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| AP4501SSD Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching D1 D1 D2 D2 N with Schottky AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 30V 36m 5.3A -30V 60m -4.2A K PDIP-8 G1 S1/A S2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the design with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. AP4501SSD included N , P channel enhancement mode power MOSFET and Shottky diode. G1 D2 G2 S1 A S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 20 5.3 4.3 40 2 0.016 -55 to 150 -55 to 125 P-channel -30 20 -4.2 -3.5 -30 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit /W Data and specifications subject to change without notice 200221031 AP4501SSD N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage 2 Test Conditions VGS=0V, ID=250uA Min. 30 1 - Typ. 0.031 Max. Units 36 55 3 100 1 100 V V/ m m V S uA mA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=5.3A VGS=4.5V, ID=4A 10 8.2 2.3 4.8 6 5.2 18.8 4.4 645 150 95 VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC)4 Drain-Source Leakage Current (Tj=70 C) o VDS=VGS, ID=250uA VDS=10V, ID=5.3A VDS=30V, VGS=0V VDS=24V, VGS=0V VGS=20V ID=5.3A VDS=24V VGS=4.5V VDS=15V ID=1A RG=3.3,VGS=10V RD=15 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Source Current ( Body Diode ) 2 Test Conditions VD=VG=0V , VS=1.2V IS=1.7A, VGS=0V Min. - Typ. - Max. Units 1.7 1.2 A V Forward On Voltage 2 Schottky Characteristics@Tj=25 Symbol VF Irm Parameter Forward Voltage Drop Maximum Reverse Leakage Current Test Conditions IF=1A Vr=30V Min. - Typ. - Max. Units 0.5 100 V uA AP4501SSD P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current ( T=25 C) j Drain-Source Leakage Current ( T=70 C) j o o Test Conditions VGS=0V, ID=-250uA 2 Min. -30 -1 - Typ. -0.03 Max. Units 60 80 -3 -1 -25 100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VGS=-10V, ID=-4.2A VGS=-4.5V, ID=-3A VDS=VGS, ID=-250uA VDS=-10V, ID=-4.2A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-4.2A VDS=-15V VGS=-4.5V VDS=-15V ID=-1A RG=6,VGS=-10V RD=15 VGS=0V VDS=-25V f=1.0MHz 7.2 9 3.5 2 12 20 45 27 760 330 90 Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol IS VSD Parameter Source Current ( Body Diode ) 2 Test Conditions VD=VG=0V , VS=-1.2V IS=-1.7A, VGS=0V Min. - Typ. - Max. Units -1.7 -1.2 A V Forward On Voltage 2 Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad. 4.IDSS is the leakage current measurement combined with Schottky diode. AP4501SSD N-Channel 40 36 T A =25 o C 30 ID , Drain Current (A) ID , Drain Current (A) 10V 8.0V 6.0V 5.0V T A =150 o C 10V 8.0V 6.0V 5.0V 24 20 12 10 V GS =4. 0 V V GS =4.0V 0 0 1 2 3 4 0 0 2 3 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2 I D =5.3A T A =25 70 I D= 5 . 3 A V GS = 10V Normalized RDS(ON) 1.4 RDS(ON) (m ) 40 0.8 10 2 5 8 11 0.2 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100 2.5 10 2 VGS(th) (V) T A =150 o C IS(A) 1 T A =25 C o 1.5 1 0.1 0.5 0.01 0 0.4 0.8 1.2 0 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4501SSD N-Channel f=1.0MHz 12 10000 I D =5.3A VGS , Gate to Source Voltage (V) 9 V V V DS =16V DS =20V DS =24V 1000 Ciss C (pF) 6 100 Coss Crss 3 0 0 4 8 12 16 10 1 7 13 19 25 31 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor = 0.5 0.2 Normalized Thermal Response (Rthja) 100us 10 0.1 1ms ID (A) 10ms 1 0.1 0.05 0.02 100ms 1s 10s DC 0.01 PDM 0.01 Single Pulse t T Duty Factor = t/T Peak Tj = PDM x Rthja + Ta Rthja =90 C/W o 0.1 T A =25 C Single Pulse 0.01 0.1 1 10 o 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 100 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS D TO THE OSCILLOSCOPE D VDS TO THE OSCILLOSCOPE 0.5 x RATED V DS 0.8 x RATED V DS G S VGS RG + 10V - G S VGS + 1~ 3 mA I G I D Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit AP4501SSD P-Channel 40 36 T A =25 C 30 o -10V -8.0V -ID , Drain Current (A) -6.0V T A =150 o C -10V -8.0V -6.0V -ID , Drain Current (A) 24 20 -5.0V -5.0V 12 10 V GS = - 4. 0 V V GS = - 4. 0 V 0 0 1 2 3 4 0 0 1 2 3 4 5 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 120 1.8 I D =-4.2A T A =25 1.6 I D =-4.2A V GS = -10V 90 Normalized RDS(ON) 3 5 7 9 11 1.4 RDS(ON) (m ) 1.2 60 1 0.8 30 0.6 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 100 2.5 10 2 -IS(A) 1 T A =150 o C T A =25 o C -VGS(th) (V) 1.5 1 0.1 0.5 0.01 0.1 0.4 0.7 1 1.3 0 -50 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C ) 0 50 100 150 Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4501SSD P-Channel 14 10000 f=1.0MHz -VGS , Gate to Source Voltage (V) 12 I D =-4.2A V DS =-10V V DS =-15V V DS =-20V 1000 10 C (pF) 8 Ciss Coss 100 6 4 Crss 2 0 0 5 10 15 20 25 30 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty Factor = 0.5 0.2 100us 10 Normalized Thermal Response (Rthja) 0.1 1ms -ID (A) 1 0.1 0.05 10ms 100ms 0.02 0.01 PDM 0.01 Single Pulse t T Duty Factor = t/T Peak Tj = PDM x Rthja + T a Rthja=90 oC/W 0.1 T A =25 o C Single Pulse 0.01 0.1 1s 10s DC 0.001 -V DS , Drain-to-Source Voltage (V) 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance RD VDS TO THE D D VDS TO THE OSCILLOSCOPE 0.5 x RATED VDS OSCILLOSCOPE 0.5 x RATED VDS G S VGS RG G S -10 V VGS -1~-3mA I G I D Fig 11. Switching Time Circuit Fig 12. Gate Charge Circuit |
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