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| SI7901EDN New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.048 @ VGS = -4.5 V -20 0.068 @ VGS = -2.5 V 0.090 @ VGS = -1.8 V FEATURES ID (A) -6.3 -5.3 -4.6 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 4500 V D Ultra-Low Thermal Resistance, PowerPAKt Package with Low 1.07-mm Profile APPLICATIONS D Bidirectional Switch PowerPAKt 1212-8 S1 S2 3.30 mm S1 1 2 3.30 mm G1 S2 3 4 D1 G2 G1 3 kW G2 3 kW 8 7 D1 D2 6 5 D2 D1 P-Channel MOSFET D2 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C ID TA = 85_C IDM IS -2.3 2.8 1.5 -55 to 150 -4.5 -20 -1.1 1.3 0.7 W _C -3.1 A Symbol VDS VGS 10 secs Steady State -20 "12 Unit V -6.3 -4.3 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71430 S-03710--Rev. A, 14-May-01 www.vishay.com Steady State Steady State RthJA RthJC Symbol Typical 35 75 4 Maximum 44 94 5 Unit _C/W C/W 1 SI7901EDN Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = -800 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "12 V VDS = -16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = -16 V, VGS = 0 V, TJ = 85_C VDS v -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -6.3 A Drain-Source On-State Resistancea rDS(on) VGS = -2.5 V, ID = -5.3 A VGS = -1.8 V, ID = -1 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -15 V, ID = -6.3 A IS = -2.3 A, VGS = 0 V -20 0.041 0.057 0.072 14 -0.8 -1.2 0.048 0.068 0.090 S V W -0.45 "1.5 "10 -1 -5 V nA mA mA m A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = -10 V, RL = 10 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W VDS = -10 V, VGS = -4.5 V, ID = -6.3 A 12 2.5 2.9 2.5 4 15 12 4 6 23 18 ms m 18 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 1,000 I GSS - Gate Current (mA) 6 I GSS - Gate Current (mA) 100 10 1 0.1 Gate Current vs. Gate-Source Voltage TJ = 150_C 4 2 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) www.vishay.com VGS - Gate-to-Source Voltage (V) Document Number: 71430 S-03710--Rev. A, 14-May-01 2 SI7901EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 25_C 125_C 12 20 TC = -55_C Vishay Siliconix Transfer Characteristics 12 2V 8 1.5 V 4 8 4 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 VGS = 1.8 V C - Capacitance (pF) 2000 Capacitance r DS(on) - On-Resistance ( W ) 0.12 1600 Ciss 0.09 VGS = 2.5 V 0.06 VGS = 4.5 V 0.03 1200 800 400 Coss Crss 0 4 8 12 16 20 0.00 0 4 8 12 16 20 0 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 6.3 A 1.5 On-Resistance vs. Junction Temperature r DS(on) - On-Resistance (W) (Normalized) 4 VGS = 4.5 V ID = 6.3 A 1.3 3 1.1 2 0.9 1 0 0 2 4 6 8 10 12 14 0.7 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Document Number: 71430 S-03710--Rev. A, 14-May-01 www.vishay.com 3 SI7901EDN Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 0.14 0.12 10 I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.10 0.08 0.06 0.04 0.02 1 0 0.3 0.6 0.9 1.2 1.5 1.8 0.00 0 1 2 3 4 5 ID = 6.3 A On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 800 mA 50 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 40 0.2 Power (W) 30 0.1 20 0.0 10 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 2. Per Unit Base = RthJA = 75_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71430 S-03710--Rev. A, 14-May-01 SI7901EDN New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.02 0.1 0.05 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 71430 S-03710--Rev. A, 14-May-01 www.vishay.com 5 |
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