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| BUX82 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) 22.23 (0.875) max. Applications The BUX82 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching-control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits.Other recommended applications include DC-RF amplifiers and power oscillators. TO-204AA (TO-3) PIN 1 -- Base PIN 2 -- Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tj = 25C unless otherwise stated) VCESM VCER VCEO IC ICM IB Ptot TSTG TJ Collector - Emitter Voltage Collector - Emitter Voltage Collector - Emitter Voltage(open base) Collector Current (d.c) Peak Collector Current Base Current (d.c) Total Power Dissipation Tmb = 50C Storage Temperature Range Maximum Junction Temperature tp = 2ms VBE = 0 RBE = 100W 800V 500V 400V 6A 8A 2A 60W -65 to +150C +150C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim.9/99 BUX82 ELECTRICAL CHARACTERISTICS (Tj = 25C unless otherwise stated) Parameter VCEOsust VCERsust VCE(sat) VBE(sat)* Collector - Emitter Sustaining Voltage Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage VCE(sat) VBE(sat)* IEBO ICES hFE fT ton ts tf Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Emitter Cut-off Current Collector Cut-off Current DC Current Gain Transition Frequency Turn-On Time Storage Time Fall Time IC = 0 VCESMmax IC = 0.6A IC = 0.2A IC ON = 2.5A IB1 = 0.5A VEB = 10V VBE = 0 VCE = 5V VCE = 10V VCC = 250V IB2 = 1A 30 6 0.3 2 0.5 3.5 0.3 IC = 4A IB = 1.25A 1.6 10 1 mA mA -- MHz IC = 2.5A IB = 0.5A 1.4 V 3 L = 25mH IC = 100mA L = 15mH RBE = 100W Test Conditions IC = 100mA IB = 0 Min. 400 500 Typ. Max. Unit V V 1.5 ms THERMAL CHARACTERISTICS Rth j-mb Thermal Resistance Junction to Case 1.65 C/W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/94 |
Price & Availability of BUX82
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