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| 2N5087 Preferred Device Amplifier Transistor PNP Silicon Features * Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 -55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C W mW/C C TO-92 CASE 29 STYLE 1 2 BASE 1 EMITTER 3 STRAIGHT LEAD BULK PACK 12 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W 2N 5087 AYWW G G 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N5087 2N5087G 2N5087RLRAG Package TO-92 TO-92 (Pb-Free) TO-92 (Pb-Free) Shipping 5000 Units / Bulk 5000 Units / Bulk 2000/T ape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 Preferred devices are recommended choices for future use and best overall value. 1 March, 2007 - Rev. 4 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1) (IC = 10 mAdc, IB = 1.0 mAdc) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) NF - - 2.0 2.0 hfe 250 900 dB (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) fT 40 Ccb - 4.0 - - pF MHz VBE(on) - 0.85 hFE 250 250 250 VCE(sat) - 0.3 Vdc 800 - - Vdc - IEBO - 50 (IC = 100 mAdc, IE = 0) V(BR)CBO 50 ICBO - 50 nAdc - nAdc V(BR)CEO 50 - Vdc Vdc Symbol Min Max Unit Collector-Emitter Saturation Voltage 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = -5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 mA 30 mA 3.0 2.0 1.0 mA 100 mA 300 mA BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 mA 100 mA 30 mA 10 mA IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 1. Noise Voltage 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 Figure 2. Noise Current RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0 k Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 Hz to 15.7 kHz Noise Figure is Defined as: en2 ) 4KTRS ) In 2RS2 1 2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) NF + 20 log10 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 10 20 30 50 70 100 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 2N5087 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE , DC CURRENT GAIN 200 -55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100 TA = 25C PULSE WIDTH = 300 ms 80 DUTY CYCLE 2.0% 300 mA 60 IB = 400 mA 350 mA 250 mA 200 mA 150 mA 0.6 0.4 40 20 0 100 mA 50 mA 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 TJ = 25C V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 qVB for VBE 0.2 - 55C to 25C 50 100 25C to 125C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 0 0.1 VBE(on) @ VCE = 1.0 V VCE(sat) @ IC/IB = 10 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 9. "On" Voltages Figure 10. Temperature Coefficients http://onsemi.com 4 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 t, TIME (ns) 100 70 50 30 20 10 7.0 5.0 1.0 td @ VBE(off) = 0.5 V tr VCC = 3.0 V IC/IB = 10 TJ = 25C 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C tf 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 11. Turn-On Time BANDWIDTH PRODUCT (MHz) Figure 12. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 7.0 Cib 5.0 TJ = 25C 3.0 2.0 Cob f T, CURRENT-GAIN 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 hie , INPUT IMPEDANCE (k ) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 hoe , OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 VCE = 10 Vdc f = 1.0 kHz TA = 25C 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 15. Input Impedance Figure 16. Output Admittance http://onsemi.com 5 2N5087 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 D = 0.5 0.2 0.1 0.05 0.02 0.01 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 P(pk) t1 t2 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 5.0 k 10 k 20 k 50 k 100 k 0.01 0.01 0.02 500 1.0 k 2.0 k Figure 17. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C 1.0 ms 100 ms dc TA = 25C dc 10 ms 1.0 s TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. DESIGN NOTE: USE OF THERMAL RESPONSE DATA Figure 18. Active-Region Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 - 40 - 20 ICEO ICBO AND ICEX @ VBE(off) = 3.0 V 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. Figure 19. Typical Collector Leakage Current http://onsemi.com 6 2N5087 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X-X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X-X N 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 7 2N5087/D |
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