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Freescale Semiconductor Technical Data
Document Number: MRF7S18170H Rev. 0, 10/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.5 dB Drain Efficiency -- 31% Device Output Signal PAR -- 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 1840 MHz, 170 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 170 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S18170HR3 MRF7S18170HSR3
1805 - 1880 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF7S18170HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF7S18170HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 84C, 170 W CW Case Temperature 79C, 50 W CW Symbol RJC Value (2,3) 0.27 0.30 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S18170HR3 MRF7S18170HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class IA (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.72 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.87 703 -- -- pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 2 2.7 5.4 0.15 2.7 -- 7.6 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1807.5 MHz and f = 1877.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF MRF7S18170HR3 MRF7S18170HSR3 Adjacent Channel Power Ratio Input Return Loss Gps D PAR 5.8 5.7 ACPR IRL -- -- 6.2 6.2 - 37 - 15 -- -- - 35 -9 dBc dB 16 29 17.5 31 19 -- dB % dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S18170HR3 MRF7S18170HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 75 MHz Bandwidth @ Pout = 170 W CW Deviation from Linear Phase in 75 MHz Bandwidth @ Pout = 170 W CW Group Delay @ Pout = 170 W CW, f = 1840 MHz Part - to - Part Insertion Phase Variation @ Pout = 170 W CW, f = 1840 MHz Gain Variation over Temperature Output Power Variation over Temperature Symbol VBW -- 25 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1805 - 1880 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.4 2.5 4.2 15 0.015 0.01
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 3
R3 VBIAS
Z16 VSUPPLY + R2 C4 C3 C2 Z5 C10 Z7 Z8 Z9 Z10 Z11 Z12 C9 Z13 Z14 RF OUTPUT Z15 C17 C11 C12 C13
RF INPUT
R1 Z1 Z2 Z3 C1 C18 C19 C20 Z4 Z6
DUT C14 Z17 C8 C15
C5
C16
C6
C7
Z1 Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9
0.410 x 0.083 Microstrip 0.480 x 0.083 Microstrip 0.710 x 0.083 Microstrip 0.180 x 0.147 Microstrip 0.850 x 0.091 Microstrip 0.383 x 1.109 Microstrip 1.110 x 1.360 Microstrip 0.480 x 1.360 Microstrip 0.060 x 1.098 Microstrip
Z10* Z11* Z12 Z13 Z14* Z15* Z16, Z17 PCB
0.900 x 0.161 Microstrip 0.140 x 0.161 Microstrip 0.094 x 0.220 Microstrip 0.070 x 0.220 Microstrip 0.140 x 0.083 Microstrip 0.160 x 0.083 Microstrip 1.120 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 1. MRF7S18170HR3 Test Circuit Schematic -- NI - 880
Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values -- NI - 880
Part C1 C2, C8, C9 C3 C4 C5, C10 C6, C7, C11, C12 C13 C14 C15, C20 C16, C17 C18 C19 R1 R2, R3 Description 0.8 pF Chip Capacitor 6.8 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 5.6 pF Chip Capacitors 10 F Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 0.5 pF Chip Capacitor 0.2 pF Chip Capacitors 4.7 pF Chip Capacitors 2 pF Chip Capacitor 0.3 pF Chip Capacitor 10 W, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistors Part Number 100B0R8BW 100B6R8BW 100B101JW 100B104JW 100B5R6BW C5750X5R1H106MT 13661471 600B0R5BW 100B0R2BW 100B4R7BW 600B2R0BW 100B0R3BW 232272461009 232272461003 Manufacturer ATC ATC ATC ATC ATC TDK Philips ATC ATC ATC ATC ATC Phycomp Phycomp
MRF7S18170HR3 MRF7S18170HSR3 4 RF Device Data Freescale Semiconductor
R2 R3 C4 C3 C13
C2
C10
C17 C11 C12
R1 C1 CUT OUT AREA C9
C8 C14 C15
C18
C19
C20
C5
C16
C6
C7
MRF7S18170H Rev. 4
Figure 2. MRF7S18170HR3 Test Circuit Component Layout -- NI - 880
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 5
R3 VBIAS
Z16 VSUPPLY + R2 C4 C3 C2 Z5 C10 Z7 Z8 Z9 Z10 Z11 Z12 C9 Z13 Z14 RF OUTPUT Z15 C17 C11 C12 C13
RF INPUT
R1 Z1 Z2 Z3 C1 C18 C19 C20 Z4 Z6
DUT C14 Z17 C8 C15
C5
C16
C6
C7
Z1* Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9
0.500 x 0.083 Microstrip 0.290 x 0.083 Microstrip 0.810 x 0.083 Microstrip 0.180 x 0.147 Microstrip 0.850 x 0.091 Microstrip 0.383 x 1.109 Microstrip 1.110 x 1.360 Microstrip 0.480 x 1.360 Microstrip 0.060 x 1.098 Microstrip
Z10* Z11* Z12 Z13 Z14* Z15* Z16, Z17 PCB
0.900 x 0.161 Microstrip 0.140 x 0.161 Microstrip 0.094 x 0.220 Microstrip 0.070 x 0.220 Microstrip 0.140 x 0.083 Microstrip 0.160 x 0.083 Microstrip 1.120 x 0.080 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
* Variable for tuning
Figure 3. MRF7S18170HSR3 Test Circuit Schematic -- NI - 880S
Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values -- NI - 880S
Part C1 C2, C8, C9 C3 C4 C5, C10 C6, C7, C11, C12 C13 C14 C15 C16, C17 C18 C19 C20 R1 R2, R3 Description 0.8 pF Chip Capacitor 6.8 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 5.6 pF Chip Capacitors 10 F Chip Capacitors 470 F, 63 V Electrolytic Capacitor, Radial 0.5 pF Chip Capacitor 0.2 pF Chip Capacitor 4.7 pF Chip Capacitors 2 pF Chip Capacitor 0.3 pF Chip Capacitor 0.1 pF Chip Capacitor 10 W, 1/4 W Chip Resistor 10 kW, 1/4 W Chip Resistors Part Number 100B0R8BW 100B6R8BW 100B101JW 100B104JW 100B5R6BW C5750X5R1H106MT 13661471 600B0R5BW 100B0R2BW 100B4R7BW 600B2R0BW 100B0R3BW 100B0R2BW 232272461003 232272461009 Manufacturer ATC ATC ATC ATC ATC TDK Philips ATC ATC ATC ATC ATC ATC Phycomp Phycomp
MRF7S18170HR3 MRF7S18170HSR3 6 RF Device Data Freescale Semiconductor
R2 R3 C4 C3 C13
C2
C10
C17 C11 C12
R1 C1 CUT OUT AREA C9
C8 C14 C15
C18
C19 C20
C5
C16
C6
C7
MRF7S18170H Rev. 4
Figure 4. MRF7S18170HSR3 Test Circuit Component Layout -- NI - 880S
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) -5 PARC (dB) -8 -11 -14 -17 D, DRAIN EFFICIENCY (%) -5 PARC (dB) -8 -11 -14 -17 10 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB) 18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 IRL 10 1760 1780 1800 1820 1840 1860 1880 1900 1920 -3.1 1940 PARC D VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps 36 34 32 30 28 -1 -1.7 -2.4
f, FREQUENCY (MHz)
Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
18 17 Gps, POWER GAIN (dB) 16 15 14 13 12 11 IRL 10 1760 1780 1800 1820 1840 1860 1880 1900 -4.8 1920 1940 PARC D 3.84 MHz Channel Bandwidth PAR = 7.5 dB @ 0.01% Probability (CCDF) Gps VDD = 28 Vdc, Pout = 80 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA 46 44 42 40 38 -2.7 -3.4 -4.1
f, FREQUENCY (MHz)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 80 Watts Avg.
19 1750 mA 1400 mA 17 1050 mA 16 700 mA VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz Two-Tone Measurements, 10 MHz Tone Spacing 14 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2100 mA 18 Gps, POWER GAIN (dB) -10
-20 IDQ = 700 mA 1050 mA -40 1750 mA -50 1400 mA VDD = 28 Vdc, f1 = 1835 MHz, f2 = 1845 MHz Two-Tone Measurements, 10 MHz Tone Spacing 100 400 2100 mA
-30
15
-60 1 Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Two - Tone Power Gain versus Output Power
Figure 8. Third Order Intermodulation Distortion versus Output Power
MRF7S18170HR3 MRF7S18170HSR3 8 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 VDD = 28 Vdc, IDQ = 1400 mA f1 = 1835 MHz, f2 = 1845 MHz Two-Tone Measurements, 10 MHz Tone Spacing
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 1 IM7-U IM3-U IM3-L IM5-U IM5-L IM7-L 10 TWO-TONE SPACING (MHz) 100 VDD = 28 Vdc, Pout = 170 W (PEP) IDQ = 1400 mA, Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1840 MHz
-20
-30
-40 3rd Order -50 7th Order -60 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 5th Order
Figure 9. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -3 -3 dB = 84.995 W -4 -5 30 45 60 75 90 -1 dB = 47.811 W -2 dB = 64.519 W
Figure 10. Intermodulation Distortion Products versus Tone Spacing
50 Ideal D, DRAIN EFFICIENCY (%) 45 40 35 30 Actual VDD = 28 Vdc, IDQ = 1400 mA f = 1840 MHz, Input PAR = 7.5 dB 105 25 20 120
Pout, OUTPUT POWER (WATTS)
Figure 11. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc)
-20 -30
19 VDD = 28 Vdc, IDQ = 1400 mA, f = 1840 MHz Single-Carrier W-CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth 18 17 85_C 16 15 14 13 41 42 43 44 45 46 47 48 49 50 1 10 Pout, OUTPUT POWER (dBm) Gps TC = -30_C 25_C
Gps, POWER GAIN (dB)
60 -30_C 25_C 85_C 50 40 30 20 VDD = 28 Vdc IDQ = 1400 mA f = 1840 MHz 100 10 0 400 D, DRAIN EFFICIENCY (%)
-40
Uncorrected, Upper and Lower
-50 DPD Corrected, No Memory Correction
-60
DPD Corrected, with Memory Correction
D
-70 40
Pout, OUTPUT POWER (WATTS) CW
Figure 12. Digital Predistortion Correction versus ACPR and Output Power
Figure 13. Power Gain and Drain Efficiency versus CW Output Power MRF7S18170HR3 MRF7S18170HSR3
RF Device Data Freescale Semiconductor
9
TYPICAL CHARACTERISTICS
18 MTTF FACTOR (HOURS X AMPS2) IDQ = 1400 mA f = 1840 MHz Gps, POWER GAIN (dB) 17
109
108
16
107
15 VDD = 24 V 14 0 100 200 300 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V
106 90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 14. Power Gain versus Output Power
Figure 15. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10
-10 -20 -30
3.84 MHz Channel BW
PROBABILITY (%)
1 Output Signal 0.1 (dB) 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF Input Signal
-40 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW
Figure 16. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 17. Single - Carrier W - CDMA Spectrum
MRF7S18170HR3 MRF7S18170HSR3 10 RF Device Data Freescale Semiconductor
f = 1920 MHz Zload
Zo = 10
f = 1760 MHz
f = 1760 MHz Zsource f = 1920 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg. f MHz 1760 1780 1800 1820 1840 1860 1880 1900 1920 Zsource W 1.93 - j6.00 1.95 - j6.10 1.99 - j6.18 1.95 - j6.22 1.85 - j6.30 1.71 - j6.26 1.55 - j6.25 1.39 - j6.20 1.23 - j6.15 Zload W 1.13 - j2.65 1.05 - j2.45 0.97 - j2.29 0.90 - j2.12 0.85 - j2.00 0.81 - j1.84 0.75 - j1.70 0.70 - j1.54 0.67 - j1.38
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 18. Series Equivalent Source and Load Impedance
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 11
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 32 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource 3dB 1.23 - j7.91 Zload 0.88 - j2.81 P3dB Actual VDD = 28 Vdc, IDQ = 1400 mA Pulsed CW, 12 sec(on), 10% Duty Cycle, f = 1840 MHz P1dB = 52.8 dBm (190 W) P6dB = 54.1 dBm (257 W) P3dB = 53.8 dBm (240 W) Ideal Pout, OUTPUT POWER (dBm) 61 60 59 58 57 56 55 54 53 52 51 32 33 34 35 36 37 38 39 40 41 42 43 44 Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource 1.23 - j7.91 Zload 1.03 - j2.65 Actual VDD = 32 Vdc, IDQ = 1400 mA Pulsed CW, 12 sec(on), 10% Duty Cycle, f = 1840 MHz P6dB = 55 dBm (316.23 W) P3dB = 54.65 dBm (290 W) Ideal
P1dB = 54.05 dBm (254.1 W)
Figure 19. Pulsed CW Output Power versus Input Power
Figure 20. Pulsed CW Output Power versus Input Power
MRF7S18170HR3 MRF7S18170HSR3 12 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G 4
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B
M
M bbb ccc H
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF7S18170HR3
B
1
(FLANGE)
B
K D TA
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M
bbb
M
B
M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
M bbb ccc H C
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
F E A
(FLANGE)
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF7S18170HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor 13
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2006 Description
* Initial Release of Data Sheet
MRF7S18170HR3 MRF7S18170HSR3 14 RF Device Data Freescale Semiconductor
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MRF7S18170HR3 MRF7S18170HSR3
Document Number: RF Device DataMRF7S18170H Rev. 0, 10/2006 Freescale Semiconductor
15

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