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| Si4416DY Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 D TrenchFETr Power MOSFET ID (A) 9.0 7.3 rDS(on) (W) 0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V D SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4416DY SI4416DY-T1 (with Tape and Reel) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS 10 secs 30 "20 9.0 Steady State Unit V 6.9 5.6 50 A 1.2 1.4 0.9 - 55 to 150 W _C ID IDM IS PD TJ, Tstg 7.5 2.1 2.5 1.6 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72266 S-31062--Rev. E, 26-May-03 www.vishay.com Steady-State Steady-State RthJA RthJF Symbol Typ 40 72 16 Max 50 90 20 Unit _C/W C/W 1 Si4416DY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 9.0 A VGS = 4.5 V, ID = 7.3 A VDS = 15 V, ID = 9.0 A IS = 2.1 A, VGS = 0 V 20 0.012 0.019 23 1.2 0.018 0.028 1 "100 1 25 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgt Qgs Qgd Rg td(on) tr td(off) tf trr IF = 2.1 A, di/dt = 100 A/ms VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W 0.2 VDS = 15 V, VGS = 10 V, ID = 9.0 A , , VDS = 15 V, VGS = 5 V, ID = 9.0 A 14 24 4.5 5.9 1.0 16 10 34 13 50 2.4 20 20 50 20 90 ns W 20 35 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 5 V 40 I D - Drain Current (A) 4V 30 I D - Drain Current (A) 40 50 Transfer Characteristics 30 20 20 TC = 125_C 10 25_C - 55_C 10 3V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72266 S-31062--Rev. E, 26-May-03 www.vishay.com 2 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.10 1800 Capacitance r DS(on) - On-Resistance ( W ) 0.08 C - Capacitance (pF) 1500 Ciss 1200 0.06 900 0.04 VGS = 4.5 V 0.02 VGS = 10 V 600 Coss 300 Crss 0.00 0 10 20 30 40 50 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 9 A 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 9 A 6 r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 8 1.4 1.2 4 1.0 2 0.8 0 0 5 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 60 0.10 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 I S - Source Current (A) 0.06 ID = 9 A 0.04 TJ = 25_C 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Document Number: 72266 S-31062--Rev. E, 26-May-03 www.vishay.com 3 Si4416DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 50 Single Pulse Power 0.2 ID = 250 mA V GS(th) Variance (V) - 0.0 Power (W) 40 30 - 0.2 20 - 0.4 10 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 150 0 10 -2 10 -1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA = 72_C/W Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 72266 S-31062--Rev. E, 26-May-03 |
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