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| MMBD7000 Discrete POWER & Signal Technologies MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 1 2 SOT-23 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol W IV IO IF if if(surge) Working Inverse Voltage Average Rectified Current DC Forward Current Recurrent Peak Forward Current TA = 25C unless otherwise noted Parameter Value 70 200 600 700 1.0 2.0 -55 to +150 150 Units V mA mA mA A A C C Tstg TJ Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range Operating Junction Temperature *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max MMBD7000* 350 2.8 357 Units mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (c)1997 Fairchild Semiconductor Corporation MMBD7000 High Conductance Ultra Fast Diode (continued) Electrical Characteristics Symbol BV IR TA = 25C unless otherwise noted Parameter Breakdown Voltage Reverse Current Test Conditions I R = 100 A VR = 100 V VR = 50 V VR = 50 V, TA = 125C I F = 1.0 mA I F = 10 mA I F = 50 mA I F = 150 mA VR = 0, f = 1.0 MHz I F = 10 mA, IRR = 1.0 mA, RL = 100 Min 100 Max 500 300 100 700 820 1.1 1.25 1.5 4.0 Units V nA nA A mV mV V V pF nS VF Forward Voltage 550 670 0.75 CO TRR Diode Capacitance Reverse Recovery Time |
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