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STC03DE170HV HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBTTM 1700 V - 3 A - 0.55 W Table 1: General Features VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.55 W IC 1.8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 kHz SQUARED RBSOA, UP TO 1700 V VERY LOW CISS DRIVEN BY RG = 4.7 W 23 4 APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE170HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE170HV is designed for use in aux flyback smps for any three phase application. 1 TO247-4L HV Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC03DE170HV Marking C03DE170HV Package TO247-4L HV Device Structure Packaging TUBE January 2005 Rev. 1 1/9 STC03DE170HV Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 oC Storage Temperature Max. Operating Junction Temperature Value 1700 30 9 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W C C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 1 Unit o C/W Table 5: Electrical Characteristics (Tcase = 25 oC unless otherwise specified) Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VCS(ON) Collector-Source ON Voltage hFE DC Current Gain VGS = 20 V VGS = 10 V IC = 1.8 A VGS = 10 V IC = 0.7 A IC = 1.8 A IC = 0.7 A IB = 0.36 A IB = 70 mA 3.5 6 1 1 5 10 1 0.8 1.5 2.2 750 12.5 1.2 1 3 V V V pF nC 500 1.5 1.3 nA V V VSB(OS) = 9 V 100 mA Test Conditions VCS(SS) = 1700 V VBS(OS) = 30 V Min. Typ. Max. 100 10 Unit mA mA VCS = 1 V VGS = 10 V VBS(ON) Base-Source ON Voltage VGS(th) Ciss Gate Threshold Voltage Input Capacitance VCS = 1 V VGS = 10 V VGS = 10 V IC = 1.8 A IB = 0.36 A VGS = 10 V IC = 0.7 A VBS = VGS VCS = 25 V VGS = VCB = 0 VCS = 15 V VCB = 0 VGS = 10 V RG = 47 W tp = 4 ms VClamp = 1200 V IC = 1.8 A IB = 0.36 A IB = 70 mA IB = 250 mA f = 1MHZ VGS = 10 V IC = 1.8 A QGS(tot) Gate-Source Charge INDUCTIVE LOAD ts tf Storage Time Fall Time 760 14 ns ns 2/9 STC03DE170HV Symbol ts tf VCSW Parameter INDUCTIVE LOAD Storage Time Fall Time VGS = 10 V RG = 47 W tp = 4 ms VClamp = 1200 V IC = 0.7 A IB = 70 mA 1500 690 32 ns ns V Test Conditions Min. Typ. Max. Unit Maximum Collector-Source RG = 47 W hFE = 5 A IC = 3 A Voltage Switched Without Snubber VCS(dyn) Collector-Source Dynamic VCC = VClamp = 400 V VGS = 10 V Voltage RG = 47 W IC = 0.5 A (500 ns) IB = 0.1 A IBpeak = 1 A tpeak = 500 ns VCS(dyn) Collector-Source Dynamic Voltage (1ms) VCC = VClamp = 400 V RG = 47 W IB = 0.1 A tpeak = 500 ns VGS = 10 V IC = 0.5 A IBpeak = 1 A 3.9 V 2.2 V 3/9 STC03DE170HV Figure 3: Safe Operating Area Figure 6: Output Characteristics Figure 4: Reverse Biased Safe Operating Area Figure 7: Gate Threshold Voltage vs Temperature Figure 5: DC Current Gain Figure 8: DC Current Gain 4/9 STC03DE170HV Figure 9: Collector-Source On Voltage Figure 12: Collector-Source On Voltage Figure 10: Base-Source On Voltage Figure 13: Base-Source On Voltage Figure 11: Inductive Load Switching Time Figure 14: Inductive Load Switching Time 5/9 STC03DE170HV Figure 15: Dynamic Collector-Emitter Saturation Voltage Figure 16: Inductive Load Enlargement FBSOA Circuit Table 6: Components, Values VB1 = 4.16 V D1 = BA157 R1 = 1 W R2 = 100 W R3 = VCC / I Cn Rg = 47 W C1 = 220 nF C2 70 pF C3 = 50 nF Vg = 10 V Pulse Time = 5 ms 6/9 STC03DE170HV TO247-4L HV MECHANICAL DATA DIM. A A1 A2 b b2 c D D1 E e e1 L L1 L2 L3 oP S MIN. 4.85 2.20 0.95 2.50 0.40 23.85 15.45 2.54 5.08 10.20 2.20 mm. TYP 2.50 1.27 1.10 MAX. 5.15 2.60 1.30 2.90 0.80 24.15 15.75 24 21.50 15.60 2.50 18.50 3 5.50 10.80 2.80 3.55 3.65 7734874 7/9 STC03DE170HV Table 7: Revision History Date 21-Jan-2005 Release 1 First Release. Change Designator 8/9 STC03DE170HV Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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