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| APT33GF120HR 1200V 38A Fast IGBT The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. TO-258 * Low Forward Voltage Drop * Low Tail Current * Avalanche Rated * Hermetic Package MAXIMUM RATINGS Symbol V CES VCGR VGE I C1 I C2 I CM I LM EAS PD TJ,TSTG TL Parameter Collector-Emitter Voltage * High Freq. Switching to 20KHz * Ultra Low Leakage Current * RBSOA and SCSOA Rated C E G C G E All Ratings: TC = 25C unless otherwise specified. APT33GF120HR UNIT Collector-Gate Voltage (RGE = 20KW) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dissipation 2 Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. Y R A IN IM L E R P 1200 1200 20 38 33 76 66 65 @ TC = 25C Volts Amps mJ Watts C 205 -55 to 150 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.8mA) Gate Threshold Voltage (VCE = VGE, I C = 700A, Tj = 25C) MIN TYP MAX UNIT 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 0.8 5.0 6-2000 050-5974 Rev - Volts Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = I C2, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES mA nA 100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA EUROPE 405 S.W. Columbia Street Chemin de Magret Bend, Oregon 97702 -1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 APT33GF120HR Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES I C = I C2 Resistive Switching (25C) VGE = 15V VCC = 0.8VCES I C = I C2 RG = 10W MIN TYP MAX UNIT 1850 200 110 165 20 100 30 140 150 200 28 60 ns nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Y R A IN IM L E R P Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W ns 280 30 3.0 3.0 6.0 28 70 TJ = +150C mJ Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10W ns 250 25 Total Switching Losses Forward Transconductance TJ = +25C VCE = 20V, I C = I C2 5.0 8.5 20 mJ S THERMAL CHARACTERISTICS Symbol RQJC RQJA Characteristic Junction to Case Junction to Ambient MIN TYP MAX UNIT C/W 0.61 40 1 2 6-2000 Repetitive Rating: Pulse width limited by maximum junction temperature. IC = IC2, RGE = 25W, L = 119H, Tj = 25C See MIL-STD-750 Method 3471 APT Reserves the right to change, without notice, the specifications and information contained herein. 3 050-5974 Rev - |
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