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Semiconductor
THN420Z
SiGe NPN Transistor
SOT-343
Unit in mm
Applications
- Low noise amplifier, oscillator and buffer amplifier up to 3 GHz
1
3
Features
- High gain bandwidth product fT = 17 GHz at VCE = 2 V, IC = 15 mA fT = 20 GHz at VCE = 3 V, IC = 30 mA - High power gain |S21|2 = 16 dB at VCE = 2 V, IC = 15 mA, f = 1.5 GHz - Low noise figure NF = 1.1 dB at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
2 4
Pin Configuration
1. Base 2. Emitter 3. Emitter 4. Collector
Absolute Maximum Ratings (TA = 25 )
Parameter Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Current Total Power Dissipation Operating Junction Temperature Storage Temperature Symbol BVCBO BVCEO BVEBO IC Ptot Tj Tstg Ratings 10 4.5 1.5 35 160 150 -65 ~ 150 Unit V V V mA mW
Caution : Electro Static Discharge sensitive device
1
THN420Z
Electrical Characteristics (TA = 25 )
Parameter Collector Cut-off Current Symbol ICBO ICEO Emitter Cut-off Current DC Current Gain Gain Bandwidth Product IEBO hFE fT Test Conditions VCB = 9 V, IE = 0 mA VCE = 3 V, IB = 0 mA VEB = 1 V, IC = 0 mA VCE = 2 V, IC = 20 mA VCE = 2 V, IC = 15 mA VCE = 3 V, IC = 30 mA Maximum Available Gain MAG VCE = 2 V, IC = 15 mA, f = 1 GHz VCE = 2 V, IC = 15 mA, f = 1.5 GHz Insertion Power Gain |S21|2 VCE = 2 V, IC = 15 mA, f = 1 GHz VCE = 2 V, IC = 15 mA, f = 1.5 GHz Noise Figure Collector - Base Capacitance NF CCB VCE = 3 V, IC = 5 mA, f = 1.8 GHz VCB = 2 V, IE = 0 mA, f = 1 MHz Min. 50 15 18 20 18 17 14 Typ. 17 20 22 20 19 16 1.1 0.24 Max. 1.0 1.0 0.5 260 1.3 GHz GHz dB dB dB dB dB pF Unit
hFE Classification
Marking hFE Value BE1 50 - 150 BE2 130 - 260
2
THN420Z
Typical Characteristics ( TA = 25 , unless otherwise specified)
Power Dissipation vs. Ambient Temperature
Collector to Base Capacitance, CCB (pF)
200
Collector to Base Capacitance vs. Collector to Base Voltage
0.5 f = 1 MHz 0.4
Total Power Dissipation, PC (mW)
150
0.3
100
0.2
50
0.1
0 0 25 50 75 100
o
125
150
0.0 0 1 2 3 4 5
Ambient Temperature, TA ( C)
Collector to Base Voltage, VCB (V)
DC Current Gain vs. Collector Current
200 180 VCE = 2 V
Collector Current vs. Base to Emitter Voltage
40 35
Collector Current, IC (mA)
DC Current Gain, hFE
160 140 120 100 80 60 40 20 0 1 10 100
VCE = 2 V 30 25 20 15 10 5 0 0.0
0.2
0.4
0.6
0.8
1.0
Collector Current, IC (mA)
Base to Emitter Voltage, VBE (V)
3
THN420Z
Collector Current vs. Collector to Emitter Voltage
70 60 50 40 30 20 10 0 0 1 2 3 4
Gain Bandwidth Product vs. Collector Current
30
Gain Bandwidth Product, fT (GHz)
Collector Current, IC (mA)
25 20 15 10 5 0 0 5
VCE = 2 V VCE = 3 V
IB = 400 A IB = 300 A IB = 200 A IB = 100 A
10
15
20
25
30
35
40
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
Maximum Available Gain vs. Collector Current
30
Insertion Power Gain vs. Collector Current
25 VCE = 2 V VCE = 3 V f = 1 GHz f = 1.5 GHz 15 f = 2 GHz 10
Maximum Available Gain, MAG (dB)
25 20 15
f = 1 GHz f = 1.5 GHz
Insertion Power Gain, |S21| (dB)
VCE = 2 V VCE = 3 V
f = 2 GHz 10 5 0 1 10 100
2
20
5
0 1 10 100
Collector Current, IC (mA)
Collector Current, IC (mA)
4
THN420Z
Power Gain vs. Frequency
30 VCE = 2 V IC = 5 mA MSG 30 VCE = 2 V IC = 15 mA MSG
25
25
Gain (dB)
Gain (dB)
20
20 MAG 15 |S21| 10
2
15 |S21| 10
2
MAG
5 0.0
0.5
1.0
1.5
2.0
2.5
3.0
5 0.0
0.5
1.0
1.5
2.0
2.5
3.0
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Collector Current at VCE = 2 V, IC =parameters, ZS = ZSopt
3.0 f = 1.8 GHz
Noise Figure and Associated Gain Contours at VCE = 2 V, IC = 5 mA, f = 1.8 GHz
Output Stable
Noise Figure, NF (dB)
2.5 2.0 1.5
Ga=17dB
Input Stable
1.0 0.5 0.0 0 5 10 15 20 25 30 35 40
=16dB =15dB =14dB =13dB 5 contour
opt = 0.15592 Fmin =1.05dB =1.1dB =1.2dB =1.3dB 4 contour
Collector Current, IC (mA)
5

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