 5 3 2
ASO
IDP= --6.0A
10
[Pch] <10s
Gate-to-Source Voltage, VGS -- V
1m
ID= --1.5A
ms
s
Drain Current, ID -- A
--3.0 --2.5 --2.0 --1.5 --1.0 --0.5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IT04361
--1.0 7 5 3 2 --0.1 7 5 3 2
DC
Operation in this area is limited by RDS(on).
10
0m
op
s
era
tio
n
--0.01 --0.1
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
2 3 5 7 --1.0 2 3 5
Total Gate Charge, Qg -- nC
1.0
PD -- Ta
Drain-to-Source Voltage, VDS -- V
7 --10 2 IT04362
[Nch, Pch]
Allowable Power Dissipation, PD -- W
0.8
M
ou
nte
do
0.6
na
ce
ram
ic
bo
0.4
ard
(90
0m
m2 !0
0.2
.8m
m)
1u
nit
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- C
IT03293
Note on usage : Since the SCH2602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8323-6/6

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