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| FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Product Features * 50 - 4000 MHz * Up to +31 dBm P1dB * Up to +45 dBm Output IP3 * High Drain Efficiency * 19 dB Gain @ 900 MHz * MTBF >100 Years * SOT-89 SMT Package Product Description The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +45 dBm output IP3 performance and an output power of +31 dBm at 1-dB compression. The device conforms to WJ Communications' long history of producing high reliability and quality components. The FP2189 has an associated MTBF of greater than 100 years at a mounting temperature of 85C. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required. Functional Diagram 4 1 2 3 Pin No. 1 2 3 4 Function Input Ground Output/Bias Ground Specifications DC Electrical Parameter Saturated Drain Current , Idss Transconductance, Gm Pinch Off Voltage2, Vp 1 Typical Parameters5 Units mA mS V Min Typ 500 350 -2.0 Max Parameter Frequency S21 S11 S22 Output P1dB Output IP3 Noise Figure Vdd Idq6 Idd at P1dB 5. 6. Units MHz dB dB dB dBm dBm dB V mA mA 915 19.1 -17 -10 +30.3 +44.3 4.2 +8 250 260 Typical 1960 15.2 -16 -8 +30.8 +44.2 3.5 +8 250 330 2140 13.8 -23 -9 +31.4 +45.5 4.5 +8 250 320 Parameters3 Frequency Range Small Signal Gain, Gss Output P1dB Output IP34 Thermal Resistance Units MHz dB dBm dBm C/W Min 50 Typ 15 +31 +45 Max 4000 30 1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 0.4 mA. 3. Test conditions unless otherwise noted: T = 25C, VDS = 8 V, IDQ = 250 mA, frequency = 900 MHz in an application circuit with ZL = ZLOPT, ZS = ZSOPT . 4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. Typical parameters represent performance in an application circuit. Idq is the quiescent drain current at small signal output levels. The current may increase as the output power is increased near its compression point. Absolute Maximum Ratings Parameters Operating Case Temperature Storage Temperature Maximum DC Power RF Input Power (continuous) Ordering Information Part No. FP2189 FP2189-PCB900S FP2189-PCB1900S FP2189-PCB2140S Rating -40 to +85 C -40 to +125 C 4.0 W +20 dBm Description 1-Watt HFET (Available in Tape & Reel) Operation of this device above any of there parameters may cause permanent damage 900 MHz Application Circuit 1900 MHz Application Circuit 2140 MHz Application Circuit This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Typical Performance Data S-Parameters (Vds = 8 V, Ids = 250 mA, 25C, Unmatched 50 ohm system) Gain, Maximum Stable Gain vs Frequency Gmsg S21 S11 vs Frequency S22 vs Frequency 5 GHz 4 GHz 6 GHz 6 GHz 5 GHz 3 GHz 4 GHz 3 GHz 2 GHz 2 GHz 1 GHz 1 GHz Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters that are shown are the de-embedded data down to the device leads and represents typical performance of the device. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Application Circuit: 870 - 960 MHz Typical Specifications Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Vdd Idq1 1 S-Parameters vs Frequency 10 S21 20 870 19.1 -12 -9 +30.4 +44.4 4.2 915 19.1 -17 -10 +30.3 +44.3 4.2 +8V 250 mA 960 19.1 -25 -12 +30.2 +44.3 4.2 S11, S22, S12 (dB) 0 S22 -10 -20 -30 800 S11 18 16 14 12 1000 S21 (dB) RF OUT Z6 Z7 C5 3 pF C9 100 pF Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 0603 Idq is the quiescent current at small signal output levels. The current typically increases up to 260 mA at the 1-dB compression point. 850 900 Frequency (MHz) 950 -Vgg C4 1000 pF C3 100 pF R1 100 Vdd + 8 V @ 250 mA C12 0.1 F C8 1000 pF C7 100 pF RF IN C1 100 pF Z1 C14 4.7 pF L4 5.6 nH Z2 L1 18 nH R2 10 Z4 FP2189 Sot-89 PIN 1 PIN 3 Z5 L2 5.6 nH L3 82 nH Z3 PIN 2,4 Length on .014" Electrical length @ GETEKTM (mil) 900 MHz (deg) Z1 30 1.45 Z2 30 1.45 Z3 135 6.5 Z4 50 2.4 Z5 50 2.4 Z6 42 2.0 Z7 65 3.1 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 . Ref. Designator Value C1, C3, C7, C9 100 pF C4, C8 1000 pF C5 3 pF C11 0.1 F C14 4.7 pF R1 100 R2 10 L1 18 nH L2, L4 5.6 nH L3 82 nH All other parts are No Loads. Total unique parts count: 10 Part style 5% 50V, NPO/COG 5%, 50V, NPO/COG AVX 06031J3R0BAWTR 10%, 50V, X7R AVX 06035J4R7APWTR 1/16 W, 5% 1/16 W, 5% TOKO LL1608-FH18NJ TOKO LL1608-FH5N6S TOKO LL1608-FH82NJ Ref. Designator 14 mil GETEKTM ML200DSS (r = 4.2) The layout of this circuit can be downloaded from the website. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Application Circuit: 1930 - 1990 MHz Typical Specifications Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Vdd Idq1 1 S-Parameters vs Frequency 10 16 S21 S11, S22, S12 (dB) 0 S22 14 S21 (dB) Size 0603 0603 0603 0603 1206 0603 0603 0603 0603 1930 15.3 -14 -8 +30.8 +44 3.6 1960 15.2 -16 -8 +30.8 +44.2 3.5 +8V 250 mA 1990 15.0 -19 -9 +30.7 +44.3 3.5 -10 12 -20 S11 -30 1800 10 Idq is the quiescent current at small signal output levels. The current typically increases up to 330 mA at the 1-dB compression point. 1850 1900 1950 2000 2050 8 2100 Frequency (MHz) -Vgg C4 1000 pF C3 33 pF R1 20 C2 2.4 pF C1 33 pF Z1 C13 2.4 pF L1 10 nH Vdd + 8 V @ 250 mA C8 0.1 F C6 33 pF C7 1000 pF RF IN R2 5.1 Z3 FP2189 Sot-89 PIN 1 PIN 3 Z4 L2 22 nH C9 33 pF RF OUT Z2 PIN 2,4 C5 1.5 pF Length on .014" Electrical length @ GETEKTM (mil) 1900 MHz (deg) Z1 30 3.1 Z2 145 14.8 Z3 50 5.1 Z4 255 26.1 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 . Ref. Designator Value C1, C3, C6, C9 33 pF C2, C13 2.4 pF C4, C7 1000 pF C5 1.5 pF C8 0.1 F R1 20 R2 5.1 L1 10 nH L2 22 nH All other parts are No Loads. Total unique parts count: 9 14 mil GETEKTM ML200DSS (r = 4.2) The layout of this circuit can be downloaded from the website. Part style 5% 50V, NPO/COG AVX 06035J2R4AAWTR 5% 50V, NPO/COG AVX 06035J1R5AAWTR 10%, 50V, X7R 1/16 W, 5% 1/16 W, 5% TOKO LL1608-FH10NJ TOKO LL1608-FH22NJ Ref. Designator This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Application Circuit: 2110 - 2170 MHz Typical Specifications Frequency S21 - Gain S11 - Input R.L. S22 - Output R.L. Output P1dB Output IP3 Noise Figure Vdd Idq1 1 S-Parameters vs Frequency 10 16 S21 S11, S22, S12 (dB) 0 S22 -10 12 14 S21 (dB) 2110 13.9 -27 -8 +31.4 +44.5 4.5 2140 13.8 -23 -9 +31.4 +45.5 4.5 +8V 250 mA 2170 13.7 -20 -10 +31.4 +43.2 4.5 -20 S11 10 Idq is the quiescent current at small signal output levels. The current typically increases up to 320 mA at the 1-dB compression point. -30 2000 2050 2100 2150 2200 2250 8 2300 Frequency (MHz) Vdd + 8 V @ 250 mA -Vgg C4 22 pF C8 0.1 F C6 1000 pF C7 22 pF R1 10 RF IN C1 1.8 pF Z1 L1 5.6 nH R2 5.1 Z3 C4 1.5 pF Z4 FP2189 Sot-89 PIN 1 PIN 3 Z5 L2 18 nH C9 22 pF RF OUT Z2 PIN 2,4 C5 1.2 pF Ref. Designator Length on .014" Electrical length @ GETEKTM (mil) 2140 MHz (deg) Z1 150 17.3 Z2 15 1.7 Z3 100 11.5 Z4 50 5.8 Z5 225 25.9 The lengths are measured from the component edge-to-edge. All microstrip lines have a line impedance of 50 . Ref. Designator Value Part style Size C1 1.8 pF AVX 06035J1R8AAWTR 0603 C3, C7, C9 22 pF 5% 50V, NPO/COG 0603 C4 1.5 pF AVX 06035J1R5AAWTR 0603 C5 1.2 pF AVX 06035J1R2AAWTR 0603 C6 1000 pF 5% 50V, NPO/COG 0603 C8 0.1 F 10%, 50V, X7R 1206 R1 10 1/16 W, 5% 0603 R2 6.2 1/16 W, 5% 0603 L1 18 nH TOKO LL1608-FH18NJ 0603 L2 5.6 nH TOKO LL1608-FH5N6S 0603 All other parts are No Loads. Total unique parts count: 10 C3 is of size 0805 on the app board so that it would fit in the 1206 pad. 14 mil GETEKTM ML200DSS (r = 4.2) The layout of this circuit can be downloaded from the website. This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 FP2189 1 Watt HFET The Communications Edge TM Preliminary Product Information Application Note Special attention should be taken to properly bias the FP2189. Power supply sequencing is required to prevent the device from operating at 100% Idss for a prolonged period of time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be "first on and last off." With a negative gate voltage present, the drain voltage can then be applied to the device. The gate voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional temperature-compensation active-bias circuit is recommended for use with the application circuit, which requires two standard voltage supplies +8V and -4V, and is set for an optimal drain bias of +8V @ 250 mA. The circuit schematic, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP2189 and also eliminates the effects of pinchoff variation. Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter-to-base junction of the PNP transistors. Thus the transistor emitter voltage adjusts the voltage incident at the gate of the FP2189 so that the device draws a constant current, regardless of the temperature. Two fixed voltage supplies are needed for operation. A Rohm dual transistor, UMT1N, and a dual-chip resistor (8.2 k) are recommended to minimize board space and help decrease the current variability through R4 with the components being matched to one another. The active-bias circuit can directly be attached to the voltage supply ports in the circuit diagram as shown above (Vdd and Vgg). Vdd = +8 V R3 220 4 2 R5 8.2 k 5 R4 1 1% 0805 1 UMT1N 3 R6 8.2 k 6 Vgg = -4 V Connected to Vgg on App Circuit Connected to Vdd on App Circuit Outline Drawing Land Pattern Mounting Configuration This document contains information on a new product. Specifications and information are subject to change without notice WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6620 * e-mail: sales@wj.com * Web site: www.wj.com May 2002 |
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