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| SUP40N10-35 New Product Vishay Siliconix N-Channel 105-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 105 FEATURES rDS(on) (W) ID (A) 37.5 36.0 0.035 @ VGS = 10 V 0.038 @ VGS = 6 V D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D Automotive - Motor Drives - 12-V Systems D Note Book PC adaptors TO-220AB D G GDS Top View Ordering Information: SUP40N10-35--E3 S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 105 "20 37.5 21.5 75 35 61 107b 3.75 -55 to 175 Unit V A mJ W _C Maximum Power Dissipationa Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mountc Junction-to-Ambient J ti t A bi t Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72797 S-40445--Rev. A, 15-Mar-04 www.vishay.com Free Air RthJA RthJC Symbol Limit 40 62.5 1.4 Unit _C/W C/W 1 SUP40N10-35 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 105 V, VGS = 0 V Zero Gate Voltage Drain Current g On-State Drain Currenta IDSS ID(on) VDS = 105 V, VGS = 0 V, TJ = 125_C VDS = 105 V, VGS = 0 V, TJ = 175_C VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 15 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 6 V, ID = 10 A VGS = 10 V, ID = 15 A, TJ = 125_C VGS = 10 V, ID = 15 A, TJ = 175_C Forward Transconductancea gfs VDS = 15 V, ID = 15 A 10 75 0.026 0.028 0.035 0.038 0.063 0.077 S W 105 2 4 "100 1 50 250 A m mA V nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 50 V, RL = 1.25 W ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W VDS = 50 V, VGS = 10 V, ID = 40 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 2400 270 90 35 11 9 1.7 11 12 30 12 20 20 45 20 ns W 60 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Characteristics (TC = Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr 25_C)b 37.5 75 IF = 30 A, VGS = 0 V 1.0 60 IF = 30 A, di/dt = 100 A/ms 5 0.15 1.5 100 8 0.4 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 SUP40N10-35 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 75 VGS = 10 thru 6 V 60 I D - Drain Current (A) I D - Drain Current (A) 60 75 Vishay Siliconix Transfer Characteristics 45 5V 45 30 30 TC = 125_C 15 25_C -55_C 0 15 4V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on) - On-Resistance ( W ) 80 g fs - Transconductance (S) 25_C 125_C 0.06 0.08 On-Resistance vs. Drain Current 60 0.04 VGS = 6 V 40 20 0.02 VGS = 10 V 0 0 15 30 45 60 75 0.00 0 15 30 45 60 75 ID - Drain Current (A) ID - Drain Current (A) 3000 Capacitance 20 VDS = 50 V ID = 40 A Gate Charge 2400 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) Ciss 16 1800 12 1200 8 600 Crss 4 Coss 0 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) Document Number: 72797 S-40445--Rev. A, 15-Mar-04 0 0 10 20 30 40 50 60 70 Qg - Total Gate Charge (nC) www.vishay.com 3 SUP40N10-35 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A I S - Source Current (A) 2.5 100 Source-Drain Diode Forward Voltage rDS(on) - On-Resiistance (Normalized) 2.0 1.5 10 TJ = 150_C TJ = 25_C 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) 1000 Avalanche Current vs. Time Drain-Source Breakdown Voltage vs. Junction Temperature 140 Drain-Source Breakdown Voltage (V) 135 130 125 120 115 110 105 -50 ID = 10 mA 100 I Dav (a) 10 IAV (A) @ TA = 25_C 1 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 tin (Sec) -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 SUP40N10-35 New Product THERMAL RATINGS Maximum Avalanche and Drain Current vs. Case Temperature 50 Vishay Siliconix 1000 Safe Operating Area Limited by rDS(on) 40 I D - Drain Current (A) I D - Drain Current (A) 100 10 ms 100 ms 30 10 1 ms 10 ms 1 TC = 25_C Single Pulse dc, 100 ms 20 10 0 0 25 50 75 100 125 150 175 TC - Ambient Temperature (_C) 0.1 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Case 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Document Number: 72797 S-40445--Rev. A, 15-Mar-04 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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