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AOL1440 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1440 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion. Standard Product AOL1440 is Pb-free (meets ROHS & Sony 259 specifications). AOL1440L is a Green Product ordering option. AOL1440 and AOL1440L are electrically identical.
Features Features
VDS (V) = 25V VDS (V) = 25V IID = 75A (VGS = 10V) D = 75A (VGS = 10V) RDS(ON) < 3.2m (VGS = 20V) RDS(ON) < 3.2m (VGS = 20V) RDS(ON) < 4.0mW (V GS 10V) RDS(ON) < 4.0m (VGS ==12V) RDS(ON) < 5.2mW (V GS 12V) RDS(ON) < 5.2m (VGS ==10V) UIS Tested UIS Tested Rg,Ciss,Coss,Crss Tested Rg,Ciss,Coss,Crss Tested
Ultra SO-8TM Top View D
Fits SOIC8 footprint !
D
S
Bottom tab connected to drain G
G
S
Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Drain-Source Voltage 25 VDS 30 Gate-Source Voltage VGS Continuous Drain Current B,G, Pulsed Drain Current Continuous Drain G Current Avalanche Current C
C
Units V V A
TC=25C
G B
85 ID IDM IDSM IAR 66 200 25 20 30 135 75 37 5 3 -55 to 175 Symbol RJA RJC Typ 19 45 1.5 Max 25 55 2
TC=100C TA=25C TA=70C
A A mJ W W C Units C/W C/W C/W
Repetitive avalanche energy L=0.3mH EAR TC=25C PD Power Dissipation B TC=100C TA=25C PDSM A Power Dissipation TA=70C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Case
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=20V, V GS=0V TJ=55C VDS=0V, VGS= 30V VDS=VGS ID=250A VGS=12V, V DS=5V VGS=20V, ID=20A VGS=12V, ID=20A VGS=10V, ID=20A TJ=125C gFS VSD IS Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current 2 200 3 2.7 3.5 4 5.6 75 0.7 Min 25 0.005 1 5 100 4 3.2 4 5.2 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
1 55 2400
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz
2100 850 400 0.35 40 33 11 14 12 19 15 8.5 42 34
1 50
VGS=10V, V DS=12.5V, ID=20A
VGS=10V, V DS=12.5V, R L=0.68, RGEN=3 IF=20A, dI/dt=100A/s IF=20A, dI/dt=100A/s
A: The value of RJA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case R and case to ambient. JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev0. July 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200 20V 160 12V 10V ID(A) VGS=8V 80 80 100 VDS=5V
120
60
ID(A)
40
125C
40
20
25C
0 0 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 1 5
0 3 5 6 7 VGS(Volts) Figure 2: Transfer Characteristics 4 8
4.5 4.0 RDS(ON) (m) 3.5 3.0 2.5 2.0 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 ID=20A 12 10 RDS(ON) (m) 8 6 4 2 6 8 10 12 14 16 18 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VGS=12V Normalized On-Resistance VGS=10V
1.4 ID=20A 1.2 VGS=10V 1 VGS=12V VGS=20V VGS=12V VGS=10V
VGS=20V
0.8 VGS=20V 0.6 -50 -25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.0E+01 125C 1.0E+00
TC=100C TA=25C 125C
25C
IS (A)
1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 0.2 0.4 1.2 25C
-55 to 175
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20 16 VGS (Volts) 12 8 4 0 0 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 3000 VDS=12.5V ID=20A Capacitance (pF) Ciss 2500 2000 1500 1000 Crss 500 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30
Coss
1000.0 200 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 TJ(Max)=175C TC=25C RDS(ON) limited 10s 100 DC Power (W) TJ(Max)=175C TC=25C
150
100
50
0.1
1 VDS (Volts)
10
100
0 0.0001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0.001
10 ZJC Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=Tc+PDM.ZJC.RJC RJC=2C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100C TA=25C
0.1 PD
-55 to 175
Ton Single Pulse T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current TA=25C Power Dissipation (W) 0.001 80 60 40 150C 20 0 0.00001 25C 80 70 60 50 40 30 20 10 0 0.0001 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note B)
Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability
100 80 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B)
100 80 Power (W) 60 40 20 0 0.01
Current rating ID(A)
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 ZJA Normalized Transient Thermal Resistance
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 PD 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=55C/W 0.01 0.1 1 Ton
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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